公开(公告)号：US11646175B2

公开(公告)日：2023-05-09

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/304 ,  H01J37/244 ,  H01J37/24 ,  H01J37/32

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/243 ,  H01J37/244 ,  H01J37/304 ,  H01J37/32357 ,  H01J2237/24535 ,  H01J2237/31701

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US20230136198A1

公开(公告)日：2023-05-04

申请号：US18147263

申请日：2022-12-28

Applicant: NuFlare Technology, Inc.

Inventor： Toshikatsu AKIBA

IPC: H01J37/05 ,  G01N23/2251

Abstract: A Wien filter includes a cylindrical yoke, a plurality of magnetic poles arranged at intervals along an inner periphery of the yoke, the magnetic poles each joined at one end thereof to the yoke, a coil wound on each of the plurality of magnetic poles, and an electrode disposed at the other end of each of the plurality of magnetic poles, with an insulator between the electrode and the magnetic pole. The magnetic poles each has a recess at the other end thereof, and the insulator and the electrode may be disposed in the recess.

公开(公告)号：US11605531B2

公开(公告)日：2023-03-14

申请号：US16956858

申请日：2018-12-13

Applicant: Battelle Memorial Institute

Inventor： Yehia M. Ibrahim ,  Richard D. Smith

IPC: H01J49/06 ,  H01J37/317 ,  H01J37/08 ,  H01J37/21 ,  H01J37/05

Abstract: Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

公开(公告)号：US20220199362A1

公开(公告)日：2022-06-23

申请号：US17610811

申请日：2020-05-14

Applicant: MI2-FACTORY GMBH

Inventor： Constantin CSATO ,  Florian KRIPPENDORF

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/05 ,  H01L21/265

Abstract: A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

公开(公告)号：US20220148851A1

公开(公告)日：2022-05-12

申请号：US17460381

申请日：2021-08-30

Applicant: ASML Netherlands B.V.

Inventor： Weiming REN ,  Shuai LI ,  Xuedong LIU ,  Zhongwei CHEN

IPC: H01J37/28 ,  H01J37/147 ,  H01J37/05 ,  H01J37/063 ,  H01J37/304 ,  H01J29/51 ,  H01J37/12

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

公开(公告)号：US11315819B2

公开(公告)日：2022-04-26

申请号：US16880540

申请日：2020-05-21

Applicant: Applied Materials, Inc.

Inventor： Qin Chen ,  Julian G. Blake ,  Michael W. Osborne ,  Steven M. Anella ,  Jonathan D. Fischer

IPC: H01L21/683 ,  H05B3/00 ,  H05F3/00 ,  H01J37/05 ,  H01J37/141 ,  H05B3/26 ,  H01J37/147 ,  H02N13/00

Abstract: A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

公开(公告)号：US20220068588A1

公开(公告)日：2022-03-03

申请号：US17310545

申请日：2020-01-27

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： HISAHIRO ANSAI

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/147 ,  H01J37/05

Abstract: An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.

公开(公告)号：US20220020556A1

公开(公告)日：2022-01-20

申请号：US17491963

申请日：2021-10-01

Applicant: Mi2-factory GmbH

Inventor： Florian KRIPPENDORF ,  Constantin CSATO

IPC: H01J37/05 ,  H01J37/317 ,  G21K1/10 ,  G21K1/04 ,  H01J37/147

Abstract: A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.

公开(公告)号：US20210405523A1

公开(公告)日：2021-12-30

申请号：US17222467

申请日：2021-04-05

Applicant: Exogenesis Corporation

Inventor： Joseph Khoury ,  Sean R. Kirkpatrick ,  Michael J. Walsh ,  James G. Bachand ,  Allen R. Kirkpatrick ,  Thomas J. Webster

IPC: G03F1/80 ,  H05H3/02 ,  H01J37/317 ,  H01L21/02 ,  H01L21/265 ,  H01L21/311 ,  H01J37/05 ,  H01J37/147 ,  G03F1/82

Abstract: A device such as a medical device and a method for making same provides a device surfaces modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets or to match surface energy of the device to that of a protein with the property of inhibition of bacterial colonization that can coat the all or part of the device surface to effect such inhibition.

公开(公告)号：US11170974B2

公开(公告)日：2021-11-09

申请号：US17097199

申请日：2020-11-13

Applicant: RaySearch Laboratories AB

Inventor： Martin Janson

IPC: H01J37/30 ,  H01J37/05 ,  H01J37/304

Abstract: It is provided a method for obtaining an energy spectrum of a focused ion beam when a Bragg peak chamber is used to measure an integrated depth dose, IDD. The method comprises the steps of: simulating doses of a set of nominally mono energetic focused ion beams; determining a lateral extension of a Bragg peak chamber to evaluate; calculating a set of theoretic component IDD curves, CIDDs, by laterally integrating the dose of the simulated set of the nominally mono energetic focused ion beams, over the lateral extension of the Bragg peak chamber; storing calculated CIDDs; obtaining a measured IDD of a focused ion beam with a nominal energy using the Bragg peak chamber; and performing a fit of a linear combination of CIDDs to the measured IDD, to determine an energy spectrum for the focused ion beam with the nominal beam energy.