Invention Grant
- Patent Title: Array substrate and method for fabricating the same
- Patent Title (中): 阵列基板及其制造方法
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Application No.: US14430310Application Date: 2014-05-12
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Publication No.: US09548324B2Publication Date: 2017-01-17
- Inventor: Yanzhao Li , Gang Wang , Dongfang Wang , Wei Liu , Jingang Fang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201310741939 20131227
- International Application: PCT/CN2014/077285 WO 20140512
- International Announcement: WO2015/096350 WO 20150702
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L21/027

Abstract:
An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate (20), a first metal layer including patterns of gate electrodes (21, 24) of a first and second TFTs, an active layer (27) and a gate insulation layer (28) are formed on the substrate; forming an etch stop layer film and a photoresist sequentially on the substrate (20), and allowing the photoresist to form a first, second and third regions through gray-scale exposing and developing; forming a pattern of an etch stop layer (29), a connection via hole (30), and a contact via hole (31) respectively in the first, second and third regions through a patterning process; and forming source electrodes and drain electrodes (22, 23,25, 26) of the first and second TFTs. Photoresist of different thicknesses are disposed according to etch depths, thereby avoiding the over-etch of relatively shallow via holes.
Public/Granted literature
- US20160027819A1 ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-01-28
Information query
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