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21.发明授权Semiconductor arrangement comprising transmission line surrounded by magnetic layer 有权包括由磁性层包围的传输线的半导体装置公开(公告)号：US09379069B2
公开(公告)日：2016-06-28
申请号：US14261473
申请日：2014-04-25
发明人： Huan-Neng Chen , Jun-De Jin , Shuo-Mao Chen , Chewn-Pu Jou
IPC分类号： H01L29/40 , H01L23/66 , H01L21/768 , H01L23/522
CPC分类号： H01L23/66 , H01L21/76879 , H01L21/76883 , H01L23/5227 , H01L2223/6611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer surrounding a first transmission line and a magnetic layer surrounding the first dielectric layer. The magnetic layer increases the inductance of the transmission line. The semiconductor arrangement having the magnetic layer surrounding the first transmission line has increased impedance, which promotes current flow through the transmission line, without having increased resistance as compared to a semiconductor arrangement that does not have a magnetic layer. Increased resistance requires increased power, which results in a shorter semiconductor arrangement life span than the semiconductor arrangement without the increased resistance.
摘要翻译： 提供了半导体布置。 半导体装置包括围绕第一传输线的第一介电层和围绕第一介电层的磁性层。 磁性层增加传输线的电感。 与不具有磁性层的半导体装置相比，具有包围第一传输线的磁性层的半导体装置具有增加的阻抗，其促进电流流过传输线，而不增加电阻。 增加的电阻需要增加的功率，这导致半导体布置寿命比半导体布置更短，而没有增加的电阻。
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公开(公告)号：US20150371772A1
公开(公告)日：2015-12-24
申请号：US14840410
申请日：2015-08-31
发明人： Chewn-Pu Jou , Chuei-Tang Wang , Fu-Lung Hsueh
IPC分类号： H01F41/02
CPC分类号： H01L24/19 , H01F17/0033 , H01F41/046 , H01L23/3128 , H01L23/645 , H01L25/16 , H01L2224/12105 , H01L2224/24195 , H01L2924/14 , H01L2924/19042 , H01L2924/19105 , H01L2924/30107 , Y10T29/4902
摘要： Among other things, a method for forming an inductor is provided. The method includes forming an insulating layer on a carrier. The method includes forming a trench in the insulating layer. The method also includes forming a magnetic structure within the trench. The method includes forming a conductive trace around the magnetic structure to form the inductor.
摘要翻译： 其中，提供了形成电感器的方法。 该方法包括在载体上形成绝缘层。 该方法包括在绝缘层中形成沟槽。 该方法还包括在沟槽内形成磁结构。 该方法包括在磁性结构周围形成导电迹线以形成电感器。
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23.发明授权Phase locked loop (PLL) with multi-phase time-to-digital converter (TDC) 有权具有多相时钟数字转换器（TDC）的锁相环（PLL）公开(公告)号：US08884670B2
公开(公告)日：2014-11-11
申请号：US14088677
申请日：2013-11-25
发明人： Kuang-Kai Yen , Feng Wei Kuo , Huan-Neng Chen , Lee Tsung Hsiung , Hsien-Yuan Liao , Robert Bogdan Staszewski , Chewn-Pu Jou
CPC分类号： H03M1/50 , H03L7/08 , H03L7/085 , H03L7/0992
摘要： One or more techniques or systems for locking a phase locked loop (PLL) are provided herein. In some embodiments, a multi-phase time-to-digital converter (TDC) includes a first phase finder, a phase predictor, a second phase finder, and a phase switch. For example, the first phase finder is configured to generate a first fractional phase signal based on a multi-phase variable clock (CKV) signal. For example, the phase predictor is configured to generate a phase select (QSEL) signal or a multi-phase CKV select (CKVSEL) signal based on a frequency command word (FCW) signal or the multi-phase CKV signal. For example, the second phase finder is configured to generate a second fractional phase signal based on the CKVSEL signal or the QSEL signal. For example, the phase switch is configured to select the first or second fractional phase signal based on a phase error (PHE) signal.
摘要翻译： 本文提供了用于锁定锁相环（PLL）的一种或多种技术或系统。 在一些实施例中，多相时间 - 数字转换器（TDC）包括第一取样器，相位预测器，第二相位取样器和相位开关。 例如，第一相位取样器被配置为基于多相可变时钟（CKV）信号产生第一分数相位信号。 例如，相位预测器被配置为基于频率指令字（FCW）信号或多相CKV信号产生相位选择（QSEL）信号或多相CKV选择（CKVSEL）信号。 例如，第二取景器被配置为基于CKVSEL信号或QSEL信号产生第二分数相位信号。 例如，相位开关被配置为基于相位误差（PHE）信号来选择第一或第二分数相位信号。
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公开(公告)号：US20140266419A1
公开(公告)日：2014-09-18
申请号：US13972217
申请日：2013-08-21
发明人： Jun-De Jin , Tzu-Jin Yeh , Chewn-Pu Jou
IPC分类号： H03K17/687
CPC分类号： H03K17/6871 , H01L27/0266 , H02H9/041 , H02H9/043 , H02H9/046 , H03K17/693
摘要： One or more systems and techniques for limiting a voltage potential between an antenna and a radio-frequency switch circuit are provided. A voltage controller comprises a voltage generator, a voltage detection circuit and a switch cell. The voltage detection circuit is coupled to the voltage generator and to the switch cell, and the switch cell is coupled to a voltage source, and to a node between the radio-frequency switch circuit and the antenna. When the voltage potential exceeds a specified threshold, the voltage generator produces a voltage which the voltage detection circuit measures such that the voltage detection circuit activates the switch cell, resulting in a short circuit between the radio-frequency switch circuit and the voltage source. This serves to inhibit the voltage potential from exceeding the specified threshold, for example.
摘要翻译： 提供了一种用于限制天线和射频开关电路之间的电压电位的系统和技术。 电压控制器包括电压发生器，电压检测电路和开关单元。 电压检测电路耦合到电压发生器和开关单元，并且开关单元耦合到电压源，并耦合到射频开关电路和天线之间的节点。 当电压电压超过规定的阈值时，电压发生器产生电压检测电路测量的电压，使得电压检测电路激活开关单元，导致射频开关电路和电压源之间的短路。 例如，这用于抑制电压电位超过规定的阈值。
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公开(公告)号：US20140265632A1
公开(公告)日：2014-09-18
申请号：US14046951
申请日：2013-10-05
IPC分类号： H02H7/16
CPC分类号： H02H7/16 , Y10T307/766
摘要： One or more systems and techniques for managing one or more electronic devices are provided. A determination is made that a first capacitor in a set of one or more capacitors has a defect. Responsive to the determination, the first capacitor is disabled, and a second capacitor is enabled.
摘要翻译： 提供了一种或多种用于管理一个或多个电子设备的系统和技术。 确定一组或多个电容器中的第一电容器具有缺陷。 响应于确定，第一电容器被禁用，并且第二电容器被使能。
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公开(公告)号：US12018981B2
公开(公告)日：2024-06-25
申请号：US18202703
申请日：2023-05-26
发明人： Chewn-Pu Jou , Feng Wei Kuo , Huan-Neng Chen , Lan-Chou Cho
CPC分类号： G01J1/0422 , G01J1/0474 , G01J1/4228 , G01J1/44 , G02B6/4206
摘要： A device includes a scattering structure and a collection structure. The scattering structure is arranged to concurrently scatter incident electromagnetic radiation along a first scattering axis and along a second scattering axis. The first scattering axis and the second scattering axis are non-orthogonal. The collection structure includes a first input port aligned with the first scattering axis and a second input port aligned with the second scattering axis. A method includes scattering electromagnetic radiation along a first scattering axis to create first scattered electromagnetic radiation and along a second scattering axis to create second scattered electromagnetic radiation. The first scattering axis and the second scattering axis are non-orthogonal. The first scattered electromagnetic radiation is detected to yield first detected radiation and the second scattered electromagnetic radiation is detected to yield second detected radiation. The first detected radiation is phase aligned with the second detected radiation.
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公开(公告)号：US11703379B2
公开(公告)日：2023-07-18
申请号：US17175961
申请日：2021-02-15
发明人： Chewn-Pu Jou , Feng Wei Kuo , Huan-Neng Chen , Lan-Chou Cho
CPC分类号： G01J1/0422 , G01J1/0474 , G01J1/4228 , G01J1/44 , G02B6/4206
摘要： A device includes a scattering structure and a collection structure. The scattering structure is arranged to concurrently scatter incident electromagnetic radiation along a first scattering axis and along a second scattering axis. The first scattering axis and the second scattering axis are non-orthogonal. The collection structure includes a first input port aligned with the first scattering axis and a second input port aligned with the second scattering axis. A method includes scattering electromagnetic radiation along a first scattering axis to create first scattered electromagnetic radiation and along a second scattering axis to create second scattered electromagnetic radiation. The first scattering axis and the second scattering axis are non-orthogonal. The first scattered electromagnetic radiation is detected to yield first detected radiation and the second scattered electromagnetic radiation is detected to yield second detected radiation. The first detected radiation is phase aligned with the second detected radiation.
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公开(公告)号：US11688685B2
公开(公告)日：2023-06-27
申请号：US17167273
申请日：2021-02-04
发明人： Wen-Shiang Liao , Chih-Hang Tung , Chen-Hua Yu , Chewn-Pu Jou , Feng Wei Kuo
IPC分类号： H01L23/31 , H01L23/64 , H01L23/522 , H01L23/528 , H01L49/02 , H01L23/00 , H01L21/683 , H01L23/66
CPC分类号： H01L23/5227 , H01L21/6835 , H01L23/3114 , H01L23/3128 , H01L23/645 , H01L24/06 , H01L24/24 , H01L28/10 , H01L23/66 , H01L24/19 , H01L24/20 , H01L2221/68345 , H01L2224/02371 , H01L2224/02379 , H01L2224/1412 , H01L2224/18 , H01L2224/24195 , H01L2224/2919 , H01L2224/32225 , H01L2224/18 , H01L2924/0001 , H01L2224/2919 , H01L2924/00014
摘要： Among other things, a method of fabricating an integrated electronic device package is described. First trace portions of an electrically conductive trace are formed on an electrically insulating layer of a package structure, and vias of the conductive trace are formed in a sacrificial layer disposed on the electrically insulating layer. The sacrificial layer is removed, and a die is placed above the electrically insulating layer. Molding material is formed around exposed surfaces of the die and exposed surfaces of the vias, and a magnetic structure is formed within the layer of molding material. Second trace portions of the electrically conductive trace are formed above the molding material and the magnetic structure. The electrically conductive trace and the magnetic structure form an inductor. The electrically conductive trace may have a coil shape surrounding the magnetic structure. The die may be positioned between portions of the inductor.
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公开(公告)号：US20200044680A1
公开(公告)日：2020-02-06
申请号：US16600639
申请日：2019-10-14
发明人： Huan-Neng Chen , Chewn-Pu Jou , Feng-Wei Kuo , Lan-Chou Cho , William Wu Shen
摘要： A transceiver disposed on a first die in a bidirectional differential die-to-die communication system is disclosed. The transceiver includes a transmission section configured to modulate a first data onto a carrier signal having a first frequency for transmission via a bidirectional differential transmission line; and a reception section configured to receive signals from the bidirectional differential transmission line, the reception section including a filter configured to pass frequencies within a first passband that includes a second frequency, the first frequency being outside of the first passband. According to some embodiments, the reception section is configured to receive, via the bidirectional differential transmission line, modulated data at the second frequency at a same time that the transmission section transmits the modulated data at the first frequency.
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公开(公告)号：US20180286984A1
公开(公告)日：2018-10-04
申请号：US15475623
申请日：2017-03-31
发明人： Chewn-Pu Jou
IPC分类号： H01L29/78 , H01L29/10 , H01L29/66 , H01L27/088 , H01L21/326
CPC分类号： H01L29/7851 , H01L21/326 , H01L27/0886 , H01L29/1087 , H01L29/1095 , H01L29/66795
摘要： A semiconductor device comprising a substrate and a transistor comprising a source, drain, and gate formed on the substrate. The semiconductor device further comprises a deep well formed in the substrate at a predetermined distance below the surface of the substrate and a contact configured to electrically couple the deep well to a voltage source such that a voltage can be applied to the deep well to create a substrate depletion region for reducing parasitic capacitance between the transistor and the substrate.
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