公开(公告)号：US20230165001A1

公开(公告)日：2023-05-25

申请号：US17989061

申请日：2022-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Jooheon KANG ,  Donggeon GU ,  Doyoon KIM ,  Yumin KIM ,  Suseong NOH ,  Changyup PARK ,  Hyunjae SONG ,  Dongho AHN ,  Myunghun WOO

IPC: H10B43/27 ,  H01L23/528 ,  H10B41/10 ,  H10B41/35 ,  H10B41/27 ,  H10B43/10 ,  H10B43/35

CPC classification number: H01L27/11582 ,  H01L23/5283 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.

公开(公告)号：US20210313397A1

公开(公告)日：2021-10-07

申请号：US17019649

申请日：2020-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo LEE ,  Kwangmin PARK ,  Zhe WU

IPC: H01L27/24 ,  H01L45/00

Abstract: A memory device including a first conductive line on a substrate and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction that is perpendicular to the first horizontal direction; and a memory cell between the first conductive line and the second conductive line, the memory cell including a variable resistance memory layer, a buffer resistance layer, and a switch material pattern, extending in a vertical direction that is perpendicular to the first horizontal direction and the second horizontal direction, and having a tapered shape with a decreasing horizontal width along the vertical direction, wherein at least a part of the variable resistance memory layer and at least a part of the buffer resistance layer of the memory cell are at a same vertical level.

公开(公告)号：US20200091234A1

公开(公告)日：2020-03-19

申请号：US16386893

申请日：2019-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo LEE ,  Zhe WU ,  Kyubong JUNG ,  Seung-geun YU ,  Ja Bin LEE

IPC: H01L27/24 ,  H01L45/00

Abstract: A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.

公开(公告)号：US20150142416A1

公开(公告)日：2015-05-21

申请号：US14448297

申请日：2014-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Chanwoo PARK ,  Byungsoo KIM ,  Jiyeon SEO ,  Myunghwan LEE

IPC: G06F17/28

CPC classification number: G06F17/289

Abstract: Disclosed are a method of recognizing a translation situation and performing a translation function, and an electronic device implementing the same. The electronic device recognizes a situation involving translation and automatically performs a translation function, thereby improving user convenience. An electronic device includes an audio module configured to receive and output audio signal, and a processor. A language translation program is executed in response to detecting that an audio signal received through the audio module includes at least a first language and a second language, a portion of the audio signal that is in the second language is translated into the first language, and the translated portion is outputted through the audio module.

Abstract translation: 公开了一种识别翻译情况和执行翻译功能的方法，以及实现该翻译功能的电子设备。 电子设备识别涉及翻译的情况并自动执行翻译功能，从而提高用户便利性。 电子设备包括被配置为接收和输出音频信号的音频模块以及处理器。 响应于检测到通过音频模块接收的音频信号至少包括第一语言和第二语言，执行语言翻译程序，将处于第二语言的音频信号的一部分转换为第一语言，以及 翻译部分通过音频模块输出。

公开(公告)号：US20240065001A1

公开(公告)日：2024-02-22

申请号：US18299403

申请日：2023-04-12

Applicant: SAMSUNG ELECTRONICS CO,LTD.

Inventor： Seyun KIM ,  Jooheon KANG ,  Sunho KIM ,  Yumin KIM ,  Garam PARK ,  Hyunjae SONG ,  Dongho AHN ,  Seungyeul YANG ,  Myunghun WOO ,  Jinwoo LEE

IPC: H10B63/00

CPC classification number: H10B63/845 ,  H10B63/34

Abstract: Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.

公开(公告)号：US20230097159A1

公开(公告)日：2023-03-30

申请号：US17839724

申请日：2022-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Chunyub PARK ,  Sutae KIM

IPC: H01L21/28 ,  H01L21/8234

Abstract: A method of manufacturing a semiconductor device may include forming a hardmask layer on gate lines and intergate insulating portions alternately arranged; respectively forming mandrel lines on regions of the hardmask layer, corresponding to every other one of the intergate insulating portions; conformally forming a spacer material layer, having a thickness corresponding to a width of the gate lines, on the hardmask layer; forming a mandrel material layer on the spacer material layer; removing a portion of the mandrel material layer to expose portions of the spacer material layer on an upper surface and a side surface of the mandrel line; removing the exposed portions of the spacer material layer to provide the mandrel lines and stacked mandrel patterns; and forming an opening in the hardmask layer, which exposes a gate-cut region of the gate lines, using the mandrel lines and the stacked mandrel patterns as a mask.

公开(公告)号：US20150099470A1

公开(公告)日：2015-04-09

申请号：US14509160

申请日：2014-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Jiyeon SEO ,  Myunghwan LEE ,  Yongcheol CHA

IPC: H04W76/02 ,  H04W4/00

CPC classification number: H04W76/14 ,  H04W4/80 ,  H04W8/005

Abstract: Disclosed herein are a method and apparatus for pairing terminals using a sound wave. A sound wave is transmitted from a first terminal to a second terminal and a response is sent by the second terminal and detected by the first terminal. The first terminal and the second terminal are paired based at least partially on the sound wave signal and the response signal.

Abstract translation: 这里公开了一种使用声波配对终端的方法和装置。 声波从第一终端发送到第二终端，并且由第二终端发送响应并由第一终端检测。 至少部分地基于声波信号和响应信号来配对第一终端和第二终端。