公开(公告)号：US10510901B2

公开(公告)日：2019-12-17

申请号：US15127262

申请日：2015-09-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Longyan Wang ,  Yongqian Li ,  Cuili Gai ,  Quanhu Li ,  Baoxia Zhang ,  Jingwen Yin ,  Kun Cao ,  Zhongyuan Wu ,  Gang Wang

IPC: H01L29/76 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode include a first conductive layer provided on the active layer, and an etching rate of a material of the first conductive layer is greater than an etching rate of a material of the active layer in an etching liquid. The problem that the active layer of the thin film transistor is easily corroded in a back channel etch process is avoided, a number of patterning processes is reduced, and fabrication cost is reduced.

公开(公告)号：US10438542B2

公开(公告)日：2019-10-08

申请号：US15518335

申请日：2015-09-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yongqian Li ,  Longyan Wang ,  Cuili Gai

IPC: G09G3/3291 ,  G09G3/3225 ,  G09G3/3233

Abstract: A detection circuit, a detection method and a pixel driving circuit are disclosed in the embodiments of the present disclosure. The detection circuit comprises a first detection unit, a second detection unit, a load unit, a light emitting device and a driving unit. The first detection module connected to the driving unit and the load unit. The second detection unit is connected to the light emitting device and the load unit.

公开(公告)号：US20180233082A1

公开(公告)日：2018-08-16

申请号：US15757786

申请日：2015-08-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Longyan Wang ,  Yongqian Li

IPC: G09G3/3233 ,  G09G3/3258

CPC classification number: G09G3/3233 ,  G09G3/3258 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0838 ,  G09G2300/0842 ,  G09G2300/0885 ,  G09G2320/043

Abstract: The present disclosure provides a compensating circuit. The compensating circuit includes a feedback module (101), and a driving transistor with a first gate, a second gate, a first electrode, and a second electrode. A first terminal of the feedback module (101) is connected to a first voltage source and a second terminal of the feedback module (101) is connected to the first electrode and the second gate of the driving transistor; and the first gate of the driving transistor is connected to a data line, and the second electrode of the driving transistor for outputting a driving current.

公开(公告)号：US10546519B2

公开(公告)日：2020-01-28

申请号：US15565853

申请日：2017-03-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ling Wang ,  Quanhu Li ,  Longyan Wang ,  Baoxia Zhang ,  Cuili Gai ,  Yicheng Lin

IPC: G11C19/00 ,  G09G3/20 ,  G09G3/36 ,  G09G3/3266 ,  G11C19/28

Abstract: The embodiments of the present disclosure disclose a gate driving circuit and a display panel. In the gate driving circuit, a control unit of a shift register may input a dual pulse control signal to a first control terminal of an output unit; and the output unit outputs a scanning signal having a pulse width equal to a pulse period of the dual pulse control signal to a corresponding gate line under the control of the dual pulse control signal. In this way, the output unit is controlled by the control unit to output a scanning signal of which a pulse width may be modulated, so as to output a gate signal of which a pulse width may be modulated.

公开(公告)号：US09954070B2

公开(公告)日：2018-04-24

申请号：US14913581

申请日：2015-07-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Longyan Wang ,  Yongqian Li ,  Kun Cao ,  Quanhu Li ,  Jingwen Yin ,  Baoxia Zhang ,  Cuili Gai ,  Zhongyuan Wu ,  Gang Wang

IPC: H01L29/10 ,  H01L29/04 ,  H01L29/45 ,  H01L29/786 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L21/28575 ,  H01L21/32134 ,  H01L21/443 ,  H01L21/47635 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78681 ,  H01L29/7869

Abstract: A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242). The source electrode (241) and the drain electrode (242) are formed of at least two materials, the forming materials of the source electrode (241) and the drain electrode (242) can create a cell reaction in a corresponding etching solution so as to be etched, and material of the active layer (23) is not corroded by the etching solution. With the thin film transistor and manufacturing method thereof according to embodiments of the invention, a problem that an active layer is liable to be corroded in an etching procedure of a source electrode and a drain electrode can be solved, and thus the thin film transistor device can be manufactured by using a back channel etch process. Consequently, the process number for manufacture of the thin film transistor is decreased, and the manufacturing cost is saved.

公开(公告)号：US09859350B2

公开(公告)日：2018-01-02

申请号：US15021459

申请日：2015-08-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongqian Li ,  Longyan Wang ,  Cuili Gai

IPC: H01L29/08 ,  H01L21/00 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

CPC classification number: H01L27/3258 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/5218 ,  H01L51/5265 ,  H01L2251/5315 ,  H01L2251/558

Abstract: An array substrate of an organic light-emitting display device, a fabrication method thereof and an organic light-emitting display device are provided. The array substrate comprises a plurality of pixel units arranged in array, wherein, at least one of the pixel units includes: an organic light-emitting diode (40) and a first thin film transistor (20) for controlling the organic light-emitting diode (40) which are formed on a base substrate (10), wherein, the organic light-emitting diode (40) includes a first electrode (107), a second electrode (110) and a light-emitting layer (109) located between the first electrode (107) and the second electrode (110), the first electrode (107) of the organic light-emitting diode (40) being connected with a drain electrode (104) of the first thin film transistor (20); and a conductive layer (111) and an insulating layer (112) formed between the first thin film transistor (20) and the organic light-emitting diode (40), wherein, the first electrode (107) of the organic light-emitting diode (40), the insulating layer (111) and the conductive layer (112) form a capacitor, and the conductive layer (111) is connected with a first gate electrode (100) of the first thin film transistor (20). The array substrate of the organic light-emitting display device, the fabrication method thereof and the organic light-emitting display device can effectively increase a storage capacitance value of a pixel unit, so as to improve display quality.

公开(公告)号：US20190066588A1

公开(公告)日：2019-02-28

申请号：US15736519

申请日：2017-06-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yicheng Lin ,  Quanhu Li ,  Cuili Gai ,  Baoxia Zhang ,  Longyan Wang ,  Ling Wang

IPC: G09G3/3258 ,  H01L27/32

Abstract: An OLED driving circuit, an array substrate and a display device are provided. The OLED driving circuit includes a plurality of driving TFTs and a plurality of sense TFTs. Each sense TFT is configured to compensate for a threshold voltage of the respective driving TFT. Each sense TFT corresponds to a respective one of the driving TFTs, a source electrode of each sense TFT is connected to a sense line, and a drain electrode thereof is connected to a drain electrode of the respective driving TFT. The plurality of sense TFTs is divided into a plurality of groups, each group includes at least two sense TFTs which share a same gate electrode and a same source electrode and are connected to a same sense line.

公开(公告)号：US20170309231A1

公开(公告)日：2017-10-26

申请号：US15518335

申请日：2015-09-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yongqian Li ,  Longyan Wang ,  Cuili Gai

IPC: G09G3/3291 ,  G09G3/3225

CPC classification number: G09G3/3291 ,  G09G3/3225 ,  G09G3/3233 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/029 ,  G09G2320/045

Abstract: A detection circuit, a detection method and a pixel driving circuit are disclosed in the embodiments of the present disclosure. The detection circuit comprises a first detection unit, a second detection unit, a load unit, a light emitting device and a driving unit. The first detection module is connected to the driving unit and the load unit. The second detection unit is connected to the light emitting device and the load unit.

公开(公告)号：US20170040351A1

公开(公告)日：2017-02-09

申请号：US14913322

申请日：2015-08-13

Applicant: Boe Technology Group Co., Ltd.

Inventor： Quanhu Li ,  Yongqian Li ,  Longyan Wang

IPC: H01L27/12 ,  H01L21/768

CPC classification number: H01L27/1259 ,  H01L21/76805 ,  H01L21/76892 ,  H01L21/77 ,  H01L27/0288 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248

Abstract: The embodiments of the present disclosure provide an array substrate and manufacturing method thereof, and a display device, which relates to the display technical field. The manufacturing method of the array substrate comprises forming thin film transistors and signal lines, and further comprises forming signal line connecting lines, wherein the signal line connecting lines at least electrically connect the same type of signal lines. Prior to completion of manufacturing the last film layer in the manufacture procedure of said array substrate, the method further comprises etching via holes on the signal line connecting lines or at the positions of the signal lines which are close to the signal line connecting lines, said via holes being used for cutting off electric connections between the signal lines. It is for use in the manufacture of an array substrate and display device.

Abstract translation: 本公开的实施例提供阵列基板及其制造方法以及与显示技术领域有关的显示装置。 阵列基板的制造方法包括形成薄膜晶体管和信号线，并且还包括形成信号线连接线，其中信号线连接线至少电连接相同类型的信号线。 在制造所述阵列基板的制造过程中的最后一个薄膜层之前，该方法还包括在信号线连接线上或靠近信号线连接线的信号线的位置处蚀刻通孔，所述 通孔用于切断信号线之间的电连接。 它用于制造阵列基板和显示装置。

公开(公告)号：US20180175204A1

公开(公告)日：2018-06-21

申请号：US15127262

申请日：2015-09-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Longyan Wang ,  Yongqian Li ,  Cuili Gai ,  Quanhu Li ,  Baoxia Zhang ,  Jingwen Yin ,  Kun Cao ,  Zhongyuan Wu ,  Gang Wang

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L51/0023 ,  H01L51/105

Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode include a first conductive layer provided on the active layer, and an etching rate of a material of the first conductive layer is greater than an etching rate of a material of the active layer in an etching liquid. The problem that the active layer of the thin film transistor is easily corroded in a back channel etch process is avoided, a number of patterning processes is reduced, and fabrication cost is reduced.