公开(公告)号：US20190066749A1

公开(公告)日：2019-02-28

申请号：US16177186

申请日：2018-10-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroaki YODA ,  Naoharu SHIMOMURA ,  Yoshiaki SAITO ,  Yuichi OHSAWA ,  Keiko ABE

IPC: G11C11/16

Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.

公开(公告)号：US20180268886A1

公开(公告)日：2018-09-20

申请号：US15691991

申请日：2017-08-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Mizue ISHIKAWA ,  Yushi KATO ,  Yoshiaki SAITO ,  Soichi OIKAWA ,  Hiroaki YODA

IPC: G11C11/16 ,  G11C5/08 ,  H01L27/22 ,  G11C11/18 ,  H01L43/04 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C5/08 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/226 ,  H01L43/04 ,  H01L43/10

Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.

公开(公告)号：US20170076769A1

公开(公告)日：2017-03-16

申请号：US15262139

申请日：2016-09-12

Applicant: Kabushiki Kaisha Toshiba

Inventor： Satoshi SHIROTORI ,  Hiroaki YODA ,  Yuichi OHSAWA ,  Yuuzo KAMIGUCHI ,  Naoharu SHIMOMURA ,  Tadaomi DAIBOU ,  Tomoaki INOKUCHI

IPC: G11C11/16 ,  H01L43/10 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L23/528 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Abstract translation: 实施例的磁存储器包括：第一至第三端子; 包括第一磁性层，第二磁性层和第一非磁性层的磁阻元件; 包括第一至第三部分的第二非磁性层，第一部分位于第二和第三部分之间，第二和第三部分分别电连接到第二和第三端子，第一磁性层设置在第一部分之间 和第一非磁性层; 以及包括第四至第六部分的第三非磁性层，所述第四部分位于所述第一部分和所述第一磁性层之间，所述第五部分包括从所述磁阻元件延伸到所述第二端子的第一区域，所述第六部分包括第二部分， 区域从磁阻元件延伸到第三端子。

公开(公告)号：US20160315251A1

公开(公告)日：2016-10-27

申请号：US15198543

申请日：2016-06-30

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toshihiko NAGASE ,  Tadashi KAI ,  Youngmin EEH ,  Koji UEDA ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Hiroaki YODA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

Abstract translation: 一种磁阻元件，包括第一磁性层; 设置在第一磁性层上的第一非磁性层，由SrTiO 3，SrFeO 3，LaAlO 3，NdCoO 3或BN形成的第一非磁性层; 以及设置在所述第一非磁性层上的第二磁性层，其中所述第一非磁性层与所述第一磁性层晶格匹配，并且所述第二磁性层与所述第一非磁性层晶格匹配。