公开(公告)号：US09728375B2

公开(公告)日：2017-08-08

申请号：US15004143

申请日：2016-01-22

Applicant: FEI Company

Inventor： Jorgen Rasmussen ,  Kevin C. Malinak

IPC: H01J37/30 ,  H01J37/02 ,  H01J37/16 ,  F16K11/07 ,  B05B1/00 ,  B05B1/30

CPC classification number: H01J37/3002 ,  B05B1/005 ,  B05B1/30 ,  F16K11/0716 ,  H01J37/02 ,  H01J37/023 ,  H01J37/16 ,  H01J2237/006 ,  H01J2237/317

Abstract: A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber.

公开(公告)号：US09721752B2

公开(公告)日：2017-08-01

申请号：US14912553

申请日：2014-05-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasuhira Nagakubo ,  Isao Nagaoki ,  Hiroaki Matsumoto ,  Takeshi Sato

IPC: H01J37/00 ,  H01J37/20 ,  H01J37/18 ,  H01J37/285 ,  G01N23/22 ,  H01M8/04664

CPC classification number: H01J37/20 ,  G01N23/22 ,  G01N23/2204 ,  H01J37/18 ,  H01J37/285 ,  H01J2237/006 ,  H01J2237/188 ,  H01J2237/2003 ,  H01J2237/2802 ,  H01J2237/2806 ,  H01M8/04671

Abstract: The objective of the present invention is to maintain the surrounding of a sample at atmospheric pressure and efficiently detect secondary electrons. In a sample chamber of a charged particle device, a sample holder (4) has: a gas introduction pipe and a gas evacuation pipe for controlling the vicinity of a sample (20) to be an atmospheric pressure environment; a charged particle passage hole (18) and a micro-orifice (18) enabling detection of secondary electrons (15) emitted from the sample (20), co-located above the sample (20); and a charged particle passage hole (19) with a hole diameter larger than the micro-orifice (18) above the sample (20) so as to be capable of actively evacuating gas during gas introduction.

公开(公告)号：US09627174B2

公开(公告)日：2017-04-18

申请号：US14973424

申请日：2015-12-17

Applicant: FEI Company

Inventor： Gregory A. Schwind ,  N. William Parker

IPC: H01J37/08 ,  H01J37/21 ,  H01J27/20

CPC classification number: H01J37/21 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/31749

Abstract: A high brightness ion source with a gas chamber includes multiple channels, wherein the multiple channels each have a different gas. An electron beam is passed through one of the channels to provide ions of a certain species for processing a sample. The ion species can be rapidly changed by directing the electrons into another channel with a different gas species and processing a sample with ions of a second species. Deflection plates are used to align the electron beam into the gas chamber, thereby allowing the gas species in the focused ion beam to be switched quickly.

公开(公告)号：US09570271B2

公开(公告)日：2017-02-14

申请号：US14635413

申请日：2015-03-02

Applicant: Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

Inventor： Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  C01B3/00 ,  H01J27/22 ,  H01J37/08 ,  H01J37/32458 ,  H01J37/32807 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/3365 ,  Y02E60/324

Abstract: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统及其方法。 硼离子注入工艺涉及使用特定浓度范围的B2H6，BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。

公开(公告)号：US09548181B2

公开(公告)日：2017-01-17

申请号：US14982544

申请日：2015-12-29

Applicant: Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

Inventor： Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

IPC: H01J37/317 ,  H01J27/22 ,  H01J37/08

CPC classification number: H01J37/3171 ,  C01B3/00 ,  H01J27/22 ,  H01J37/08 ,  H01J37/32458 ,  H01J37/32807 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/3365 ,  Y02E60/324

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。

公开(公告)号：US20160293380A1

公开(公告)日：2016-10-06

申请号：US14674558

申请日：2015-03-31

Applicant: FEI Company

Inventor： Aiden Martin ,  Geoff McCredie ,  Milos Toth

IPC: H01J37/32 ,  H01J37/30

CPC classification number: H01J37/32 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/2003 ,  H01J2237/24445 ,  H01J2237/30472 ,  H01J2237/317

Abstract: A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.

Abstract translation: 提供冷阱以减少在使用工艺气体的操作期间与梁发生反应的污染气体。 冷阱设置为冷凝污染气体但不会使工艺气体冷凝的温度。 冷阱可用于样品室和气体管线中。

公开(公告)号：US09401261B2

公开(公告)日：2016-07-26

申请号：US14852699

申请日：2015-09-14

Applicant: NuFlare Technology, Inc.

Inventor： Yasuyuki Taneda ,  Yoshiro Yamanaka

IPC: H01J37/30 ,  B01J19/08 ,  H01J37/317 ,  H01J37/04 ,  H01J37/147

CPC classification number: H01J37/3002 ,  B01J19/087 ,  B01J2219/0801 ,  B01J2219/085 ,  B01J2219/0869 ,  B01J2219/0875 ,  C01B13/10 ,  H01J37/045 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/006 ,  H01J2237/043 ,  H01J2237/15

Abstract: An ozone supplying apparatus according to an embodiment of the present invention is an ozone gas supplying apparatus which supplies an ozone gas to a vacuum apparatus. The ozone supplying apparatus includes an ozone generator configured to generate the ozone gas, a first flow controller configured to control a flow rate of the ozone gas generated by the ozone generator, a second flow controller configured to control a flow rate of the ozone gas supplied to the vacuum apparatus, and a main pipe provided on a secondary side of the first flow controller and on a primary side of the second flow controller, with the ozone gas being introduced into the main pipe at such a flow rate that an internal pressure of the main pipe is controlled to be lower than atmospheric pressure by the first flow controller.

Abstract translation: 根据本发明的实施方式的臭氧供给装置是向真空装置供给臭氧气体的臭氧气体供给装置。 所述臭氧供给装置具备构成为产生所述臭氧气体的臭氧发生器，构成为控制由所述臭氧发生器产生的臭氧气体的流量的第一流量控制器，构成为控制供给的臭氧气体的流量的第二流量控制器 以及设置在第一流量控制器的次级侧和第二流量控制器的初级侧上的主管，其中臭氧气体以这样的流量被引入到主管中， 主管由第一流量控制器控制为低于大气压力。

公开(公告)号：US20160211109A1

公开(公告)日：2016-07-21

申请号：US14912553

申请日：2014-05-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuhira NAGAKUBO ,  Isao NAGAOKI ,  Hiroaki MATSUMOTO ,  Takeshi SATO

IPC: H01J37/20 ,  H01J37/285 ,  H01J37/18

CPC classification number: H01J37/20 ,  G01N23/22 ,  G01N23/2204 ,  H01J37/18 ,  H01J37/285 ,  H01J2237/006 ,  H01J2237/188 ,  H01J2237/2003 ,  H01J2237/2802 ,  H01J2237/2806 ,  H01M8/04671

Abstract: The objective of the present invention is to maintain the surrounding of a sample at atmospheric pressure and efficiently detect secondary electrons. In a sample chamber of a charged particle device, a sample holder (4) has: a gas introduction pipe and a gas evacuation pipe for controlling the vicinity of a sample (20) to be an atmospheric pressure environment; a charged particle passage hole (18) and a micro-orifice (18) enabling detection of secondary electrons (15) emitted from the sample (20), co-located above the sample (20); and a charged particle passage hole (19) with a hole diameter larger than the micro-orifice (18) above the sample (20) so as to be capable of actively evacuating gas during gas introduction.

Abstract translation: 本发明的目的是将样品的周围保持在大气压下并有效地检测二次电子。 在带电粒子装置的样本室中，样本保持器（4）具有：气体导入管和用于将样品（20）附近控制为大气压环境的排气管; 带电粒子通孔（18）和微孔（18），其能够检测从样品（20）发射的二次电子（15），共同位于样品（20）上方。 以及孔径大于样品（20）上方的微孔（18）的带电粒子通道孔（19），以便能够在气体引入期间主动排出气体。

公开(公告)号：US20160155607A1

公开(公告)日：2016-06-02

申请号：US15004143

申请日：2016-01-22

Applicant: FEI Company

Inventor： Jorgen Rasmussen ,  Kevin C. Malinak

IPC: H01J37/30 ,  B05B1/30 ,  H01J37/02 ,  B05B1/00

CPC classification number: H01J37/3002 ,  B05B1/005 ,  B05B1/30 ,  F16K11/0716 ,  H01J37/02 ,  H01J37/023 ,  H01J37/16 ,  H01J2237/006 ,  H01J2237/317

Abstract: A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber.

Abstract translation: 多位置阀用于控制来自多个气源的气流的目的地。 在一个阀位置，气体流到隔离的真空系统，其中可以在引入样品真空室之前调节流速和混合物。 在另一个阀门位置，预混合气体从隔离的真空室流出并通过针头进入样品真空室。

公开(公告)号：US09343259B2

公开(公告)日：2016-05-17

申请号：US14815265

申请日：2015-07-31

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Avrum Freytsis ,  Robert K. Becker

IPC: H01J37/08 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。