公开(公告)号：US09881865B1

公开(公告)日：2018-01-30

申请号：US15221338

申请日：2016-07-27

申请人： Samsung Electronics Co., Ltd. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

发明人： Ki-Hyun Kim ,  Friedrich B. Prinz ,  Jinsung Kang ,  Youngdong Lee ,  John Provine ,  Peter Schindler ,  Stephen P. Walch ,  Yongmin Kim ,  Hyo Jin Kim

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L23/535 ,  H01L27/108 ,  H01L21/768

CPC分类号： H01L23/5225 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53257 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885

摘要： A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

公开(公告)号：US09564286B2

公开(公告)日：2017-02-07

申请号：US14459644

申请日：2014-08-14

申请人： Samsung Electronics Co., Ltd.

发明人： Sam Hyung Sam Kim ,  Andrei Teodor Iancu ,  Friedrich B. Prinz ,  Michael C. Langston ,  Peter Schindler ,  Ki-Hyun Kim ,  Stephen P. Walch ,  Takane Usui

IPC分类号： B05D3/06 ,  H01J37/00 ,  H01J37/32 ,  C23C16/455 ,  H01L21/768

CPC分类号： H01J37/00 ,  C23C16/45536 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32339 ,  H01J37/32357 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/76831 ,  H01L21/76898

摘要： Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

摘要翻译： 提供了形成半导体器件的薄膜的方法。 该方法包括通过将前体气体供应到室中在基板的表面上形成前体层，通过向室内供给吹扫气体将残留在室中的前体气体排出到室中，将反应气体供应到 该腔室基于反应气体产生等离子体，通过等离子体和前体层之间的化学反应形成薄膜，并将极紫外（EUV）光放射到室中，并通过以下步骤排出反应气体和留在腔室中的等离子体 将净化气体供应到室中。