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50 条记录 (耗时 0.027 秒)

    Semiconductor memory device and method of programming the same
    22.
    发明授权
    Semiconductor memory device and method of programming the same 有权
    半导体存储器件及其编程方法

    公开(公告)号：US07672154B2

    公开(公告)日：2010-03-02

    申请号：US12073678

    申请日：2008-03-07

    申请人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

    摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

    摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

    Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM
    25.
    发明授权
    Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM 有权
    用于自发厅效应的磁随机存取存储器（MRAM）和使用MRAM写入和读取数据的方法

    公开(公告)号：US06894920B2

    公开(公告)日：2005-05-17

    申请号：US10465602

    申请日：2003-06-20

    申请人： Tae-wan Kim ,  Kee-won Kim ,  Wan-jun Park ,  I-hun Song ,  Sang-jin Park

    发明人： Tae-wan Kim ,  Kee-won Kim ,  Wan-jun Park ,  I-hun Song ,  Sang-jin Park

    IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/18 ,  H01L21/8246 ,  H01L43/06 ,  G11C11/00

    CPC分类号： G11C11/18 ,  G11C11/1675

    摘要： A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

    摘要翻译： 使用热磁自发霍尔效应的磁性RAM（MRAM）包括形成在基板上的MOS晶体管; 形成在所述MOS晶体管的上方并与所述MOS晶体管的源极区连接的加热层; 存储层，具有写入数据的数据写入区域，所述数据写入区域形成在所述加热装置上; 形成在数据写入区上的位线; 形成在位线和存储层上的上绝缘膜; 以及形成在上绝缘膜上的写入线，使得至少在存储层的数据写入区域中产生写入数据所需的磁场。 MRAM使用自发霍尔电压根据存储器层的磁化状态大大不同的事实来写入或读取数据，从而为器件提供高数据感测余量。

    Oscillators and methods of operating the same
    28.
    发明授权
    Oscillators and methods of operating the same 有权
    振荡器和操作方法相同

    公开(公告)号：US08421545B2

    公开(公告)日：2013-04-16

    申请号：US13099684

    申请日：2011-05-03

    申请人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    发明人： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    IPC分类号： H03L7/26 ,  H03B28/00 ,  H01L29/82

    CPC分类号： H03B15/006

    摘要： Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

    摘要翻译： 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。

    Oscillators and methods of manufacturing and operating the same
    29.
    发明申请
    Oscillators and methods of manufacturing and operating the same 有权
    振荡器和制造和操作方法相同

    公开(公告)号：US20120068779A1

    公开(公告)日：2012-03-22

    申请号：US12929932

    申请日：2011-02-25

    申请人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： H03B5/30 ,  H01L43/12

    CPC分类号： H01L43/12 ,  H01L43/08 ,  H03B15/006

    摘要： Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

    摘要翻译： 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。

    Oscillators And Methods Of Operating The Same
    30.
    发明申请
    Oscillators And Methods Of Operating The Same 有权
    振荡器和操作方法相同

    公开(公告)号：US20120056685A1

    公开(公告)日：2012-03-08

    申请号：US13096627

    申请日：2011-04-28

    申请人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： H03B1/00

    CPC分类号： H03B15/006 ,  B82Y25/00

    摘要： An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

    摘要翻译： 提供了振荡器及其操作方法，振荡器可以包括自由层，自由层的第一表面上的钉扎层和自由层的第二表面上的参考层。 自由层可以具有可变的磁化方向。 被钉扎层可以具有钉扎的磁化方向。 参考层可以具有与被钉扎层的磁化方向不平行的磁化方向。