公开(公告)号：US20220149251A1

公开(公告)日：2022-05-12

申请号：US17523162

申请日：2021-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun PARK ,  Deukseok CHUNG ,  Tae Gon KIM ,  Min Jong BAE ,  Shin Ae JUN

IPC: H01L33/50 ,  H01L25/16

Abstract: A display panel including a wavelength conversion structure that includes a base structure including partition walls that define a first space and a second space, a first quantum dot composite disposed in the first space, and a second quantum dot composite disposed in the second space. The height of the partition wall is greater than or equal to about 5 micrometers and less than or equal to about 50 micrometers, and the first quantum dot composite provides a first top surface and the second quantum dot composite provides a second top surface. A production method for making the wavelength conversion structure uses a first ink composition that includes first quantum dots and a first matrix, and a second ink composition that includes second quantum dots and a second matrix.

公开(公告)号：US20210408138A1

公开(公告)日：2021-12-30

申请号：US17474051

申请日：2021-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Sung Hun LEE ,  Shin Ae JUN ,  Deukseok CHUNG

IPC: H01L27/32 ,  G02B3/00 ,  G02B5/20 ,  H01L51/52

Abstract: A display device includes an organic emission layer in which a first pixel area, a second pixel area and a third pixel area are defined, a color filter layer disposed on the organic emission layer and including first to third color filters overlapping the first to third pixel areas, respectively, where the first to third color filters emit first light to third light, respectively, a first optical filter layer disposed on the color filter layer and which transmits at least one of the first light and the second light and reflects or absorbs the third light, and a light-focusing layer disposed between the color filter layer and the organic emission layer and including first to third light-focusing parts overlapping the first to third pixel areas, respectively, where at least one of the first to third color filters includes quantum dots.

公开(公告)号：US20210301200A1

公开(公告)日：2021-09-30

申请号：US17346793

申请日：2021-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd ,  SAMSUNG SDI CO., LTD.

Inventor： Tae Gon KIM ,  Ha Il KWON ,  Shin Ae JUN

IPC: C09K11/02 ,  G03F7/00 ,  C08K3/00 ,  C09D5/22 ,  C09K11/88 ,  G02B5/20 ,  G02F1/1335 ,  G03F7/004 ,  G03F7/031 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L33/50

Abstract: A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

公开(公告)号：US20210102120A1

公开(公告)日：2021-04-08

申请号：US17106317

申请日：2020-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon KIM ,  Seonmyeong CHOI ,  Jongmin LEE ,  Tae Gon KIM ,  Young Seok PARK ,  Shin Ae JUN

IPC: C09K11/88 ,  G03F7/004 ,  G03F7/032 ,  G03F7/029 ,  H01L27/32 ,  G02F1/13357 ,  C09K11/08

Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

公开(公告)号：US20200217974A1

公开(公告)日：2020-07-09

申请号：US16825293

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SAMSUNG DISPLAY CO., LTD. ,  SAMSUNG SDI CO., LTD.

Inventor： Garam PARK ,  Tae Gon KIM ,  Nayoun WON ,  Shin Ae JUN ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Shang Hyeun PARK ,  Jooyeon AHN ,  Yuho WON ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: G01T7/00 ,  A61B6/06 ,  G21K1/02 ,  A61B6/00

Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.

公开(公告)号：US20190211265A1

公开(公告)日：2019-07-11

申请号：US16245594

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Tae Gon KIM ,  Nayoun WON ,  Shin Ae JUN ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Shang Hyeun PARK ,  Jooyeon AHN ,  Yuho WON ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: C09K11/88 ,  C09K11/02 ,  H01L27/32 ,  F21V8/00 ,  G02F1/1335

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  G02B6/005 ,  G02F1/133514 ,  G02F1/133617 ,  G02F2001/133614 ,  G02F2202/36 ,  H01L27/322 ,  H05B33/14

Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.

公开(公告)号：US20190185743A1

公开(公告)日：2019-06-20

申请号：US16223186

申请日：2018-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Deukseok CHUNG ,  Jooyeon AHN ,  Shin Ae JUN

IPC: C09K11/02 ,  H01L27/32 ,  H01L51/52 ,  C09K11/08 ,  G02F1/1335 ,  C09K11/70 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C09K11/025 ,  B82Y30/00 ,  B82Y40/00 ,  C08G77/04 ,  C09K11/0883 ,  C09K11/565 ,  C09K11/70 ,  C09K11/703 ,  G02F1/133516 ,  G02F1/133528 ,  G02F1/133617 ,  G02F2001/133565 ,  G02F2201/52 ,  H01L27/322 ,  H01L51/5284 ,  H01L2251/5369 ,  H05B33/22

Abstract: A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.

公开(公告)号：US20180239247A1

公开(公告)日：2018-08-23

申请号：US15900554

申请日：2018-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ha Il KWON ,  Tae Gon KIM ,  Jongmin LEE ,  Shin Ae JUN

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/075 ,  C09K11/02 ,  C09K11/70 ,  C09K11/56 ,  G03F7/031 ,  G02F1/1335

CPC classification number: G03F7/0044 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  G02F1/133617 ,  G02F2202/36 ,  G03F7/0007 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/031 ,  G03F7/0752 ,  G03F7/0755 ,  G03F7/0758 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/322 ,  G03F7/40

Abstract: A photosensitive composition including a quantum dot; a carboxylic acid group-containing binder; a multi-thiol compound including at least two thiol groups at its terminal ends; a photopolymerizable monomer including a carbon-carbon double bond; a metal oxide fine particle including an organic compound represented by Chemical Formula 1 or a moiety derived from the organic compound at a surface of the metal oxide fine particle; a polymeric stabilizer; a photoinitiator; and a solvent, a production method thereof, a quantum dot polymer composite prepared therefrom, and a layered structure and an electronic device including the same are disclosed: (AnSiR)4-n  Chemical Formula 1 wherein n, A, and R are the same as defined in the specification.

公开(公告)号：US20180158911A1

公开(公告)日：2018-06-07

申请号：US15887773

申请日：2018-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuichiro SASAKI ,  Bong Soo KIM ,  Tae Gon KIM ,  Yoshiya MORIYAMA ,  Seung Hyun SONG ,  Alexander SCHMIDT ,  Abraham YOO ,  Heung Soon LEE ,  Kyung In CHOI

IPC: H01L29/10 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1083 ,  H01L21/2236 ,  H01L21/26586 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

公开(公告)号：US20180044586A1

公开(公告)日：2018-02-15

申请号：US15675251

申请日：2017-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Ha Il KWON ,  Tae Gon KIM ,  Jooyeon AHN ,  Nayoun WON ,  Shin Ae JUN ,  Eun Joo JANG

IPC: C09K11/08 ,  H01L33/34 ,  H01L33/30 ,  H01L33/06 ,  H01L33/28

CPC classification number: C09K11/08 ,  C01P2004/03 ,  C01P2004/60 ,  C01P2004/62 ,  C09K11/025 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/502 ,  H01L2924/0001 ,  H01L2933/0033

Abstract: A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers.