发明授权
- 专利标题： Magnetoresistive elements and memory devices including the same
- 专利标题（中）： 磁阻元件和包括其的存储器件
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申请号： US13591809申请日： 2012-08-22
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公开(公告)号： US08848432B2公开(公告)日： 2014-09-30
- 发明人: Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
- 申请人： Sung-chul Lee , Kwang-seok Kim , Kee-won Kim , Young-man Jang , Ung-hwan Pi
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0139219 20111221
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C11/15 ; H01L43/08
摘要：
Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
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