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143 条记录 (耗时 0.024 秒)

    Method for Activating an Inner Surface of a Substrate Tube for the Manufacturing of an Optical-Fiber Preform
    32.
    发明申请
    Method for Activating an Inner Surface of a Substrate Tube for the Manufacturing of an Optical-Fiber Preform 有权
    用于激活用于制造光纤预制件的基板的内表面的方法

    公开(公告)号：US20170018406A1

    公开(公告)日：2017-01-19

    申请号：US15200403

    申请日：2016-07-01

    申请人： Draka Comteq B.V.

    发明人： Igor Milicevic ,  Gertjan Krabshuis ,  Mattheus Jacobus Nicolaas Van Stralen ,  Peter Gerharts ,  Johannes Antoon Hartsuiker

    IPC分类号： H01J37/32

    CPC分类号： H01J37/3244 ,  C03B37/01228 ,  C03B37/01861 ,  C03C15/00 ,  H01J37/32339 ,  H01J2237/334

    摘要： A method activates the inner surface of a substrate tube via plasma etching with a fluorine-containing etching gas. An exemplary method includes the steps of (i) supplying a supply flow of gas to the interior of a substrate tube, wherein the supply flow includes a main gas flow and a fluorine-containing etching gas flow, (ii) inducing a plasma via electromagnetic radiation to create a plasma zone within the substrate tube's interior, and (iii) longitudinally reciprocating the plasma zone over the length of the substrate tube between a reversal point near the supply side and a reversal point near the discharge side of the substrate tube. The flow of the fluorine-containing etching gas is typically provided when the plasma zone is near the supply side reversal point.

    摘要翻译： 一种方法通过使用含氟蚀刻气体的等离子体蚀刻来激活衬底管的内表面。 一种示例性方法包括以下步骤：（i）将气体供应流供应到衬底管的内部，其中所述供应流包括主气流和含氟蚀刻气流，（ii）通过电磁感应等离子体 辐射以在衬底管内部产生等离子体区域，以及（iii）在靠近供电侧的反转点与靠近衬底管的排出侧的反转点之间纵向往复移动衬底管的长度上的等离子体区。 当等离子体区域靠近供给侧反转点时，通常提供含氟蚀刻气体的流动。

    Open Plasma Lamp for Forming a Light-Sustained Plasma
    34.
    发明申请
    Open Plasma Lamp for Forming a Light-Sustained Plasma 有权

    公开(公告)号：US20160163516A1

    公开(公告)日：2016-06-09

    申请号：US15043804

    申请日：2016-02-15

    申请人： KLA-Tencor Corporation

    发明人： Lauren Wilson ,  Anant Chimmalgi ,  Ilya Bezel ,  Anatoly Shchemelinin ,  Matthew Derstine ,  Gildardo Delgado

    IPC分类号： H01J37/32 ,  H01J65/04

    CPC分类号： H01J37/32339 ,  H01J37/32449 ,  H01J65/04

    摘要： An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.

    SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD
    35.
    发明申请
    SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD 有权
    表面处理装置和表面处理方法

    公开(公告)号：US20150236359A1

    公开(公告)日：2015-08-20

    申请号：US14621612

    申请日：2015-02-13

    申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

    发明人： Takashi IKEJIRI

    IPC分类号： H01M8/02 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48

    CPC分类号： H01M8/0267 ,  C01B13/10 ,  C23C16/4412 ,  C23C16/4583 ,  C23C16/482 ,  H01J37/32339 ,  H01J37/32357 ,  H01L21/268 ,  H01L21/2683 ,  H01L21/2686 ,  H01L21/67115 ,  Y02P70/56

    摘要： The invention is equipped with a hydrophilic group generating gas supply portion, an installation stand, an irradiation device, and a flow generation portion. The hydrophilic group generating gas supply portion supplies a hydrophilic group generating gas into the treatment chamber. The installation stand is equipped with an installation plate and a support member. The installation plate has a ventilation portion, and the support member is provided protrusively from the installation plate, and supports the workpiece with an air gap left between the workpiece and the installation plate. The irradiation device irradiates the workpiece with an energy wave that induces activation of the hydrophilic group generating gas. The flow generation portion generates a flow of at least part of the activated hydrophilic group generating gas such that the hydrophilic group generating gas flows via the ventilation portion of the installation plate and flows around into the air gap.

    摘要翻译： 本发明配备有亲水组发生气体供给部，安装台，照射装置和流动产生部。 亲水性基团发生气体供给部将亲水性基团发生气体供给到处理室。 安装台配有安装板和支撑构件。 安装板具有通风部分，并且支撑构件从安装板突出地设置，并且在工件和安装板之间留有气隙的情况下支撑工件。 照射装置用引起亲水性基团发生气体的活化的能量波长照射工件。 流动产生部分产生至少部分活化的亲水基团产生气体的流动，使得亲水基团产生气体经由安装板的通风部分流动并流入气隙。

    Tunable uniformity in a plasma processing system
    37.
    发明授权
    Tunable uniformity in a plasma processing system 有权
    等离子体处理系统的可调均匀性

    公开(公告)号：US08635971B2

    公开(公告)日：2014-01-28

    申请号：US11393753

    申请日：2006-03-31

    申请人： Eric Hudson

    发明人： Eric Hudson

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05H1/00

    CPC分类号： H01J37/32082 ,  H01J37/32321 ,  H01J37/32339

    摘要： A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources. The source can be arranged to provide substantively uniform illumination, or can illuminate according to a non-uniform intensity distribution to compensate for existing non-uniformities in the plasma density or in the plasma process. Such sources can be embedded in the inner or outer electrode part of a multi-piece showerhead electrode assembly, or elsewhere in the chamber.

    摘要翻译： 提供了通过局部影响等离子体的密度来调整具有大鞘电位的等离子体的均匀性的方法。 该方法包括用来自源的电磁辐射来照射暴露于等离子体的物体，其中主体和源被协同地配置，使得当暴露于来自源的辐射时，主体将产生光电子。 这种电磁辐射的一个例子是真空紫外线，这样的一个实例是包围半导体衬底的边缘环。 从边缘环发射的光电子由等离子体捕获并以足够的能量加速到等离子体中以引起电离，局部地增加等离子体密度。 辐射源可以是多个离散源或一个或多个扩展源。 源可以被布置为提供实质上均匀的照明，或者可以根据不均匀的强度分布照亮以补偿等离子体密度或等离子体处理中现有的不均匀性。 这样的源可以嵌入在多件式喷头电极组件的内部或外部电极部分中，或者室内的其他地方。

    Method of processing wafers with resonant heating
    39.
    发明授权
    Method of processing wafers with resonant heating 失效
    用共振加热处理晶片的方法

    公开(公告)号：US07645356B2

    公开(公告)日：2010-01-12

    申请号：US10721657

    申请日：2003-11-25

    申请人： Siddhartha Panda ,  Richard S. Wise

    发明人： Siddhartha Panda ,  Richard S. Wise

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32339 ,  H01L21/3065 ,  H01L21/32136

    摘要： A method of etching a wafer using resonant infrared energy and a filter to control non-uniformities during plasma etch processing. The filter includes a predetermined array or stacked arrangement of variable transmission regions that mirror the spatial etch distortions caused by the plasma etching process. By spatially attenuating the levels of IR energy that reach the wafer, the filter improves uniformity in the etching process. Filters may be designed to compensate for edge fast etching due to macro-loading, asymmetric pumping in a plasma chamber, and magnetic field cusping.

    摘要翻译： 使用谐振红外能量蚀刻晶片的方法和用于在等离子体蚀刻处理期间控制不均匀性的滤光器。 滤波器包括可反映由等离子体蚀刻工艺引起的空间蚀刻失真的可变透射区域的预定阵列或堆叠布置。 通过空间衰减到达晶片的IR能量的水平，滤波器改善了蚀刻工艺中的均匀性。 滤波器可以被设计为补偿由于宏载荷，等离子体室中的不对称泵浦和磁场冲击造成的边缘快速蚀刻。

    PLASMA ETCHING METHOD AND APPARATUS THEREFOR
    40.
    发明申请
    PLASMA ETCHING METHOD AND APPARATUS THEREFOR 有权
    等离子体蚀刻方法及其设备

    公开(公告)号：US20090045167A1

    公开(公告)日：2009-02-19

    申请号：US12234417

    申请日：2008-09-19

    申请人： Koji Maruyama

    发明人： Koji Maruyama

    IPC分类号： B44C1/22

    CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/32339 ,  H01J37/32678

    摘要： A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of light absorption of a reaction product, e.g., SiF4, for which, to be more precise, ranges from 9 μm to 10 μm, the light is irradiated onto a surface of an object to be processed from the light source. The SiF4 molecules absorb the light, become activated and gain kinetic energy to be used in gaining an easy escape from a hole. As a consequence, an amount (a partial pressure) of fluorine radicals (F*) used as an etchant is increased and an etching rate of a silicon is increased.

    摘要翻译： 将诸如SF 6气体的含氟化合物气体转化为等离子体，并通过等离子体蚀刻被处理物体的硅部分。 同时，使用在反应产物（例如SiF 4）的光吸收波长范围内具有光的峰值强度的光源，其更精确地在9μm至10μm的范围内，光是 从光源照射到待处理物体的表面上。 SiF4分子吸收光，被激活并获得动能，以便从孔中轻松逃逸。 结果，用作蚀刻剂的氟自由基（F *）的量（分压）增加，并且硅的蚀刻速率增加。