Invention Grant
US07674699B2 III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof
失效
III族氮化物半导体衬底，III族氮化物半导体器件用衬底及其制造方法
- Patent Title: III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof
- Patent Title (中): III族氮化物半导体衬底，III族氮化物半导体器件用衬底及其制造方法
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Application No.: US11431106Application Date: 2006-05-10
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Publication No.: US07674699B2Publication Date: 2010-03-09
- Inventor: Masatomo Shibata
- Applicant: Masatomo Shibata
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/20
Abstract:
A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′ with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nitride semiconductor crystal layer 3 via the metal film or metal nitride film 2′.
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