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公开(公告)号：US20080093676A1
公开(公告)日：2008-04-24
申请号：US11892940
申请日：2007-08-28
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28079 , H01L21/28052 , H01L21/28097 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L27/1203 , H01L29/4933 , H01L29/495 , H01L29/4975 , H01L29/7851
摘要： A semiconductor device having a field effect transistor (FET) with enhanced performance by reduction of electrical contact resistance of electrodes and resistance of the electrodes per se is disclosed. The FET includes an n-type FET having a channel region formed in a semiconductor substrate, a gate electrode insulatively overlying the channel region, and a pair of source and drain electrodes which are formed at both ends of the channel region. The source/drain electrodes are made of silicide of a first metal. An interface layer that contains a second metal is formed in the interface between the substrate and the first metal. The second metal is smaller in work function than silicide of the first metal, and the second metal silicide is less in work function than the first metal silicide. A fabrication method of the semiconductor device is also disclosed.
摘要翻译： 公开了具有通过降低电极的电接触电阻和电极本身的电阻而具有增强的性能的场效应晶体管（FET）的半导体器件。 FET包括具有形成在半导体衬底中的沟道区域，绝缘地覆盖沟道区域的栅极电极和形成在沟道区域两端的一对源极和漏极电极的n型FET。 源极/漏极由第一金属的硅化物制成。 在基板和第一金属之间的界面中形成包含第二金属的界面层。 第二金属的功函数比第一金属的硅化物小，第二金属硅化物的功函数小于第一金属硅化物。 还公开了半导体器件的制造方法。
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公开(公告)号：US20080001224A1
公开(公告)日：2008-01-03
申请号：US11812609
申请日：2007-06-20
申请人： Atsuhiro Kinoshita , Junji Koga
发明人： Atsuhiro Kinoshita , Junji Koga
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/6659 , H01L29/1045 , H01L29/1083 , H01L29/665 , H01L29/6653
摘要： A semiconductor device which can effectively suppress a short channel effect and junction leakage is provided. A semiconductor device includes a field effect transistor. The field effect transistor includes a first semiconductor region of a first conductivity type, a gate electrode formed on a gate insulating film, and source and drain electrodes. The field effect transistor also includes second semiconductor regions of a second conductivity type. The field effect transistor further includes third semiconductor regions of the second conductivity type having an impurity concentration higher than that of the second semiconductor region and formed between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions, and side wall insulating films formed on both the side surfaces of the gate electrode. The source electrode and the drain electrode are separated from the side wall insulating films.
摘要翻译： 提供了可以有效地抑制短通道效应和结漏电的半导体器件。 半导体器件包括场效应晶体管。 场效应晶体管包括第一导电类型的第一半导体区域，形成在栅极绝缘膜上的栅极电极以及源极和漏极电极。 场效应晶体管还包括第二导电类型的第二半导体区域。 场效应晶体管还包括具有比第二半导体区域的杂质浓度高的第二导电类型的第三半导体区域，并且形成在源电极和第一和第二半导体区域之间以及在漏电极和第一和第二半导体之间 区域和形成在栅电极的两个侧表面上的侧壁绝缘膜。 源电极和漏电极与侧壁绝缘膜分离。
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公开(公告)号：US20070228486A1
公开(公告)日：2007-10-04
申请号：US11761288
申请日：2007-06-11
IPC分类号： H01L29/768
CPC分类号： H01L29/4908 , H01L21/28052 , H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L21/82385 , H01L21/84 , H01L27/092 , H01L27/1203 , H01L29/4975 , H01L29/517 , H01L29/66643 , H01L29/785
摘要： A semiconductor device comprises n-type and p-type semiconductor devices formed on the substrate, the n-type device including an n-channel region formed on the substrate, n-type source and drain regions formed opposite to each other interposing the n-channel region therebetween, a first gate insulator formed on the n-channel region, and a first gate electrode formed on the first gate insulator and including a compound of a metal M and a first group-IV elements Si1-a Gea (0≦a≦1), the p-type device including a p-channel region formed on the substrate, p-type source and drain regions formed opposite to each other interposing the p-channel region therebetween, a second gate insulator formed on the p-channel region, and a second gate electrode formed on the second gate insulator, and including a compound of the metal M and a second group-IV element Si1-c Gec (0≦c≦1, a≠c).
摘要翻译： 半导体器件包括形成在衬底上的n型和p型半导体器件，n型器件包括形成在衬底上的n沟道区，n型源极和漏极区彼此相对形成， 沟道区域，形成在n沟道区上的第一栅极绝缘体和形成在第一栅极绝缘体上的第一栅电极，并且包括金属M和第一族IV元素Si 1-a的化合物， （0 <= a <= 1），p型器件包括形成在衬底上的p沟道区域，彼此相对形成的p型源极和漏极区域 在其间插入p沟道区域，形成在p沟道区域上的第二栅极绝缘体和形成在第二栅极绝缘体上的第二栅电极，并且包括金属M和第二IV族元素Si c）。
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公开(公告)号：US20070083342A1
公开(公告)日：2007-04-12
申请号：US11469706
申请日：2006-09-01
IPC分类号： G04F10/00
CPC分类号： G04F10/10
摘要： An electronic timer having a parallel unit, a current detecting unit, and a time measuring unit. The parallel unit is formed of a plurality of aging devices connected in parallel and configured to be turned on or off for a predetermined time after storing electric charges. Each aging device is a transistor which includes a floating gate. The current detecting unit detects a sum current flowing in the parallel unit when a voltage is applied between input and output terminals of the parallel unit. The time measuring unit measures a time required to resume the supplying of power after the interruption of power supplying, from the sum current detected by the current detecting unit.
摘要翻译： 具有并联单元，电流检测单元和时间测量单元的电子计时器。 并联单元由并联连接的多个老化装置形成，并且在存储电荷之后被配置为开启或关闭预定时间。 每个老化装置是包括浮动栅极的晶体管。 当在并行单元的输入和输出端之间施加电压时，电流检测单元检测在并联单元中流动的和电流。 所述时间测量单元根据由所述电流检测单元检测到的和电流来测量在供电中断之后恢复供电所需的时间。
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公开(公告)号：US20060214217A1
公开(公告)日：2006-09-28
申请号：US11224049
申请日：2005-09-13
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.
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公开(公告)号：US20050212055A1
公开(公告)日：2005-09-29
申请号：US11081348
申请日：2005-03-16
IPC分类号： H01L29/417 , H01L21/00 , H01L21/336 , H01L29/76 , H01L29/772 , H01L29/78 , H01L29/786
CPC分类号： H01L29/785 , H01L29/66643 , H01L29/66795 , H01L29/7839 , H01L29/78621
摘要： An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.
摘要翻译： 场效应晶体管包括第一半导体区域，绝缘地设置在第一半导体区域上的栅极电极，夹在第一半导体区域之间的源极和漏极电极以及形成在第一半导体区域和源极之一之间的第二半导体区域 和漏电极，其杂质浓度高于第一半导体区域，源电极在源电极和漏电极相对于沟道方向彼此分离的方向上偏移到栅电极， 并且所述第二半导体区域中的一个具有不大于所述第二半导体区域中的所述第二半导体区域在所述沟道方向上完全耗尽的厚度的厚度与所述源极电极处于热平衡。
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公开(公告)号：US20050093033A1
公开(公告)日：2005-05-05
申请号：US10933333
申请日：2004-09-03
申请人： Atsuhiro Kinoshita , Junji Koga
发明人： Atsuhiro Kinoshita , Junji Koga
IPC分类号： H01L21/28 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/08 , H01L27/092 , H01L27/12 , H01L29/417 , H01L29/45 , H01L29/78 , H01L29/786 , H01L29/94
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/458 , H01L29/6653 , H01L29/6659 , H01L29/66643 , H01L29/66772 , H01L29/66795 , H01L29/7833 , H01L29/7839 , H01L29/78618 , H01L29/78645
摘要： A field effect transistor includes a first semiconductor region forming a channel region, a gate electrode insulatively disposed above the first semiconductor region, source and drain electrodes formed to sandwich the first semiconductor region in a channel lengthwise direction, and second semiconductor regions formed between the first semiconductor region and the source and drain electrodes and having impurity concentration higher than the first semiconductor region. The thickness of the second semiconductor region in the channel lengthwise direction is set to a value equal to or less than depletion layer width determined by the impurity concentration so that the second semiconductor region is depleted in a no-voltage application state.
摘要翻译： 场效应晶体管包括形成沟道区域的第一半导体区域，绝缘地设置在第一半导体区域上方的栅电极，形成为在沟道纵向方向夹着第一半导体区域的源电极和漏电极，以及形成在第一半导体区域之间的第二半导体区域 半导体区域和源极和漏极，并且具有高于第一半导体区域的杂质浓度。 通道长度方向上的第二半导体区域的厚度被设定为等于或小于由杂质浓度确定的耗尽层宽度的值，使得第二半导体区域在无电压施加状态下耗尽。
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公开(公告)号：US09361408B2
公开(公告)日：2016-06-07
申请号：US13569605
申请日：2012-08-08
CPC分类号： G06F17/30982 , G06F12/0246 , G06F17/30097 , G06F17/3012 , G06F2212/7201
摘要： According to one embodiment, a memory system including a key-value store containing key-value data as a pair of a key and a value corresponding to the key, includes an interface, a memory block, an address acquisition circuit and a controller. The interface receives a data write/read request or a request based on the key-value store. The memory block has a data area for storing data and a metadata table containing the key-value data. The address acquisition circuit acquires an address in response to input of the key. The controller executes the data write/read request for the memory block, and outputs the address acquired to the memory block and executes the request based on the key-value store. The controller outputs the value corresponding to the key via the interface.
摘要翻译： 根据一个实施例，包括密钥值存储的密钥值存储器的存储器系统包括密钥值数据作为一对密钥和对应于该密钥的值，包括接口，存储器块，地址获取电路和控制器。 接口接收数据写/读请求或基于键值存储的请求。 存储块具有用于存储数据的数据区域和包含键值数据的元数据表。 地址获取电路响应于键的输入而获取地址。 控制器执行存储器块的数据写/读请求，并将获取的地址输出到存储块，并根据键值存储执行请求。 控制器通过接口输出与该键对应的值。
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公开(公告)号：US09076722B2
公开(公告)日：2015-07-07
申请号：US13547567
申请日：2012-07-12
IPC分类号： H01L29/76 , H01L29/788 , H01L29/66 , H01L29/792 , H01L27/24 , H01L21/8234 , H01L27/115 , H01L27/22 , H01L21/84 , H01L27/12 , H01L27/06
CPC分类号： H01L45/1233 , H01L21/823431 , H01L21/845 , H01L27/0688 , H01L27/11519 , H01L27/11524 , H01L27/11551 , H01L27/11565 , H01L27/1157 , H01L27/11578 , H01L27/1211 , H01L27/222 , H01L27/2454 , H01L27/2481 , H01L29/7881 , H01L29/792 , H01L45/1206 , H01L45/1253
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures.
摘要翻译： 根据一个实施例，非易失性半导体存储器件包括鳍式堆叠层结构。 每个结构包括沿垂直方向堆叠的半导体层。 辅助栅电极沿面内方向设置，并在结构垂直方向的一个表面上划分。
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公开(公告)号：US08816448B2
公开(公告)日：2014-08-26
申请号：US12609805
申请日：2009-10-30
IPC分类号： H01L29/78
CPC分类号： H01L29/6659 , H01L21/265 , H01L21/28052 , H01L21/28518 , H01L21/28537 , H01L21/823814 , H01L21/823821 , H01L21/823842 , H01L27/095 , H01L29/66507 , H01L29/7833
摘要： A semiconductor device including a semiconductor substrate, an interface layer formed on the semiconductor substrate including at least 1×1020 atoms/cm3 of S (Sulfur), a metal-semiconductor compound layer formed on the interface layer, the metal-semiconductor compound layer including at least 1×1020 atoms/cm3 of S in the its whole depth, and a metal electrode formed on the metal-semiconductor compound layer.
摘要翻译： 一种半导体器件，包括半导体衬底，形成在所述半导体衬底上的界面层，所述界面层至少包含1×1020原子/ cm3的S（硫），在所述界面层上形成的金属 - 半导体化合物层，所述金属 - 半导体化合物层包括 在整个深度上至少为1×1020原子/ cm3的S，以及形成在金属 - 半导体化合物层上的金属电极。
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