Method for producing an integrated device
    23.
    发明授权
    Method for producing an integrated device 有权
    集成装置的制造方法

    公开(公告)号:US08201325B2

    公开(公告)日:2012-06-19

    申请号:US12275276

    申请日:2008-11-21

    Abstract: A method for producing an integrated device. A source substrate is provided, the source substrate carrying one or more components to be attached to a receiver surface having a uneven topography. The source substrate includes a deformable layer on a surface on which the one or more components are carried. The source substrate is aligned such that said one or more components carried thereon are associated with contact areas of the receiver surface. The source substrate and the receiver surface are moved towards each other such that the one or more components are brought into contact with the contact areas wherein the deformable layer is at least partially deformed. The source substrate is removed such that the one or more of the components remain located on the contact areas of the receiver surface.

    Abstract translation: 一种集成装置的制造方法。 提供源极衬底,源极衬底承载要附着到具有不平坦的形貌的接收器表面的一个或多个部件。 源极基板在其上承载有一个或多个部件的表面上包括可变形层。 源极衬底被对准,使得其上承载的所述一个或多个部件与接收器表面的接触区域相关联。 源极基板和接收器表面朝向彼此移动,使得一个或多个部件与可变形层至少部分变形的接触区域接触。 去除源极衬底,使得一个或多个部件保持位于接收器表面的接触区域上。

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