METHOD OF MANUFACTURING THIN FILM TRANSISTOR,THIN FILM TRANSISTOR MANUFACTURED BY USING THE METHOD, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE METHOD
    21.
    发明申请
    METHOD OF MANUFACTURING THIN FILM TRANSISTOR,THIN FILM TRANSISTOR MANUFACTURED BY USING THE METHOD, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE METHOD 审中-公开
    制造薄膜晶体管的方法,使用该方法制造的薄膜晶体管,制造有机发光显示装置的方法和使用该方法制造的有机发光显示装置

    公开(公告)号:US20140299860A1

    公开(公告)日:2014-10-09

    申请号:US14307980

    申请日:2014-06-18

    Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

    Abstract translation: 制造薄膜晶体管(TFT)的方法包括在基板上形成缓冲层,非晶硅层和绝缘层; 使非晶硅层结晶为多晶硅层; 通过同时构图多晶硅层和绝缘层来形成具有预定形状的半导体层和栅极绝缘层; 通过在栅极绝缘层上形成和图案化金属层,形成包括第一部分和第二部分的栅电极。 第一部分形成在栅极绝缘层上并且与半导体层的沟道区重叠,并且第二部分接触半导体层。 通过掺杂半导体层的区域,在半导体层上形成源极区和漏极区。 该区域排除与栅电极重叠的沟道区域,并构成不与栅电极重叠的区域。 在栅电极上形成层间绝缘层,以覆盖栅极绝缘层; 在层间绝缘层和栅极绝缘层上形成接触孔,露出源极区域和漏极区域,同时形成露出第二部分的开口部。 源电极和漏电极通过在层间绝缘层上图案化导电层而形成。 源电极和漏电极经由接触孔电连接到源极区域和漏极区域,同时去除经由开口露出的第二部分。

    DISPLAY DEVICE
    23.
    发明申请

    公开(公告)号:US20210367000A1

    公开(公告)日:2021-11-25

    申请号:US17324505

    申请日:2021-05-19

    Abstract: A display device includes a display panel including a hole area, a display area around the hole area, and a non-display area around the display area, a first-first insulating layer disposed in the hole area, sensing electrodes disposed on the display area, a crack detection pattern disposed on the first-first insulating layer in the hole area, a crack detection line disposed on the non-display area, and a connection pattern disposed in a first sensing electrode of the sensing electrodes disposed on the display area to be insulated from the sensing electrodes, and connected to the crack detection pattern and the crack detection line, the first sensing electrode being disposed between the hole area and the non-display area. An edge of the first-first insulating layer disposed at a boundary between the display area and the hole area has a step structure of at least two steps.

    Display device
    24.
    发明授权

    公开(公告)号:US11024829B2

    公开(公告)日:2021-06-01

    申请号:US16449672

    申请日:2019-06-24

    Abstract: A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

    DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF REPAIRING THE SAME
    25.
    发明申请
    DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF REPAIRING THE SAME 有权
    显示装置,其制造方法及其修复方法

    公开(公告)号:US20150280169A1

    公开(公告)日:2015-10-01

    申请号:US14505391

    申请日:2014-10-02

    CPC classification number: H01L51/5237 H01L27/3244 H01L27/3258 H01L51/5209

    Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

    Abstract translation: 显示装置包括衬底,衬底上的钝化层,并且包括具有第一厚度的区域和具有小于第一厚度的第二厚度的区域;钝化层上的第一电极,并且包括间隔开的至少两个子电极 通过具有两端的狭缝彼此分开,在第一电极上的发光层和发光层上的第二电极。 狭缝的两端位于具有第二厚度的钝化层的一个区域中。

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