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公开(公告)号：US09548324B2
公开(公告)日：2017-01-17
申请号：US14430310
申请日：2014-05-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Gang Wang , Dongfang Wang , Wei Liu , Jingang Fang
IPC: H01L27/12 , H01L29/786 , H01L21/027
CPC classification number: H01L27/1288 , H01L21/0274 , H01L29/786 , H01L2924/0002 , H01L2924/00
Abstract: An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate (20), a first metal layer including patterns of gate electrodes (21, 24) of a first and second TFTs, an active layer (27) and a gate insulation layer (28) are formed on the substrate; forming an etch stop layer film and a photoresist sequentially on the substrate (20), and allowing the photoresist to form a first, second and third regions through gray-scale exposing and developing; forming a pattern of an etch stop layer (29), a connection via hole (30), and a contact via hole (31) respectively in the first, second and third regions through a patterning process; and forming source electrodes and drain electrodes (22, 23,25, 26) of the first and second TFTs. Photoresist of different thicknesses are disposed according to etch depths, thereby avoiding the over-etch of relatively shallow via holes.
Abstract translation: 公开了阵列基板及其制造方法。 该方法包括提供衬底（20）的步骤，包括第一和第二TFT的栅电极（21,24）的图案的第一金属层，有源层（27）和栅绝缘层（28）形成在 基材; 在衬底（20）上依次形成蚀刻停止层膜和光致抗蚀剂，并且通过灰度曝光和显影使光致抗蚀剂形成第一，第二和第三区域; 通过图案化工艺在第一，第二和第三区域分别形成蚀刻停止层（29），连接通孔（30）和接触通孔（31）的图案; 以及形成所述第一和第二TFT的源电极和漏电极（22,23,25,26）。 根据蚀刻深度设置不同厚度的光刻胶，从而避免相对浅的通孔的过度蚀刻。
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32.发明授权Thin film transistor and method for manufacturing the same, array substrate and display device 有权薄膜晶体管及其制造方法，阵列基板及显示装置公开(公告)号：US09240485B2
公开(公告)日：2016-01-19
申请号：US14352182
申请日：2013-07-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiang Liu , Gang Wang , Jianshe Xue
IPC: H01L29/786 , H01L29/45 , H01L21/441 , H01L27/12 , H01L29/49 , H01L29/66
CPC classification number: H01L29/78606 , H01L21/441 , H01L27/1225 , H01L27/1259 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693
Abstract: A thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer.
Abstract translation: 薄膜晶体管包括衬底; 栅电极，源电极，漏电极和形成在基板上的半导体层; 栅电极和半导体层之间或栅电极与源电极和漏电极之间的栅极绝缘层; 所述半导体层与所述源电极和漏电极之间的蚀刻停止层，其中具有源极接触孔和漏极接触孔; 以及源极和半导体层之间的源极缓冲层以及漏极和半导体层之间的漏极缓冲层。 源极和漏极是金属Cu电极，源极和漏极缓冲层是Cu合金层。
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33.发明申请公开(公告)号：US20140175385A1
公开(公告)日：2014-06-26
申请号：US13878905
申请日：2012-10-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Gang Wang , Woobong Lee , Li Zhang
CPC classification number: H01L27/3276 , H01L27/1225 , H01L27/3248 , H01L51/5206 , H01L51/5221 , H01L51/5234 , H01L51/5271 , H01L51/56 , H01L2227/323 , H01L2251/305 , H01L2251/5323 , H01L2251/5353
Abstract: Embodiments of the invention disclose an OLED device, an AMOLED display device and a method for manufacturing the AMOLED display device. the AMOLED display device comprises a TFT active layer, a pixel electrode layer and an OLED device; the OLED device comprises a cathode layer and a functional layer, and the pixel electrode layer serves as the anode layer of the OLED device; alternatively, the OLED device comprises an anode layer and a functional layer, and the pixel electrode layer serves as the cathode layer of the OLED device. Moreover, the TFT active layer and the pixel electrode layer are formed from a same IGZO film by a patterning process.
Abstract translation: 本发明的实施例公开了OLED装置，AMOLED显示装置和用于制造AMOLED显示装置的方法。 AMOLED显示装置包括TFT有源层，像素电极层和OLED器件; OLED器件包括阴极层和功能层，并且像素电极层用作OLED器件的阳极层; 或者，OLED器件包括阳极层和功能层，并且像素电极层用作OLED器件的阴极层。 此外，TFT有源层和像素电极层通过图案化工艺由相同的IGZO膜形成。
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34.发明申请Thin Film Transistor and Manufacturing Method Thereof, an Array Substrate and a Display Device 有权薄膜晶体管及其制造方法，阵列基板和显示装置公开(公告)号：US20140110716A1
公开(公告)日：2014-04-24
申请号：US14057728
申请日：2013-10-18
Applicant: BOE Technology Group Co., Ltd.
IPC: H01L29/786 , H01L21/28 , H01L29/66
CPC classification number: H01L29/786 , H01L21/28008 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/7869
Abstract: Embodiments of the present invention provide a thin film transistor and its manufacturing method, an array substrate and a display device, to improve the electrical performance of the thin film transistor and improve the picture quality of images displayed by the display device. The thin film transistor includes: a substrate; a gate, a source, a drain and a semiconductor layer formed on the substrate; a first gate protection layer; a gate isolation layer; and a second gate protection layer. The first gate protection layer is at least partly located between the gate and the semiconductor layer, and is an insulating layer. The gate isolation layer is at least partly located between the first gate protection layer and the second gate protection layer, and is a conductive layer. The second gate protection layer is at least partly located between the gate isolation layer and the semiconductor layer, and is an insulating layer.
Abstract translation: 本发明的实施例提供薄膜晶体管及其制造方法，阵列基板和显示装置，以改善薄膜晶体管的电性能并提高由显示装置显示的图像的图像质量。 薄膜晶体管包括：基板; 形成在基板上的栅极，源极，漏极和半导体层; 第一栅极保护层; 栅极隔离层; 和第二栅极保护层。 第一栅极保护层至少部分地位于栅极和半导体层之间，并且是绝缘层。 栅极隔离层至少部分地位于第一栅极保护层和第二栅极保护层之间，并且是导电层。 第二栅极保护层至少部分地位于栅极隔离层和半导体层之间，并且是绝缘层。
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公开(公告)号：US20140085568A1
公开(公告)日：2014-03-27
申请号：US14016723
申请日：2013-09-03
Applicant: BOE Technology Group Co., Ltd.
Inventor： Wenbo Li , Qingjiang Wang , Gang Wang
IPC: G02F1/1335 , G02F1/1334
CPC classification number: G02F1/133615 , G02F1/1334 , G02F1/13476 , G02F2001/133618
Abstract: A display device is provided, comprising a display panel and a polymer dispersed liquid crystal panel overlapped in order, and an ambient light source system disposed at a side of the polymer dispersed liquid crystal panel opposite to the display panel. The display device is simplified in structure and driving circuit thereof while avoiding impact on heat-resistance performance of the PDLC panel resulted from over temperature of the light source at side of the light guide plate.
Abstract translation: 提供一种显示装置，包括显示面板和依次重叠的聚合物分散液晶面板，以及设置在与显示面板相对的聚合物分散液晶面侧的环境光源系统。 显示装置的结构和驱动电路被简化，同时避免了由导光板一侧的光源的过高导致的PDLC面板的耐热性能的影响。
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Patent Agency Ranking
公开(公告)号：US12236831B2
公开(公告)日：2025-02-25
申请号：US18278706
申请日：2022-07-01
Inventor： Kunyan Shi , Yafei Chen , Gang Wang , Qiang Fu , Erlong Song , Kai Zhang , Peng Xu , Xingrui Cai
IPC: G09G3/20 , G09G3/3225 , G09G3/3233 , G09G3/3258 , H10K59/131
Abstract: The present disclosure provides a pixel driving circuit and a display panel. The pixel drive circuit includes: a data writing sub-circuit, a threshold compensation sub-circuit, a driving sub-circuit and a storage sub-circuit, the data writing sub-circuit includes a fourth transistor, which includes a first electrode connected with a data line, a second electrode connected with a first terminal of the driving sub-circuit, and a control electrode connected with a first scan signal line, and the fourth transistor is an oxide thin film transistor; the threshold compensation sub-circuit is configured to compensate a threshold voltage of the driving sub-circuit in response to a second scan signal; the storage sub-circuit is configured to store a data voltage signal; the driving sub-circuit is configured to provide a driving current for a light emitting device to be driven according to voltages of the first terminal and a control terminal thereof.
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公开(公告)号：US12230182B2
公开(公告)日：2025-02-18
申请号：US18273201
申请日：2022-07-08
Inventor： Xinyu Wei , Kai Zhang , Qiang Fu , Gang Wang , Erlong Song , Hongmei Fan , Kunyan Shi
IPC: G09G3/20 , G09G3/3225 , G09G3/3233 , G09G3/3258 , H10K59/131
Abstract: A pixel circuit and a driving method therefor, a display substrate, and a display apparatus. The pixel circuit includes a driving sub circuit, a data writing sub circuit, a first light-emitting control sub circuit, a first reset sub circuit, and a bias sub circuit; the first reset sub circuit is connected to a first node and configured to write a first reset voltage to the first node in response to a first reset control signal; and the bias sub circuit is connected to a second node and configured to write a reference voltage to the second node in response to a bias control signal, thereby turning on the driving sub circuit.
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公开(公告)号：US10455751B2
公开(公告)日：2019-10-22
申请号：US15333549
申请日：2016-10-25
Inventor： Gang Wang , Jianlei Yang , Jie Wang , Chunming Li
Abstract: A maintenance fixture for PCB′A and an operating method thereof are disclosed to mitigate the problems that the PCB′A may be scrapped upon removing a conductive adhesive. The maintenance fixture includes a cover plate and a support baseplate which is configured to support a PCB′A and provided with a stopper unit; the cover plate is movably connected to the support baseplate at a first end to be rotatable towards and away from the support baseplate, and is provided with a barrier layer at a first side which is perpendicular to the rotation direction and close to the support baseplate; the barrier layer is configured to be contacted with the PCB′A upon the cover plate being rotated towards the support baseplate to cover an electronic component zone and expose an electrode zone of the PCB′A.
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39.发明授权公开(公告)号：US10083988B2
公开(公告)日：2018-09-25
申请号：US14429165
申请日：2014-06-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaodi Liu , Gang Wang
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1214 , H01L27/1233 , H01L27/1259 , H01L27/127 , H01L29/786 , H01L29/78696
Abstract: The present invention provides a complementary thin film transistor and a manufacturing method thereof, an array substrate and a display apparatus, relates to the field of manufacturing technology of thin film transistor, and can solve the problem that active layer materials of first and second thin film transistors in a complementary thin film transistor of the prior art have influence with each other. The manufacturing method of the present invention comprises steps of: forming a pattern comprising an active layer of a first thin film transistor and a protective layer on a base by a patterning process, and the protective layer is at least located above the active layer of the thin film transistor; and forming a pattern of an active layer of a second thin film transistor on the base subjected to above step by a patterning process. The present invention may be applied to various circuits and systems.
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40.发明申请公开(公告)号：US20180175204A1
公开(公告)日：2018-06-21
申请号：US15127262
申请日：2015-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Longyan Wang , Yongqian Li , Cuili Gai , Quanhu Li , Baoxia Zhang , Jingwen Yin , Kun Cao , Zhongyuan Wu , Gang Wang
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66 , H01L27/32 , H01L27/12
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L27/3244 , H01L27/3262 , H01L29/41733 , H01L29/42384 , H01L29/66969 , H01L51/0023 , H01L51/105
Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode include a first conductive layer provided on the active layer, and an etching rate of a material of the first conductive layer is greater than an etching rate of a material of the active layer in an etching liquid. The problem that the active layer of the thin film transistor is easily corroded in a back channel etch process is avoided, a number of patterning processes is reduced, and fabrication cost is reduced.
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