公开(公告)号：US20170322490A1

公开(公告)日：2017-11-09

申请号：US15657295

申请日：2017-07-24

申请人： FUJIFILM Corporation

发明人： Naoya HATAKEYAMA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Keita KATO ,  Keiyu OU

IPC分类号： G03F7/075 ,  G03F7/004 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38 ,  G03F7/16

CPC分类号： G03F7/0758 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38

摘要： A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

公开(公告)号：US09778568B2

公开(公告)日：2017-10-03

申请号：US15147944

申请日：2016-05-06

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Kenji Funatsu ,  Akihiko Seki

IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322

摘要： A positive resist composition is provided comprising (A) a resin comprising recurring units having adamantane ring and recurring units having cyclopentyl so that the resin may increase its alkali solubility under the action of acid, (B) a mixture of sulfonium salts, and (C) a solvent. By coating the resist composition as a resist film, forming a protective film thereon, and effecting immersion lithography, a pattern of good profile is formed at a high resolution.

公开(公告)号：US09771346B2

公开(公告)日：2017-09-26

申请号：US14968172

申请日：2015-12-14

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Takayuki Miyagawa ,  Yukako Anryu ,  Koji Ichikawa

IPC分类号： C07D327/06 ,  C07D327/02 ,  C07D327/04 ,  C07D321/04 ,  C07D321/12 ,  C07D313/06 ,  C07D317/72 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/16 ,  C07C309/12 ,  C07C309/06

CPC分类号： C07D327/06 ,  C07C309/06 ,  C07C309/12 ,  C07C2603/74 ,  C07D313/06 ,  C07D317/72 ,  C07D321/04 ,  C07D321/12 ,  C07D327/02 ,  C07D327/04 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38

摘要： A salt represented by formula (I): wherein R1 and R2 independently represent a hydrogen atom, a hydroxy group or a C1 to C12 hydrocarbon group in which a methylene group may be replaced by a —O— or —CO—; m and n independently represent 1 or 2; Ar represents an optionally substituted phenyl group; Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group, A1 represents a single bond, a C1 to C24 alkanediyl group or the like, and Y represents an optionally substituted C1 to C18 alkyl group or monovalent C3 to C18 alicyclic hydrocarbon group, and a methylene group therein may be replaced by a —O—, O— or —SO2—, provided that the alkyl group or the alicyclic hydrocarbon group has at least one substituent, or at least one methylene group contained therein is replaced by a —O—, —CO— or —SO2—.

公开(公告)号：US20170255109A1

公开(公告)日：2017-09-07

申请号：US15601202

申请日：2017-05-22

申请人： NIKON CORPORATION

发明人： Makoto SHIBUTA

IPC分类号： G03F7/20

CPC分类号： G03F7/70341 ,  G03F7/2041 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70875 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875

摘要： An exposure apparatus exposes a substrate to light passing through liquid, and includes a stage that holds the substrate. The stage includes a substrate holder including a support member that supports a rear surface of the substrate and a first circumferential wall surrounding the support member. A second circumferential wall surrounds the substrate holder and forms a first groove between the second circumferential wall and the substrate holder, and a second groove on an outer side thereof. A plate member surrounds the substrate on the support member, and a recovery passage recovers liquid flowing from a liquid supply system to a gap between the plate member and the substrate. The second circumferential wall is under the gap so that part of an upper surface of the second circumferential wall faces the substrate rear surface and another part of the upper surface faces a rear surface of the plate member.

公开(公告)号：US20170235237A1

公开(公告)日：2017-08-17

申请号：US15585624

申请日：2017-05-03

申请人： NIKON CORPORATION

发明人： Andrew J. HAZELTON ,  Michael SOGARD

IPC分类号： G03F7/20

CPC分类号： G03F7/70875 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70775 ,  G03F7/70816 ,  G03F7/70866 ,  G03F7/709

摘要： A lithographic projection apparatus includes a projection system and a liquid confinement member extending along a boundary of a space under the projection system. The liquid confinement member has (i) a first opening facing downwardly via which a liquid is removed from a gap to be formed under the liquid confinement member, and (ii) a second opening facing downwardly via which fluid is removed from the gap to be formed under the liquid confinement member, the second opening being located radially outward of the first opening with respect to the space. The liquid in the space covers a portion of an upper surface of a substrate and the substrate is exposed through the liquid in the space.

公开(公告)号：US09720324B2

公开(公告)日：2017-08-01

申请号：US15210025

申请日：2016-07-14

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Jun Hatakeyama ,  Koji Hasegawa

IPC分类号： G03F7/004 ,  G03F7/30 ,  C08F18/20 ,  C08F220/28 ,  C08F220/60 ,  C08F224/00 ,  C08F226/02 ,  C08F228/02 ,  C08F228/06 ,  G03F7/039 ,  C08F222/40 ,  C08F222/20 ,  C08F216/14 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/0392 ,  C08F18/20 ,  C08F216/1416 ,  C08F220/18 ,  C08F220/28 ,  C08F220/60 ,  C08F222/20 ,  C08F222/40 ,  C08F224/00 ,  C08F226/02 ,  C08F226/06 ,  C08F228/02 ,  C08F228/06 ,  C08F2222/404 ,  C08F2222/408 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/085 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/2053 ,  G03F7/30 ,  G03F7/325 ,  C08F2220/283 ,  C08F2220/1891 ,  C08F2220/1866 ,  C08F220/20 ,  C08F2220/1841 ,  C08F220/24 ,  C09D133/10 ,  C08L33/16 ,  C09D139/04 ,  C09D143/02

摘要： A resist composition is provided comprising a polymer comprising recurring units (a) having an oxazolidinedione, thioxooxazolidinone, thiazolidinedione or thioxothiazolidinone structure and recurring unit (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.

公开(公告)号：US20170199459A1

公开(公告)日：2017-07-13

申请号：US15405612

申请日：2017-01-13

申请人： Samsung Electronics Co., Ltd. ,  Dongjin Semichem Co., Ltd.

发明人： Jin-A RYU ,  Jung-Youl LEE ,  Kyung-Lyul MOON ,  Yool KANG ,  Hyun-Jin KIM ,  Yu-Jin JEOUNG ,  Man-Ho HAN

IPC分类号： G03F7/11 ,  G03F7/20 ,  C08G18/02 ,  C09D175/00 ,  H01L21/306 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  H01L21/308 ,  G03F7/004 ,  G03F7/09

CPC分类号： G03F7/11 ,  C08G18/022 ,  C09D175/00 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0276 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L28/00

摘要： A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

公开(公告)号：US20170199457A1

公开(公告)日：2017-07-13

申请号：US15379123

申请日：2016-12-14

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Jun HATAKEYAMA ,  Daisuke KORI

IPC分类号： G03F7/09 ,  H01L21/02 ,  G03F7/004 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  H01L21/311 ,  G03F7/038

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/40 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

摘要： The present invention provides a method for forming a multi-layer film, including (i) forming an under layer film on a substrate by applying an under layer film material containing one or more species selected from resins having a repeating unit shown by the formula (1), resins having a repeating unit shown by the formula (2), and compounds shown by the formula (3), each containing a fluorene structure, and curing the same by heat treatment at 300° C. to 800° C. for 10 to 4,000 seconds; (ii) forming a titanium nitride film or a titanium oxynitride film on the under layer film; (iii) forming a hydrocarbon film on the titanium nitride film or the titanium oxynitride film; and (iv) forming a silicon oxide film on the hydrocarbon film. This can form a multi-layer film with reduced reflectance useful for a patterning process with high dimensional accuracy in dry etching.

公开(公告)号：US09696627B2

公开(公告)日：2017-07-04

申请号：US12966928

申请日：2010-12-13

申请人： Deyan Wang ,  Jinrong Liu ,  Cong Liu ,  Doris Kang ,  Anthony Zampini ,  Cheng-Bai Xu

发明人： Deyan Wang ,  Jinrong Liu ,  Cong Liu ,  Doris Kang ,  Anthony Zampini ,  Cheng-Bai Xu

IPC分类号： G03F7/20 ,  G03F7/32 ,  G03F7/039 ,  G03F7/004

CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/322

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

公开(公告)号：US09696622B2

公开(公告)日：2017-07-04

申请号：US13170007

申请日：2011-06-27

申请人： Deyan Wang

发明人： Deyan Wang

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/038 ,  G03F7/075 ,  G03F7/20

CPC分类号： G03F7/0392 ,  G03F7/0046 ,  G03F7/0047 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/2041

摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.