-
公开(公告)号：US11057749B2
公开(公告)日：2021-07-06
申请号：US16078483
申请日：2017-02-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongkyu Lee , Hangsuk Huh
IPC: H04W4/14 , H04W88/18 , H04W60/06 , H04W88/14 , H04W92/24 , H04W8/02 , H04W76/19 , H04W8/08 , H04W64/00 , H04W88/02
Abstract: The present disclosure provides a short message service (SMS) in a mobile communication system, to thus guarantee continuity of the SMS service. According to an embodiment of the present disclosure, an operating method of a control node for providing a message service in a mobile communication system includes receiving a message from a user equipment (UE) or a message delivery center, determining an active or inactive state of the message service using a first interface, and if the message service using the first interface is disabled, transmitting detach request information for re-attach of the UE to the UE.
-
公开(公告)号：US20210098686A1
公开(公告)日：2021-04-01
申请号：US16893594
申请日：2020-06-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Dongkyu Lee
Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.
-
公开(公告)号：US10666453B2
公开(公告)日：2020-05-26
申请号：US16143805
申请日：2018-09-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yongwook Kim , Dongkyu Lee
Abstract: An electronic device is disclosed. The electronic device includes: a first communication unit and a second communication unit; a processor; and a memory, wherein the memory includes instructions causing the processor to control the first communication unit to receive first identification information for the door and first opening/closing state information of the door from a server, control the second communication unit to receive second communication unit to receive second door identification information and second opening/closing state information of the door from a door, and identify information on an electronic device involved in a change in an opening/closing state of the door based on the first identification information for the door, the first opening/closing state information of the door, the second door identification information, and the second opening/closing state information of the door. Other various embodiments are possible.
-
公开(公告)号：USD854028S1
公开(公告)日：2019-07-16
申请号：US29618081
申请日：2017-09-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Saegee Oh , Sihak Jang , Jamin Goo , Kiyoung Kwon , Gangheok Kim , Kiwon Kim , Minsoo Kim , Yonguk Kim , Jimin Kim , Chulkwi Kim , Joo Namkung , Seonghoon Yu , Yongju Yu , Dongkyu Lee , Yosub Lee , Imsung Lee , Chanwon Lee
-
公开(公告)号：US20240321960A1
公开(公告)日：2024-09-26
申请号：US18613324
申请日：2024-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinchan Yun , Sungil Park , Jaehyun Park , Dongkyu Lee , Kyuman Hwang
IPC: H01L29/06 , H01L27/092 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786
CPC classification number: H01L29/0673 , H01L27/092 , H01L29/0649 , H01L29/0847 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696
Abstract: A multi-stack semiconductor device includes a substrate, a device isolation layer, first channels, first gate lines covering the first channel, extending in a second horizontal direction, and spaced apart from each other in the first horizontal direction, first source/drain areas arranged on both sides of each of the first channels in the first horizontal direction, a second channel arranged apart from the first gate line in the vertical direction over any one of the first gate lines, a second gate line, second source/drain areas, a third channel arranged apart from the second gate line in the vertical direction over the second gate line, a third gate line, third source/drain areas, and a first lower source/drain contact extending in the vertical direction and connected to each of the first source/drain area, the second source/drain area, and the third source/drain area.
-
Patent Agency Ranking
26.发明公开公开(公告)号：US20230209838A1
公开(公告)日：2023-06-29
申请号：US18171527
申请日：2023-02-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Dongkyu Lee
IPC: H10B61/00 , H01L23/528 , H01F10/32 , G11C11/16 , H10N50/80
CPC classification number: H10B61/00 , H01L23/528 , H01F10/329 , G11C11/161 , H01F10/3254 , H10N50/80
Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.
-
27.发明授权公开(公告)号：US11165728B2
公开(公告)日：2021-11-02
申请号：US16474386
申请日：2017-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Im-Sung Lee , Ki-Won Kim , Sae Gee Oh , Ja-Min Goo , Kiyoung Kwon , Eun-Young Kim , Jimin Kim , Chulkwi Kim , Hyung-Woo Kim , Joo Namkung , Ji-Hyun Park , Seong-Hoon You , Yong-Ju Yu , Dongkyu Lee , Chanwon Lee , Si-Hak Jang
Abstract: Various embodiments of the present disclosure relate to an electronic device and a method for delivering a message by the same. The electronic device may comprise: a camera; at least one processor functionally connected to the camera; a driving circuitry configured to control moving of the electronic device; and a memory for storing at least one program configured to be executable by the at least one processor, wherein the program comprises instructions that are set to: in response to an input of a message from a sender, activate the camera and capture an image of the sender, analyze the image of the sender for an emotion of the sender, analyze the inputted message for a recipient, determine an output pattern based on the image, determine the recipient based on the inputted message, determine whether the determined recipient is located in a vicinity of the electronic device, and in response to the determined recipient not being located in the vicinity of the electronic device, identify a location of the determined recipient and control the driving circuitry to move the electronic device to the identified location.
-
公开(公告)号：US10930702B2
公开(公告)日：2021-02-23
申请号：US16444541
申请日：2019-06-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongkyu Lee
Abstract: A magnetic memory device may include magnetic tunnel junction patterns on a substrate, a conductive line extending between the substrate and the magnetic tunnel junction patterns and in contact with bottom surfaces of the magnetic tunnel junction patterns, and a bottom pattern located between the conductive line and the substrate and in contact with a bottom surface of the conductive line. The material of the conductive line may have a first lattice constant, and the material of the bottom pattern may have a second lattice constant that is less than the first lattice constant of the conductive line. Alternatively or additionally, the bottom pattern includes a metal nitride, and a nitrogen content of the bottom pattern is higher than a metal element content of the metal element.
-
公开(公告)号：US20190057701A1
公开(公告)日：2019-02-21
申请号：US16103195
申请日：2018-08-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yongwook Kim , Jamin Goo , Gangheok Kim , Dongkyu Lee
Abstract: An electronic device and method are disclosed herein. The electronic device implements the method, including: receiving a first speech, and extracting a first text from the received first speech, in response to detecting that extraction of the first text includes errors such that a request associated with the first speech is unprocessable, storing the extracted first text, receiving a second speech and extracting a second text from the received second speech, in response to detecting that the request is processable using the extracted second text, detecting whether a similarity between the first and second texts is greater than a similarity threshold, and whether the second speech is received within a predetermined time duration of receiving the first speech, and when the similarity is greater than the threshold, and the first and second speech signals are received within the time duration, storing the first text in association with the second text.
-
公开(公告)号：US09362397B2
公开(公告)日：2016-06-07
申请号：US14464785
申请日：2014-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Gi Hur , Sangsu Kim , Junggil Yang , Changjae Yang , Dongkyu Lee
CPC classification number: H01L29/7832 , H01L27/1104 , H01L29/12 , H01L29/66484 , H01L29/66787 , H01L29/7831
Abstract: A gate-all-around (GAA) semiconductor device can include a fin structure that includes alternatingly layered first and second semiconductor patterns. A source region can extend into the alternatingly layered first and second semiconductor patterns and a drain region can extend into the alternatingly layered first and second semiconductor patterns. A gate electrode can extend between the source region and the drain region and surround channel portions of the second semiconductor patterns between the source region and the drain region to define gaps between the source and drain regions. A semiconductor oxide can be on first side walls of the gap that face the source and drain regions and can be absent from at least one of second side walls of the gaps that face the second semiconductor patterns. A gate insulating layer can be on the first side walls of the gaps between the gate electrode and the semiconductor oxide.
Abstract translation: 栅极全能（GAA）半导体器件可以包括鳍结构，其包括交替分层的第一和第二半导体图案。 源极区域可以延伸到交替层叠的第一和第二半导体图案中，并且漏极区域可以延伸到交替层叠的第一和第二半导体图案中。 栅电极可以在源极区域和漏极区域之间延伸并且围绕源极区域和漏极区域之间的第二半导体图案的通道部分，以限定源极和漏极区域之间的间隙。 半导体氧化物可以位于与源极和漏极区域相对的间隙的第一侧壁上，并且可以不存在面对第二半导体图案的间隙的第二侧壁中的至少一个。 栅极绝缘层可以位于栅电极和半导体氧化物之间的间隙的第一侧壁上。
-
-
-
-
-
-
-
-
-
Search Results
31
records
(took 0.041 seconds)
