公开(公告)号：US4078183A

公开(公告)日：1978-03-07

申请号：US639193

申请日：1975-12-09

申请人： Jacques Lewiner ,  Gerard Dreyfus

发明人： Jacques Lewiner ,  Gerard Dreyfus

IPC分类号： F16K31/06 ,  F15C1/04 ,  F15C3/00 ,  F16K31/02 ,  G02B6/35 ,  G02B26/02 ,  G02B26/08 ,  G09F9/37 ,  G11C11/50 ,  H01G7/02 ,  H01H59/00 ,  H01H1/04

CPC分类号： G02B6/357 ,  F15C1/04 ,  F15C3/005 ,  F16K31/02 ,  G02B26/02 ,  G02B26/08 ,  H01H59/00 ,  G02B6/3502 ,  G02B6/358 ,  H01H2059/009 ,  Y10T307/74

摘要： The invention relates to devices of the relay type, but using an electrostatic force, rather than a magnetic force, for moving the mobile element. A device according to the invention allows to produce a modification in one or several controlled circuits under the control of a modification or order in an actuating or controlled circuit.The device essentially includes two control electrodes, between which a potential difference may be applied (when desired) using an electrical power source and a control switch, and an electret constituted by an insulating element carrying electrical charges of opposite signs (negative and positive charges), the electret or the algebraic sum of which is different from zero; one of the electrodes is mobile and can occupy at least two positions.The device may be applied to realize electrical, pneumatic, hydraulic or optical switchings.

摘要翻译： 本发明涉及继电器类型的装置，但是使用静电力而不是磁力来移动移动元件。 根据本发明的装置允许在致动或受控电路中的修改或顺序的控制下在一个或多个受控电路中产生修改。

公开(公告)号：US09224448B2

公开(公告)日：2015-12-29

申请号：US14558523

申请日：2014-12-02

申请人： IMEC vzw ,  Katholieke Universiteit Leuven

发明人： Stefan Cosemans ,  Ann Witvrouw ,  Maliheh Ramezani

IPC分类号： G11C11/00 ,  G11C11/40 ,  G11C11/50 ,  G11C11/52 ,  G11C23/00 ,  G11C5/06

CPC分类号： G11C11/40 ,  G11C5/06 ,  G11C11/50 ,  G11C11/52 ,  G11C23/00

摘要： A non-volatile memory arrangement comprising a plurality of cells is disclosed. In one aspect, each cell comprises a memory element and a read selector in series. Further, the memory element is a nano-electro-mechanical switch comprising an anchor, a beam fixed to the anchor, a first and second control gate, for controlling the position of the beam, a first output node against which the beam can be positioned. The cell also comprises a read selector comprising a first selector terminal, a second selector terminal, the first selector terminal connected to the first output node. The first respectively second control gates of switches of a same word are connected together by a first respectively second write word line serving as control gate.

摘要翻译： 公开了包括多个单元的非易失性存储器装置。 在一个方面，每个单元包括串联的存储元件和读选择器。 此外，存储元件是纳米机电开关，其包括锚固件，固定到锚固器的梁，用于控制梁的位置的第一和第二控制栅极，梁可以定位的第一输出节点 。 单元还包括读选择器，包括第一选择器端子，第二选择器端子，连接到第一输出节点的第一选择器端子。 相同字的开关的第一个第二控制栅极通过用作控制栅极的第一分别为第二写入字线连接在一起。

公开(公告)号：US09076618B2

公开(公告)日：2015-07-07

申请号：US14101683

申请日：2013-12-10

申请人： Elwha LLC

发明人： Howard L. Davidson ,  Roderick A. Hyde ,  Jordin T. Kare ,  Richard T. Lord ,  Robert W. Lord ,  Nathan P. Myhrvold ,  Clarence T. Tegreene ,  Charles Whitmer ,  Lowell L. Wood, Jr.

IPC分类号： G11C11/50 ,  H01H59/00 ,  H01H1/00 ,  B82Y99/00

CPC分类号： H01H59/0009 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y99/00 ,  G11C11/50 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H2001/0078 ,  Y10S977/742 ,  Y10S977/932

摘要： A nanoelectromechanical device is provided. The nanoelectromechanical device includes a nanotube, a first contact, and a first actuator. The nanotube includes a first end, the first end supported by a first structure, a second end opposite the first end, and a first portion. The first actuator is configured to apply a first force to the nanotube, the first force causing the nanotube to buckle such that the first portion couples to the first contact.

摘要翻译： 提供了一种纳米机电装置。 纳米机电装置包括纳米管，第一接触和第一致动器。 纳米管包括第一端，由第一结构支撑的第一端，与第一端相对的第二端和第一部分。 第一致动器被配置为向纳米管施加第一力，第一力使纳米管弯曲，使得第一部分耦合到第一接触。

公开(公告)号：US09007806B2

公开(公告)日：2015-04-14

申请号：US13782263

申请日：2013-03-01

申请人： STMicroelectronics S.r.l.

发明人： Alberto Pagani ,  Marco Morelli ,  Giulio Ricotti

IPC分类号： G11C11/00 ,  G11C23/00 ,  H01H1/00 ,  G11C11/50 ,  H01H59/00 ,  H01H1/52 ,  G11C7/02 ,  G11C7/10 ,  G11C7/12 ,  G11C5/00 ,  G11C29/12 ,  G11C29/04

CPC分类号： G11C23/00 ,  G11C5/005 ,  G11C7/02 ,  G11C7/1048 ,  G11C7/12 ,  G11C11/50 ,  G11C29/12 ,  G11C2029/0409 ,  H01H1/0036 ,  H01H1/52 ,  H01H59/0009

摘要： An electromechanical memory element includes a fixed body and a deformable element attached to the fixed body. An actuator causes a deformation of the deformable element from a first position (associated with a first logic state) to a second position (associated with a second logic state) where a mobile element makes contact with a fixed element. A programming circuit then causes a weld to be formed between the mobile element and the fixed element. The memory element is thus capable of associating the first and second positions with two different logic states. The weld may be selectively dissolved to return the deformable element back to the first position.

摘要翻译： 机电存储元件包括固定体和附接到固定体的可变形元件。 致动器使可变形元件从第一位置（与第一逻辑状态相关联）变形到移动元件与固定元件接触的第二位置（与第二逻辑状态相关联）。 然后编程电路在可移动元件和固定元件之间形成焊缝。 因此，存储元件能够将第一和第二位置与两个不同的逻辑状态相关联。 可以选择性地溶解焊缝以将可变形元件返回到第一位置。

公开(公告)号：US08391057B2

公开(公告)日：2013-03-05

申请号：US12533581

申请日：2009-07-31

申请人： Min-Sang Kim ,  Ji-Myoung Lee ,  Hyun-Jun Bae ,  Dong-Won Kim ,  Jun Seo ,  Yong-Hyun Kwon ,  Weon-Wi Jang ,  Keun-Hwi Cho

发明人： Min-Sang Kim ,  Ji-Myoung Lee ,  Hyun-Jun Bae ,  Dong-Won Kim ,  Jun Seo ,  Yong-Hyun Kwon ,  Weon-Wi Jang ,  Keun-Hwi Cho

IPC分类号： G11C11/50 ,  H01L27/108

CPC分类号： H01L27/101 ,  H01L27/108 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10897 ,  H01L28/40 ,  H01L29/685

摘要： A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.

摘要翻译： 存储器件包括存储单元，其包括存储节点，第一电极和第二电极，所述存储节点存储电荷，并且当所述第二电极通电时，所述第一电极移动以连接到所述存储节点。

公开(公告)号：US08385113B2

公开(公告)日：2013-02-26

申请号：US12062326

申请日：2008-04-03

申请人： Joseph F. Pinkerton

发明人： Joseph F. Pinkerton

IPC分类号： G11C11/50

CPC分类号： B81B3/0021 ,  H02N2/18 ,  Y10S977/948

摘要： Nanoelectromechanical systems are disclosed that utilize vertically grown or placed nanometer-scale beams. The beams may be configured and arranged for use in a variety of applications, such as batteries, generators, transistors, switching assemblies, and sensors. In some generator applications, nanometer-scale beams may be fixed to a base and grown to a desired height. The beams may produce an electric potential as the beams vibrate, and may provide the electric potential to an electrical contact located at a suitable height above the base. In other embodiments, vertical beams may be grown or placed on side-by-side traces, and an electrical connection may be formed between the side-by-side traces when beams on separate traces vibrate and contact one another.

摘要翻译： 公开了利用垂直生长或放置的纳米级光束的纳米机电系统。 梁可以被配置和布置以用于各种应用中，例如电池，发电机，晶体管，开关组件和传感器。 在一些发生器应用中，纳米尺度的光束可以固定到基底并且生长到期望的高度。 当光束振动时，光束可能产生电位，并且可以向位于基底上方适当高度的电触点提供电位。 在其他实施例中，垂直光束可以生长或放置在并排轨迹上，并且当分离的迹线上的光束振动并且彼此接触时，可以在并排轨迹之间形成电连接。

公开(公告)号：US08331138B1

公开(公告)日：2012-12-11

申请号：US13103038

申请日：2011-05-06

申请人： David Richard Trossen ,  Malcolm John Wing

发明人： David Richard Trossen ,  Malcolm John Wing

IPC分类号： G11C11/50

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  Y10S977/708 ,  Y10S977/732 ,  Y10S977/943

摘要： A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.

摘要翻译： 包括混合机电和半导体存储器单元的配置位阵列以及用于寻址和控制存储器的读，写和擦除存取的电路。

公开(公告)号：US08203896B2

公开(公告)日：2012-06-19

申请号：US12911173

申请日：2010-10-25

申请人： Kuen-Long Chang ,  Chun-Hsiung Hung ,  Chuan-Ying Yu ,  Chun-Yi Lee

发明人： Kuen-Long Chang ,  Chun-Hsiung Hung ,  Chuan-Ying Yu ,  Chun-Yi Lee

IPC分类号： G11C7/00 ,  G11C11/50 ,  G11C7/04

CPC分类号： G11C29/022 ,  G11C29/02

摘要： A memory chip and method for operating the same are provided. The memory chip includes a number of pads. The method includes inputting a number of first test signals to the pads respectively, wherein the first test signals corresponding to two physically-adjacent pads are complementary; inputting a number of second test signals, respectively successive to the first test signals, to the pads, wherein the first test signal and the second test signal corresponding to each of the pads are complementary; and outputting expected data from the memory chip if the first test signals and the second test signals are successfully received by the memory chip.

摘要翻译： 提供了一种存储芯片及其操作方法。 存储器芯片包括多个焊盘。 该方法包括分别将多个第一测试信号输入到焊盘，其中对应于两个物理相邻的焊盘的第一测试信号是互补的; 将多个分别连续到第一测试信号的第二测试信号输入到焊盘，其中对应于每个焊盘的第一测试信号和第二测试信号是互补的; 以及如果所述第一测试信号和所述第二测试信号被所述存储芯片成功接收，则从所述存储器芯片输出预期数据。

公开(公告)号：US20120020151A1

公开(公告)日：2012-01-26

申请号：US12871120

申请日：2010-08-30

申请人： Wei-Hung Lin ,  Chun-Feng Lee ,  Chang-Chih Chen

发明人： Wei-Hung Lin ,  Chun-Feng Lee ,  Chang-Chih Chen

IPC分类号： G11C11/50 ,  H05K3/30

CPC分类号： H05K3/30 ,  H05K3/284 ,  H05K3/4015 ,  H05K3/4046 ,  H05K2201/10159 ,  Y10T29/4913 ,  Y10T29/49172 ,  Y10T29/4922

摘要： A storage apparatus including a circuit board, a control circuit element, a terminal module and a storage circuit element is provided. The circuit board includes a first surface, a second surface, a connect part, openings, metal contacts and metal units. The openings pass through the circuit board from the first surface to the second surface and the metal contacts are exposed on the first surface. The terminal module is disposed on the first surface and has elastic terminals and each of the elastic terminals has a first contact part and a second contact part. The first contact parts respectively contact with the metal contacts and the second contact parts respectively pass through the openings to protrude from the second surface. The metal units are disposed on the second surface and located between the openings and the connect part. Accordingly, the volume of the storage apparatus can be reduced.

摘要翻译： 提供一种包括电路板，控制电路元件，端子模块和存储电路元件的存储装置。 电路板包括第一表面，第二表面，连接部分，开口，金属触点和金属单元。 开口通过电路板从第一表面到第二表面，并且金属触点暴露在第一表面上。 端子模块设置在第一表面上并且具有弹性端子，并且每个弹性端子具有第一接触部分和第二接触部分。 第一接触部分分别与金属触点接触，第二接触部分分别通过开口从第二表面突出。 金属单元设置在第二表面上并且位于开口和连接部分之间。 因此，可以减小存储装置的体积。

公开(公告)号：US07985646B2

公开(公告)日：2011-07-26

申请号：US11712990

申请日：2007-03-02

申请人： Jin-gyoo Yoo ,  Cheol-soon Kim ,  Jung-hoon Lee

发明人： Jin-gyoo Yoo ,  Cheol-soon Kim ,  Jung-hoon Lee

IPC分类号： G11C11/50

CPC分类号： H01L27/10 ,  B82Y10/00

摘要： A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.

摘要翻译： 提供了制造纳米线存储器件的方法，以及以相同方法使用的控制纳米线形成的系统。 在制造包括衬底的纳米线存储器件的方法中; 形成在基板上并与基板绝缘的电极; 和一个纳米线，其一端与电极连接并以给定的长度形成，该方法包括：在基片上形成与电极配对的电极和虚拟电极; 在测量电极和虚拟电极之间的电流的同时，在电极和虚拟电极之间形成纳米线，并且当所测量的电流为给定值时，切割施加在电极和虚拟电极之间的功率; 并去除虚拟电极。