公开(公告)号：US06270569B1

公开(公告)日：2001-08-07

申请号：US09096458

申请日：1998-06-11

Applicant: Masatomo Shibata ,  Takashi Furuya

Inventor： Masatomo Shibata ,  Takashi Furuya

IPC: C30B1104

CPC classification number: C30B19/00 ,  C01B21/0602 ,  C01B21/0632 ,  C01B21/0722 ,  C01P2004/10 ,  C01P2004/61 ,  C01P2006/60 ,  C30B9/00 ,  C30B15/00 ,  C30B29/403 ,  C30B29/406

Abstract: A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.

Abstract translation: 将III族金属元素加热熔化，将含有氮原子的气体NH 3在低于所得氮化物的熔点的温度下注入到III族金属元素的熔体3中，从而制备氮化物微晶 的III族元素与III族金属元素的熔体3中的熔体3具有高润湿性。 使用如上所述获得的III族氮化物微晶和III族金属元素溶液的混合物作为液相生长的起始材料或通过从混合物中除去第III族金属材料获得的III族氮化物粉末作为 气相生长的原料。 此外，将种子晶体或基板晶体浸渍在诸如镓的III族元素的熔体中，包含诸如氨的氮气的气体的气泡间歇地与晶体的表面接触，并且III族元素和 允许含氮的气体在晶种或基板晶体的表面上彼此反应，从而允许III族元素的氮化物晶体生长在晶种或基板晶体的表面上。

公开(公告)号：US07847313B2

公开(公告)日：2010-12-07

申请号：US11716918

申请日：2007-03-12

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L33/30

CPC classification number: C30B29/403 ,  C30B25/02 ,  H01L33/0075

Abstract: A group III-V nitride-based semiconductor substrate is formed of a group III-V nitride-based semiconductor single crystal containing an n-type impurity. The single crystal has a periodical change in concentration of the n-type impurity in a thickness direction of the substrate. The periodical change has a minimum value in concentration of the n-type impurity not less than 5×1017 cm−3 at an arbitrary point in plane of the substrate.

Abstract translation: III-V族氮化物基半导体衬底由含有n型杂质的III-V族氮化物基半导体单晶形成。 单晶在衬底的厚度方向上具有n型杂质的浓度的周期性变化。 周期性变化在衬底的任意点处具有不小于5×1017cm-3的n型杂质的浓度的最小值。

公开(公告)号：US07829913B2

公开(公告)日：2010-11-09

申请号：US10519152

申请日：2003-06-26

Applicant: Masatomo Shibata ,  Yuichi Oshima ,  Takeshi Eri ,  Akira Usui ,  Haruo Sunagawa

Inventor： Masatomo Shibata ,  Yuichi Oshima ,  Takeshi Eri ,  Akira Usui ,  Haruo Sunagawa

IPC: H01L27/01

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262

Abstract: A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More then 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.

Abstract translation: 用于生长半导体的晶体层的衬底的结构，特别是III族氮化物半导体及其制造方法。 基底在基底上包括两个多孔层。 第一多孔激光器（最外层）的孔的平均开口直径小于第二多孔层中比第一多孔层更靠近基底的孔的平均直径。 第一和第二多孔层的体积孔隙率为10〜90％。 多于50％的第一多孔层的孔从第一多孔层的表面延伸并到达第一和第二多孔层之间的界面。 即使通过常规的晶体生长方法，可以容易地在多孔基材上生长低缺陷密度的外延晶体。

公开(公告)号：US07674699B2

公开(公告)日：2010-03-09

申请号：US11431106

申请日：2006-05-10

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L21/28 ,  H01L21/20

CPC classification number: C30B25/04 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′ with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nitride semiconductor crystal layer 3 via the metal film or metal nitride film 2′.

Abstract translation: 根据本发明的III族氮化物半导体衬底通过在起始衬底1上形成具有微孔的网状结构的金属膜或金属氮化物膜2'制造，并且通过以下方式生长III族氮化物半导体晶体层3： 金属膜或金属氮化物膜2'。

公开(公告)号：US07622791B2

公开(公告)日：2009-11-24

申请号：US11892382

申请日：2007-08-22

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L29/04 ,  H01L29/20 ,  H01L21/20

CPC classification number: C30B29/403 ,  C30B25/18 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/0075 ,  H01S5/0211 ,  H01S5/3202 ,  H01S5/32341 ,  Y10S438/977

Abstract: A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region inside or outside the plane of the substrate.

Abstract translation: III-V族氮化物系半导体衬底是III-V族氮化物系单晶。 III-V族氮化物系半导体衬底具有平坦表面，并且通过在衬底的表面上突出在衬底的平面中的任意点处最接近衬底表面的低折射率表面的法向矢量制成的矢量是 会聚在基板的平面内部或外部的特定区域或特定区域。

公开(公告)号：US07435608B2

公开(公告)日：2008-10-14

申请号：US11589771

申请日：2006-10-31

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L21/00

CPC classification number: C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  C30B29/64 ,  Y10S438/977

Abstract: A III-V group nitride system semiconductor self-standing substrate is made of III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a surface that is off-oriented 0.09 degrees or more and 24 degrees or less in the a-axis or m-axis direction from C-face of the substrate.

Abstract translation: III-V族氮化物系半导体自立式衬底由具有六方晶系晶体结构的III-V族氮化物系半导体单晶制成。 该基板具有从基板的C面向a轴或m轴方向偏离取向为0.09度以上且24度以下的表面。

公开(公告)号：US07230282B2

公开(公告)日：2007-06-12

申请号：US11052764

申请日：2005-02-09

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L33/00

CPC classification number: C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

Abstract: A III–V group nitride system semiconductor self-standing substrate has: a first III–V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to a surface of the substrate, and a region with dislocation lines gathered thinly; and a second III–V group nitride system semiconductor crystal layer that is formed up to 10 μm from the surface of the substrate on the first III–V group nitride system semiconductor crystal layer and that has a dislocation density distribution that is substantially uniform.

公开(公告)号：US20070051969A1

公开(公告)日：2007-03-08

申请号：US11312634

申请日：2005-12-21

Applicant: Yuichi Oshima ,  Masatomo Shibata

Inventor： Yuichi Oshima ,  Masatomo Shibata

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L21/02576 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02573 ,  H01L33/0075 ,  H01L33/0079

Abstract: A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impurity concentration lower than the first region.

公开(公告)号：US07057204B2

公开(公告)日：2006-06-06

申请号：US10752092

申请日：2004-01-07

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L29/06 ,  H01L29/12

CPC classification number: H01L29/267 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16

Abstract: A III–V group nitride system semiconductor substrate has III–V group nitride system single crystal grown on a hetero-substrate. The III–V group nitride system semiconductor substrate has a flat surface and satisfies the relationship of θ>α, where θ [deg ] is given as an average in angles of the substrate surface to low index surfaces closest to the substrate surface measured at a plurality of arbitrary points in plane of the substrate, and a variation range of the measured angles to θ is represented by ±α [deg ].

Abstract translation: III-V族氮化物系半导体衬底具有在异质衬底上生长的III-V族氮化物系单晶。 III-V族氮化物系半导体衬底具有平坦表面，并且满足θ>α的关系，其中θ[deg]被给定为在基底表面与最靠近衬底表面的低折射率表面的平均角度 基板的平面中的多个任意点，并且与θ的测量角度的变化范围由±α[deg]表示。

公开(公告)号：US07045808B2

公开(公告)日：2006-05-16

申请号：US10799889

申请日：2004-03-15

Applicant: Masatomo Shibata

Inventor： Masatomo Shibata

IPC: H01L29/06

CPC classification number: C30B29/40 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02664 ,  H01L21/3245 ,  H01L29/2003

Abstract: A III–V nitride semiconductor substrate comprising a III–V nitride semiconductor single crystal at least in a surface portion thereof, the product of [H] and [D] being 1×1025 or less, wherein [H] represents the concentration of hydrogen atoms (the number of hydrogen atoms per cm3) in a surface portion of the single crystal, and [D] represents a dislocation density (the number of dislocations per cm2) on a single crystal surface.

Abstract translation: 至少在其表面部分包含III-V族氮化物半导体单晶的III-V族氮化物半导体衬底，[H]和[D]的乘积为1×10 25或更小，其中[H ]表示单晶表面部分中氢原子的浓度（每cm 3的氢原子数），[D]表示位错密度（每厘米的位错数 ^{2 ）。}