公开(公告)号：US20170090298A1

公开(公告)日：2017-03-30

申请号：US15221600

申请日：2016-07-28

Applicant: ADVANTEST CORPORATION

Inventor： Shoji KOJIMA ,  Akio YAMADA ,  Masahiro SEYAMA

IPC: G03F7/20

CPC classification number: G03F7/7055 ,  G03F7/2059 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/304

Abstract: Provided is an exposure apparatus that exposes a pattern on a sample, the exposure apparatus including a plurality of blanking electrodes that are provided corresponding to a plurality of charged particle beams and each switch whether the corresponding particle beam irradiates the sample according to an input voltage; an irradiation control section that outputs switching signals for switching blanking voltages supplied respectively to the blanking electrodes; and a measuring section that, for each blanking electrode, measures a delay amount that is from when the switching signal changes to when the blanking voltage changes.

公开(公告)号：US09530616B2

公开(公告)日：2016-12-27

申请号：US14857095

申请日：2015-09-17

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Yamashita ,  Hiroshi Matsumoto ,  Kazuhiro Chiba

IPC: G21K5/04 ,  H01J37/317

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31774

Abstract: In one embodiment, a blanking aperture array includes a substrate including an upper surface on which an insulating film is provided, a plurality of blanking aperture portions provided in the substrate, each of the plurality of blanking aperture portions including one of penetration holes, through which a predetermined beam passes, and one of blanking electrodes and one of ground electrodes which are provided on the insulating film, and the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam, and a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film.

Abstract translation: 在一个实施例中，消隐孔阵列包括：衬底，其包括设置绝缘膜的上表面;设置在衬底中的多个消隐孔部，多个消隐孔部分中的每一个包括一个穿透孔， 预定的光束通过，并且设置在绝缘膜上的消隐电极和接地电极之一以及被配置为执行预定光束的消隐偏转的消隐电极和接地电极以及设置为如下的高电阻膜 覆盖绝缘膜和至少一部分接地电极，高电阻膜具有高于接地电极的电阻并低于绝缘膜的电阻的电阻。

公开(公告)号：US09530615B2

公开(公告)日：2016-12-27

申请号：US13955852

申请日：2013-07-31

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Peter F. Kurunczi ,  Neil J. Bassom ,  Wilhelm P. Platow

IPC: H01J37/30 ,  H01J37/04 ,  B08B7/00 ,  H01J27/02 ,  H01J37/02 ,  H01J37/08

CPC classification number: H01J37/3002 ,  B08B7/0021 ,  H01J27/024 ,  H01J37/02 ,  H01J37/045 ,  H01J37/08 ,  H01J2237/022

Abstract: A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion source chamber may be biased to a first positive voltage, while the suppression electrode is biased to a negative voltage to attract positive ions from within the chamber through an aperture and toward the workpiece. In the cleaning mode, the ion source chamber may be grounded, while the suppression electrode is biased using a power supply having a high current capability. The voltage applied to the suppression electrode creates a plasma between the suppression electrode and the ion source chamber, and between the suppression electrode and the ground electrode.

Abstract translation: 公开了改进离子源的性能和延长寿命的系统和方法。 离子源包括离子源室，抑制电极和接地电极。 在处理模式中，离子源室可以被偏置到第一正电压，而抑制电极被偏压到负电压，以通过孔径朝向工件吸引室内的正离子。 在清洁模式中，离子源室可以接地，而使用具有高电流能力的电源对抑制电极进行偏置。 施加到抑制电极的电压在抑制电极和离子源室之间以及在抑制电极和接地电极之间产生等离子体。

公开(公告)号：US09520268B2

公开(公告)日：2016-12-13

申请号：US14795535

申请日：2015-07-09

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer

IPC: G21K5/04 ,  H01J37/317 ,  H01J37/302 ,  G06F17/50 ,  H01J37/09 ,  H01J37/04

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract translation: 计算曝光图案以在带电粒子多光束处理装置中的目标上曝光期望图案以匹配参考写入工具，和/或用于从图案定义装置将图像偏离从图案定义装置补偿到目标上 在目标图像区域中至少沿一个方向的临界尺寸的期望值：所需图案作为适合参考工具的图形表示，在目标上的图像区域上提供。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

公开(公告)号：US20160322199A1

公开(公告)日：2016-11-03

申请号：US15207150

申请日：2016-07-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： SHIH-CHI WANG ,  TSUNG-CHIH CHIEN ,  HUI-MIN HUANG ,  JAW-JUNG SHIN ,  SHY-JAY LIN ,  BURN JENG LIN

IPC: H01J37/317 ,  H01J37/12 ,  H01J37/20 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/10 ,  H01J37/12 ,  H01J37/20 ,  H01J2237/0435 ,  H01J2237/1205

Abstract: A charged particle multi-beam lithography system includes an illumination sub-system that is configured to generate a charged particle beam; and multiple plates with a first aperture through the plates. The plates and the first aperture are configured to form a charged particle doublet. The system further includes a blanker having a second aperture whose footprint is smaller than that of the first aperture. The charged particle doublet is configured to demagnify a portion of the charged particle beam passing through the first aperture, thereby producing a demagnified beamlet. The blanker is configured to receive the demagnified beamlet from the charged particle doublet, and is further configured to conditionally allow the demagnified beamlet to travel along a desired path.

Abstract translation: 带电粒子多光束光刻系统包括被配置为产生带电粒子束的照明子系统; 以及具有穿过板的第一孔的多个板。 板和第一孔被构造成形成带电粒子的双峰。 该系统还包括具有第二孔径的消隐器，该第二孔口的占地面积小于第一孔径。 带电粒子双重体被配置成使通过第一孔的带电粒子束的一部分缩小，由此产生缩小的子束。 消隐器被配置为从带电粒子二重体接收缩小的子束，并且还被配置为有条件地允许缩小的子束沿着期望的路径行进。

公开(公告)号：US09443699B2

公开(公告)日：2016-09-13

申请号：US14694959

申请日：2015-04-23

Applicant: IMS Nanofabrication AG

Inventor： Elmar Platzgummer ,  Hans Löschner

IPC: H01J37/317 ,  H01J37/09 ,  H01J37/04 ,  H01J37/147

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/0435

Abstract: In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns, each column has a beam shaping device forming the shape of the illuminating beam into a desired pattern composed of a multitude of sub-beams, by means of an aperture array device, which defines the shape of a respective sub-beam by means of an array of apertures, and a deflection array device selectively deflecting sub-beams off their nominal paths; thus, only the non-selected sub-beams can reach the target. According to many embodiments of the invention each beam shaping device is provided with a first field-boundary device and a second field-boundary device, which are the first and last plate elements traversed by the beam. One of the first and second field-boundary devices defines a field-free space interval so as to accommodate feeding lines for controlling the deflection array device.

Abstract translation: 在用多个平行粒子光学柱曝光靶的带电粒子多光束处理装置中，每列具有将照明光束的形状形成为由多个子像素组成的期望图案的光束整形装置， 通过孔阵列器件，其通过孔阵列限定相应子光束的形状，并且偏转阵列器件选择性地使子光束偏离其标称通路; 因此，只有未选择的子光束才能到达目标。 根据本发明的许多实施例，每个光束整形装置设置有第一场边界装置和第​​二场边界装置，第一场边界装置和第​​二场边界装置是由横梁穿过的第一和最后的板件。 第一和第二场边界装置之一限定了无场空间间隔，以适应用于控制偏转阵列装置的馈线。

公开(公告)号：US20160233052A1

公开(公告)日：2016-08-11

申请号：US14956860

申请日：2015-12-02

Applicant: NuFlare Technology, Inc.

Inventor： Satoru HIROSE ,  Takayuki OHNISHI

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/045 ,  H01J37/147 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/3045 ,  H01J2237/31776

Abstract: In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating the apparatus includes making a shot of a first pattern, controlling a deflection amount by the deflector to move an applied position of the beam from the first pattern along a first direction to make a shot of a second pattern, controlling the deflection amount to move the applied position from the second pattern along the first direction to make a shot of a third pattern, controlling the deflection amount to move the applied position from the third pattern along a second direction opposite to the first direction to make a shot of a fourth pattern between the second pattern and the third pattern, calculating an interval between the second pattern and the fourth pattern, and comparing the calculated interval to a reference interval.

公开(公告)号：US20160189930A1

公开(公告)日：2016-06-30

申请号：US14883634

申请日：2015-10-15

Applicant: ADVANTEST CORPORATION

Inventor： Akio YAMADA ,  Shinji SUGATANI ,  Masaki KUROKAWA ,  Masahiro SEYAMA

IPC: H01J37/317

CPC classification number: H01J37/3174 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/31761 ,  H01J2237/31766 ,  H01J2237/31774

Abstract: To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

Abstract translation: 为了通过组合光学曝光技术和带电粒子束曝光技术来形成复杂和精细图案，提供了一种曝光装置，其在与样品上的线图案相对应的位置处辐射带电粒子束，包括生成 在线图案的宽度方向上的不同照射位置处的多个带电粒子束; 扫描控制部，其沿着所述线条图案的长度方向对所述带电粒子束的照射位置进行扫描; 选择部，其选择至少一个带电粒子束，以在所述多个带电粒子束中沿所述线图案的长度方向的指定的照射位置照射所述样本; 以及照射控制部，其控制所述至少一个所选择的带电粒子束照射所述样品。

公开(公告)号：US20160161849A1

公开(公告)日：2016-06-09

申请号：US15041871

申请日：2016-02-11

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi MATSUMOTO

IPC: G03F7/20

CPC classification number: G03F7/2059 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31761 ,  H01J2237/31793

Abstract: A multi charged particle beam writing apparatus according to one aspect of the present invention includes a plurality of first blankers to respectively perform blanking deflection of a corresponding beam in multiple beams having passed through the plurality of openings of the aperture member, a plurality of second blankers to deflect a defective beam in the multiple beams having passed through the plurality of openings of the aperture member to be in a direction orthogonal to a deflection direction of the plurality of first blankers, a blanking aperture member to block each of beams which were deflected to be in a beam off state by at least one of the plurality of first blankers and the plurality of second blankers, and a detection processing unit to detect a defective beam in the multiple beams having passed through the plurality of openings of the aperture member.

公开(公告)号：US20160148784A1

公开(公告)日：2016-05-26

申请号：US14614756

申请日：2015-02-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： SHAO-YU LI ,  TSUNG-HSIN YU

IPC: H01J37/302 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J2237/0432 ,  H01J2237/31789

Abstract: The present disclosure provides a method for operating a dynamic pattern generator (DPG) having a mirror array. The method comprises receiving a clock signal, determining a time delay based on the period of the clock signal, determining a first clock signal for toggling a first group of mirror cells in the mirror array, determining a second clock signal, lagging behind the first clock signal by the time delay, for toggling a second group of mirror cells in the mirror array, toggling the first group of mirror cells in the mirror array in response to the first clock signal, and toggling the second group of the mirror cells in the mirror array in response to the second clock signal.

Abstract translation: 本公开提供了一种用于操作具有反射镜阵列的动态图案发生器（DPG）的方法。 该方法包括接收时钟信号，基于时钟信号的周期来确定时间延迟，确定第一时钟信号以切换反射镜阵列中的第一组镜像单元，确定第二时钟信号落在第一时钟之后 信号通过时间延迟，用于切换反射镜阵列中的第二组镜像单元，响应于第一时钟信号切换反射镜阵列中的第一组镜像单元，并且在镜中切换第二组镜像单元 阵列响应于第二个时钟信号。