公开(公告)号：US06364946B2

公开(公告)日：2002-04-02

申请号：US09798631

申请日：2001-03-02

Applicant: Joerg Staeblein ,  Andreas Weisleder ,  Gunther Wehrhan ,  Burkhard Speit ,  Lutz Parthier

Inventor： Joerg Staeblein ,  Andreas Weisleder ,  Gunther Wehrhan ,  Burkhard Speit ,  Lutz Parthier

IPC: C30B1104

CPC classification number: C30B33/00 ,  C30B29/12 ,  Y10T117/10

Abstract: The method for making a uniform, large-size single crystal of calcium fluoride includes placing a single precursor crystal of calcium fluoride in a tempering vessel provided with a cover; introducing calcium fluoride powder into the tempering vessel and subsequently heating the single precursor crystal, preferably in intimate contact with the calcium fluoride powder, in the tempering vessel together with the calcium fluoride powder for two or more hours at temperatures above 1150° C. to temper the precursor crystal and thus form the uniform, large-scale single crystal of calcium fluoride. The uniform large-sized single crystals of calcium fluoride can be used to make improved lens, prism, light-conducting rod, optical window or other optical component for DUV photolithography, steppers, excimer lasers, wafers, computer chips and electronic devices containing the wafers and chips.

Abstract translation: 制造均匀，大尺寸的氟化钙单晶的方法包括将氟化钙的单一前体晶体放置在设置有盖的回火容器中; 将氟化钙粉末引入回火容器中，随后在回火容器中与氟化钙粉末一起加热单一前体晶体，优选与氟化钙粉末紧密接触，与氟化钙粉末一起在高于1150℃的温度下搅拌两个或更多小时以回火 前体晶体，从而形成均匀，大规模的氟化钙单晶。 均匀的大尺寸单晶氟化钙可用于制造用于DUV光刻，步进器，准分子激光器，晶片，计算机芯片和包含晶片的电子器件的改进的透镜，棱镜，导光杆，光学窗口或其他光学部件 与芯片。

公开(公告)号：US06270569B1

公开(公告)日：2001-08-07

申请号：US09096458

申请日：1998-06-11

Applicant: Masatomo Shibata ,  Takashi Furuya

Inventor： Masatomo Shibata ,  Takashi Furuya

IPC: C30B1104

CPC classification number: C30B19/00 ,  C01B21/0602 ,  C01B21/0632 ,  C01B21/0722 ,  C01P2004/10 ,  C01P2004/61 ,  C01P2006/60 ,  C30B9/00 ,  C30B15/00 ,  C30B29/403 ,  C30B29/406

Abstract: A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.

Abstract translation: 将III族金属元素加热熔化，将含有氮原子的气体NH 3在低于所得氮化物的熔点的温度下注入到III族金属元素的熔体3中，从而制备氮化物微晶 的III族元素与III族金属元素的熔体3中的熔体3具有高润湿性。 使用如上所述获得的III族氮化物微晶和III族金属元素溶液的混合物作为液相生长的起始材料或通过从混合物中除去第III族金属材料获得的III族氮化物粉末作为 气相生长的原料。 此外，将种子晶体或基板晶体浸渍在诸如镓的III族元素的熔体中，包含诸如氨的氮气的气体的气泡间歇地与晶体的表面接触，并且III族元素和 允许含氮的气体在晶种或基板晶体的表面上彼此反应，从而允许III族元素的氮化物晶体生长在晶种或基板晶体的表面上。

公开(公告)号：US06171390B2

公开(公告)日：2001-01-09

申请号：US09273053

申请日：1999-03-19

Applicant: Hidetaka Satoh ,  Makoto Kambara ,  Kouichi Miyake ,  Yuh Shiohara

Inventor： Hidetaka Satoh ,  Makoto Kambara ,  Kouichi Miyake ,  Yuh Shiohara

IPC: C30B1104

CPC classification number: C30B29/225 ,  C30B9/00 ,  C30B11/00

Abstract: There is provided a method for preparing a large and perfect oxide crystal useful for oxide superconductors and laser transmitting elements. In the present method for preparing a large oxide single crystalline material such as superconductive crystals of RE123, a crystal precursor material is supercooled prior to the solidification thereof in the course of crystal growth of the oxide by a supercooling solidification process, followed by subjecting said precursor material to continuous slow heating while keeping the supercooled condition to promote crystal growth, as shown in FIG. 7. Seed crystals may be added to the crystal precursor material prior to solidification, if necessary, as also shown in FIG. 7.

Abstract translation: 提供了一种制备用于氧化物超导体和激光发射元件的大而完美的氧化物晶体的方法。 在制备RE123的超导结晶等大型氧化物单晶材料的现有的制造方法中，在通过过冷却固化工序的氧化物的结晶生长过程中，使其结晶前体材料在其凝固之前被过冷却，然后使所述前体 材料连续缓慢加热，同时保持过冷条件促进晶体生长，如图1所示。 如果需要，可以在凝固之前将晶体加入到晶体前体材料中，如图1所示。 7。

公开(公告)号：US06592663B1

公开(公告)日：2003-07-15

申请号：US09590063

申请日：2000-06-08

Applicant: Seiji Sarayama ,  Masahiko Shimada ,  Hisanori Yamane ,  Hirokazu Iwata

Inventor： Seiji Sarayama ,  Masahiko Shimada ,  Hisanori Yamane ,  Hirokazu Iwata

IPC: C30B1104

CPC classification number: C30B7/105 ,  C09K11/62 ,  C30B7/00 ,  C30B9/00 ,  C30B11/00 ,  C30B15/00 ,  C30B29/403 ,  C30B29/406 ,  H01L29/2003 ,  H01L29/7783 ,  Y10T117/1092 ,  Y10T117/1096 ,  Y10T428/2982

Abstract: A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.

Abstract translation: 制造GaN单晶的体晶衬底的方法包括以下步骤：在反应容器中形成碱金属的熔融焊剂，并引起来自熔融焊剂的GaN单晶的生长，其中在补充时持续生长 从反应容器外部的源含有N的化合物。

公开(公告)号：US06270570B1

公开(公告)日：2001-08-07

申请号：US09048845

申请日：1998-03-27

Applicant: Tomoru Ohba ,  Toshio Ichizaki

Inventor： Tomoru Ohba ,  Toshio Ichizaki

IPC: C30B1104

Abstract: An object of the present invention is to provide a fluoride crystal having a high transmittance with respect to an excimer laser and an excellent resistance with respect to a high output laser, and a production method therefore. The fluoride crystal of the present invention contains at least one kind of atom selected from the group consisting of Zn, Cd, Pb, Li, Bi and Na with a content of 10 ppm or less, and has an internal transmittance of 70% or more with respect to 135 nm wavelength light. The method of the present invention of producing a fluoride crystal comprises conducting a refining step of adding a scavenger to a calcium fluoride raw material and refining the raw material at least once, and a crystal growth step of further adding the scavenger to the refined raw material and growing a crystal by using a crucible lowering method, wherein the amount of the scavenger to be added in the first refining step is 0.04 to 0.1 mol % based on the raw material, and the total amount of the scavenger to be added in the subsequent refining steps and the crystal growth step is 10% to 50% based on the amount of the scavenger to be added in the first refining step.

公开(公告)号：US06743294B2

公开(公告)日：2004-06-01

申请号：US10011762

申请日：2001-12-11

Applicant: Kiril A. Pandelisev

Inventor： Kiril A. Pandelisev

IPC: C30B1104

CPC classification number: C30B15/04 ,  C30B11/00 ,  C30B11/001 ,  C30B11/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B29/12 ,  Y10S117/914 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/102 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

Abstract translation: 活性气体通过晶体源材料或熔体释放，与杂质反应，并将杂质作为气体产物或沉淀物或轻质或重质形式离开。 气体产物通过真空除去，重质产物落入熔体的底部。 轻质产品上升到熔体的顶部。 纯化后，向熔体中加入掺杂剂。 熔体远离加热器移动并形成晶体。 随后的加热区重新熔化和细化晶体，并且在最终加热区中加入掺杂剂。 将晶体分开，并将晶体的分割部分重新加热用于热处理和退火。

公开(公告)号：US06325849B1

公开(公告)日：2001-12-04

申请号：US09348686

申请日：1999-07-07

Applicant: Fujisawa Hideo ,  Katano Kizuku ,  Yamamoto Osamu

Inventor： Fujisawa Hideo ,  Katano Kizuku ,  Yamamoto Osamu

IPC: C30B1104

CPC classification number: C30B11/00 ,  C30B29/42

Abstract: Disclosed are a P-type GaAs single crystal having an average dislocation density of 500 cm−2 or lower, and a manufacturing method therefor. The P-type GaAs single crystal is characterized by containing, as dopants, Si at an atomic concentration of from 1×1017 to 1×1019 cm−3 and Zn at an atomic concentration of from 2×1018 to 6×1019 cm−3. Further, as another example, B is contained at an atomic concentration of from 1×1017 to 1×1020 cm−3.

Abstract translation: 公开了平均位错密度为500cm -2以下的P型GaAs单晶及其制造方法。 P型GaAs单晶的特征在​​于，以1×10 17〜1×10 19 cm -3的原子浓度和2×10 18〜6×10 19 cm -3的原子浓度的Zn作为掺杂剂。 此外，作为另一个例子，B的原子浓度为1×10 17〜1×10 20 cm -3。