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    Binary and ternary crystal purification and growth method and apparatus
    31.
    发明授权
    Binary and ternary crystal purification and growth method and apparatus 失效
    二元和三元晶体纯化和生长方法和装置

    公开(公告)号：US06800137B2

    公开(公告)日：2004-10-05

    申请号：US10086624

    申请日：2002-03-04

    Applicant: Kiril A. Pandelisev

    Inventor： Kiril A. Pandelisev

    IPC: C30B904

    CPC classification number: C30B11/00 ,  C30B11/001 ,  C30B11/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B15/04 ,  C30B29/12 ,  C30B33/00 ,  Y10S117/914 ,  Y10T117/1048 ,  Y10T117/1088 ,  Y10T117/1092

    Abstract: Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

    Abstract translation: 活性气体通过晶体源材料或熔体释放，与杂质反应，并将杂质作为气体产物或沉淀物或轻质或重质形式离开。 气体产物通过真空除去，重质产物落入熔体的底部。 轻质产品上升到熔体的顶部。 纯化后，向熔体中加入掺杂剂。 熔体远离加热器移动并形成晶体。 随后的加热区重新熔化和细化晶体，并且在最终加热区中加入掺杂剂。 将晶体分开，并将晶体的分割部分重新加热用于热处理和退火。

    Continuous crystal plate growth process and apparatus
    32.
    发明授权
    Continuous crystal plate growth process and apparatus 失效
    连续晶体板生长工艺及装置

    公开(公告)号：US06743294B2

    公开(公告)日：2004-06-01

    申请号：US10011762

    申请日：2001-12-11

    Applicant: Kiril A. Pandelisev

    Inventor： Kiril A. Pandelisev

    IPC: C30B1104

    CPC classification number: C30B15/04 ,  C30B11/00 ,  C30B11/001 ,  C30B11/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B29/12 ,  Y10S117/914 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/102 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

    Abstract: Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

    Abstract translation: 活性气体通过晶体源材料或熔体释放，与杂质反应，并将杂质作为气体产物或沉淀物或轻质或重质形式离开。 气体产物通过真空除去，重质产物落入熔体的底部。 轻质产品上升到熔体的顶部。 纯化后，向熔体中加入掺杂剂。 熔体远离加热器移动并形成晶体。 随后的加热区重新熔化和细化晶体，并且在最终加热区中加入掺杂剂。 将晶体分开，并将晶体的分割部分重新加热用于热处理和退火。

    Process for preparing a silicon melt
    33.
    发明授权
    Process for preparing a silicon melt 失效

    公开(公告)号：US06652645B2

    公开(公告)日：2003-11-25

    申请号：US09943600

    申请日：2001-08-30

    Applicant: John Davis Holder

    Inventor： John Davis Holder

    IPC: C30B1514

    CPC classification number: C30B29/06 ,  C30B15/02 ,  Y10T117/1052 ,  Y10T117/1072

    Abstract: A process for controlling the amount of insoluble gas trapped by a silicon melt is disclosed. After a crucible is charged with polycrystalline silicon, a gas comprising at least about 10% of a gas having a high solubility in silicon is used as the purging gas for a period of time during melting. After the polycrystalline silicon charge has completely melted, the purge gas may be switched to a conventional argon purge. Utilizing a purge gas highly soluble in silicon for a period of time during the melting process reduces the amount of insoluble gases trapped in the charge and, hence, the amount of insoluble gases grown into the crystal that form defects on sliced wafers.

    Single crystal material auxiliary melting apparatus and single crystal material melting method
    36.
    发明授权
    Single crystal material auxiliary melting apparatus and single crystal material melting method 失效
    单晶材料辅助熔化装置和单晶材料熔化方法

    公开(公告)号：US06361597B1

    公开(公告)日：2002-03-26

    申请号：US09403621

    申请日：1999-11-05

    Applicant: Nobumitsu Takase ,  Tomohisa Machida ,  Yutaka Shiraishi

    Inventor： Nobumitsu Takase ,  Tomohisa Machida ,  Yutaka Shiraishi

    IPC: C30B1500

    CPC classification number: C30B15/02 ,  C30B15/14 ,  Y10T117/1056

    Abstract: The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material 30a is at low temperature and its conductivity is relatively low, a conductive carbon cylinder 2 is arranged at such a height as to cover the entire side wall of the auxiliary crucible 1, and when high frequency current is applied on a high frequency coil 3, secondary induction current is generated on the carbon cylinder 2. Then, Joule heat is generated on the carbon cylinder 2 by the secondary induction current, and heat of the carbon cylinder 2 is transmitted to the raw material inside via the auxiliary crucible 1. Thus, the raw material is heated, and melting is started. When the raw material is melted, an insulating ceramic base 4 is arranged at such a position as to cover the entire side wall of the auxiliary crucible 1. Because conductivity of the raw material is gradually increased, secondary induction current is generated in the melt 30b, and Joule heat is generated in the melt 30b itself by the secondary induction current.

    Abstract translation: 本发明旨在通过感应加热方法将辅助坩埚中的原料加热熔化时，提高热效率和减少熔化时间。 当初始原料30a处于低温并且其导电性相对较低时，导电碳筒2布置成覆盖辅助坩埚1的整个侧壁的高度，并且当高频电流施加在 高频线圈3，在碳筒2上产生二次感应电流。然后，通过二次感应电流在碳筒2上产生焦耳热，碳筒2的热量经由辅助电极向内部传递给原料 坩埚1.因此，原料被加热，开始熔化。 当原料熔化时，绝缘陶瓷基体4布置在覆盖辅助坩埚1的整个侧壁的位置。由于原料的导电性逐渐增加，因此在熔融物30b中产生二次感应电流 ，并且熔融物30b本身通过二次感应电流产生焦耳热。

    Charging material and holding system for the charging material
    37.
    发明申请
    Charging material and holding system for the charging material 失效
    充电材料的充电材料和保持系统

    公开(公告)号：US20010047748A1

    公开(公告)日：2001-12-06

    申请号：US09851229

    申请日：2001-05-08

    Applicant: WACKER-CHEMIE GmbH

    Inventor： Axel Frauenknecht ,  Matthaus Schantz ,  Viktor Beer

    IPC: C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

    CPC classification number: C30B15/02 ,  C30B13/08 ,  C30B13/285 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

    Abstract: A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.

    Abstract translation: 由半导体材料制成的充电材料用于在切克劳斯基坩埚拉拔过程中对熔化坩埚进行充电或再充电。 该充电材料具有一端具有凹槽的多晶硅半导体棒和一端具有舌状物的单晶半导体棒，这些棒通过榫槽连接而联接。 还有一种在切克劳斯基坩埚拉拔过程或浮区过程中保持多晶硅棒的保持系统，其在一端具有凹槽的多晶半导体棒之间具有榫槽连接， 单晶半导体棒，其一端具有舌头。

    Continuous crystal plate growth process and apparatus
    39.
    发明授权
    Continuous crystal plate growth process and apparatus 失效
    连续晶体板生长工艺及装置

    公开(公告)号：US6071339A

    公开(公告)日：2000-06-06

    申请号：US234411

    申请日：1999-01-21

    Applicant: Kiril A. Pandelisev

    Inventor： Kiril A. Pandelisev

    IPC: C30B11/00 ,  C30B11/04 ,  C30B15/00 ,  C30B15/02 ,  C30B15/04 ,  C30B35/00 ,  C30B15/06

    CPC classification number: C30B15/04 ,  C30B11/00 ,  C30B11/001 ,  C30B11/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B29/12 ,  Y10S117/914 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/102 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

    Abstract: A crystal plate 1 is grown in a continuous process by first purifying a crystal source material, a crystal melt or powder, in a purification station 3. Valves 7 control the flow of purified crystal melt or source powder 9 to a first hot zone 11, whose temperature is above the melt temperature of the crystal. A dopant source 17 with controller 19 provides dopant to the liquefied crystal 15. The first heater zone 21 surrounding the first hot zone 11 heats the crystal above its melting temperature. The second heater zone 27 produces a temperature in the second zone which is below the melt temperature of the crystal. The liquefied crystal, the liquid solid interface and the first portion of the crystal are supported in a boat-shaped crucible container with a bottom 31 and side walls. As the crystal leaves the support plate 31 it passes on to a conveyor 33. The crystal moves within an enclosure 43, which has a noble gas or noble gas and reactant gas atmosphere 45. A large heater has a first zone 37 which heats the initial part of the crystal apparatus to a temperature below the melt temperature, and a second zone 39 which maintains the crystal at a lower temperature. A purified and doped crystal emerges from the enclosure.

    Abstract translation: 通过在净化站3中首先纯化晶体源材料，晶体熔体或粉末，在连续工艺中生长晶体板1.阀7控制纯化的晶体熔体或源粉末9向第一热区11的流动， 其温度高于晶体的熔融温度。 具有控制器19的掺杂剂源17向液化晶体15提供掺杂剂。围绕第一热区11的第一加热区21将晶体加热到其熔融温度以上。 第二加热器区域27在第二区域中产生低于晶体熔融温度的温度。 液晶，液体固体界面和晶体的第一部分被支撑在具有底部31和侧壁的船形坩埚容器中。 当晶体离开支撑板31时，它传递到输送机33.晶体在具有惰性气体或惰性气体和反应气体气氛45的外壳43内移动。大型加热器具有第一区域37，其加热初始 晶体装置的一部分到低于熔融温度的温度，以及将晶体保持在较低温度的第二区39。 纯化和掺杂的晶体从外壳中出现。

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