公开(公告)号：US09147833B2

公开(公告)日：2015-09-29

申请号：US13935826

申请日：2013-07-05

Applicant: Headway Technologies, Inc.

Inventor： Keyu Pi ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L43/04 ,  H01L27/22 ,  H01L43/14 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining free layer. The HOCL has a lower interface oxide layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during an anneal to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the free layer.

Abstract translation: 公开了一种混合氧化物覆盖层（HOCL）并在磁性隧道结中使用以提高相邻自由层中的热稳定性和垂直磁各向异性。 HOCL具有较低的界面氧化物层和一个或多个过渡金属氧化物层，其中选择形成过渡金属氧化物的金属层中的每一个具有氧化物形成的自由能的绝对值小于用于制备界面的金属的绝对值 氧化层。 一个或多个HOCL层被氧化。 一个或多个过渡金属氧化物层的氧气优选在退火期间迁移到界面氧化物层中以进一步氧化界面氧化物。 结果，需要较小的氧化步骤来最初氧化下部HOCL层并最小化对自由层的氧化损伤。

公开(公告)号：US20150008547A1

公开(公告)日：2015-01-08

申请号：US13935826

申请日：2013-07-05

Applicant: Headway Technologies, Inc.

Inventor： Keyu Pi ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/14

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining free layer. The HOCL has a lower interface oxide layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during an anneal to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the free layer.

Abstract translation: 公开了一种混合氧化物覆盖层（HOCL）并在磁性隧道结中使用以提高相邻自由层中的热稳定性和垂直磁各向异性。 HOCL具有较低的界面氧化物层和一个或多个过渡金属氧化物层，其中选择形成过渡金属氧化物的金属层中的每一个具有氧化物形成的自由能的绝对值小于用于制备界面的金属的绝对值 氧化层。 一个或多个HOCL层被氧化。 一个或多个过渡金属氧化物层的氧气优选在退火期间迁移到界面氧化物层中以进一步氧化界面氧化物。 结果，需要较小的氧化步骤来最初氧化下部HOCL层并最小化对自由层的氧化损伤。

公开(公告)号：US20140306303A1

公开(公告)日：2014-10-16

申请号：US13863545

申请日：2013-04-16

Applicant: Headway Technologies, Inc.

Inventor： Takahiro Moriyama ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic thin film deposition having PMA (perpendicular magnetic anisotropy) is a multilayered fabrication of materials having differing crystal symmetries that smoothly transition by use of a seed layer that promotes symmetry matching. An interface between layers in the deposition, such as an interface between a layer of MgO and an Fe-containing ferromagnetic layer, is a source of perpendicular magnetic anisotropy which then propagates throughout the remainder of the deposition by means of the symmetry matching seed layer.

Abstract translation: 具有PMA（垂直磁各向异性）的磁性薄膜沉积是具有不同晶体对称性的材料的多层制造，其通过使用促进对称性匹配的种子层平滑过渡。 沉积中的层之间的界面，例如MgO层和含Fe铁磁层之间的界面是垂直磁各向异性的源，然后通过对称匹配种子层在整个沉积的其余部分中传播。

公开(公告)号：US11264560B2

公开(公告)日：2022-03-01

申请号：US16448362

申请日：2019-06-21

Applicant: Headway Technologies, Inc.

Inventor： Jodi Mari Iwata ,  Guenole Jan ,  Santiago Serrano Guisan ,  Luc Thomas ,  Ru-Ying Tong

IPC: H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/06 ,  H01F10/32

Abstract: A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ≥1, and resistance×area (RA) product is below 5 ohm-μm2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.

公开(公告)号：US09935261B1

公开(公告)日：2018-04-03

申请号：US15479522

申请日：2017-04-05

Applicant: Headway Technologies, Inc.

Inventor： Sahil Patel ,  Ru-Ying Tong ,  Dongna Shen ,  Yu-Jen Wang ,  Vignesh Sundar

IPC: G11B5/33 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic device for magnetic random access memory (MRAM), spin torque MRAM, or spin torque oscillator technology is disclosed wherein a perpendicularly magnetized magnetic tunnel junction (p-MTJ) with a sidewall is formed between a bottom electrode and a top electrode. A first dielectric layer is 3 to 400 Angstroms thick, and formed on the p-MTJ sidewall with a physical vapor deposition RF sputtering process to establish a thermally stable interface with the p-MTJ up to temperatures around 400° C. during CMOS fabrication. The first dielectric layer may comprise one or more of B, Ge, and alloys thereof, and an oxide, nitride, carbide, oxynitride, or carbonitride. The second dielectric layer is up to 2000 Angstroms thick and may be one or more of SiOYNZ, AlOYNZ, TiOYNZ, SiCYNZ, or MgO where y+z>0.

公开(公告)号：US20170033282A1

公开(公告)日：2017-02-02

申请号：US14813854

申请日：2015-07-30

Applicant: Headway Technologies, Inc.

Inventor： Yu-Jen Wang ,  Keyu Pi ,  Ru-Ying Tong

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02

Abstract: A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers is provided on a bottom electrode in a substrate. The MTJ stack is etched to form a MTJ structure wherein portions of sidewalls of the MTJ structure are damaged by the etching. Thereafter, the substrate is removed from an etching chamber wherein sidewalls of the MTJ structure are oxidized. A physical cleaning of the MTJ structure removes damaged portions and oxidized portions of the MTJ sidewalls. Thereafter, without breaking vacuum, an encapsulation layer is deposited on the MTJ structure and bottom electrode.

Abstract translation: 描述了用于蚀刻磁隧道结（MTJ）结构的方法。 在基板的底部电极上设置一堆MTJ层。 MTJ堆叠被蚀刻以形成MTJ结构，其中MTJ结构的侧壁部分被蚀刻损坏。 此后，从其中MTJ结构的侧壁被氧化的蚀刻室中去除衬底。 MTJ结构的物理清洁消除了MTJ侧壁的损坏部分和氧化部分。 此后，在不破坏真空的情况下，在MTJ结构和底部电极上沉​​积封装层。

公开(公告)号：US09373780B2

公开(公告)日：2016-06-21

申请号：US13955035

申请日：2013-07-31

Applicant: Headway Technologies, Inc.

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01F10/30 ,  H01L29/66 ,  H01F10/32 ,  H01F41/30

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 种子层优选为NiCr，NiFeCr，Hf或其复合物，厚度为10至100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US09331271B2

公开(公告)日：2016-05-03

申请号：US14098604

申请日：2013-12-06

Applicant: Headway Technologies, Inc.

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

IPC: H01L43/12 ,  C23C14/34 ,  G11C11/16 ,  B82Y25/00

CPC classification number: H01L43/12 ,  B82Y25/00 ,  C23C14/3414 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

公开(公告)号：US20160042779A1

公开(公告)日：2016-02-11

申请号：US14886871

申请日：2015-10-19

Applicant: Headway Technologies, Inc.

Inventor： Yu-Jen Wang ,  Guenole Jan ,  Ru-Ying Tong

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  B82Y40/00 ,  G01R33/00 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/65 ,  G11B5/66 ,  G11B2005/0024 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006

Abstract: Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability.

Abstract translation: 公开了合成反铁磁（SAF）和合成亚铁磁（SyF）自由层结构，其减少Ho（对于SAF自由层），​​增加垂直磁各向异性（PMA），并提供高达至少400℃的更高的热稳定性。SAF 并且SyF结构具有FL1 / DL1 / spacer / DL2 / FL2配置，其中FL1和FL2是具有PMA的自由层，耦合层根据厚度在FL1和FL2之间引起反铁磁或亚铁磁耦合，并且DL1和DL2是增强的粉尘层 FL1和FL2之间的耦合。 SAF自由层可以与STT-MRAM存储元件中的SAF参考层或包括自旋转移振荡器的自旋电子器件一起使用。 此外，描述了可以在Ho，PMA和热稳定性方面提供进一步优点的双重SAF结构。

公开(公告)号：US20160020387A1

公开(公告)日：2016-01-21

申请号：US14867047

申请日：2015-09-28

Applicant: Headway Technologies, Inc.

Inventor： Keyu Pi ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A method of forming a hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining free layer. The HOCL has a lower interface oxide layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during annealing to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the free layer.

Abstract translation: 公开了一种形成杂化氧化物覆盖层（HOCL）的方法，并将其用于磁性隧道结中以增强相邻自由层中的热稳定性和垂直磁各向异性。 HOCL具有下界面氧化物层和一个或多个过渡金属氧化物层，其中选择形成过渡金属氧化物的每个金属层具有比用于制备界面的金属的自由能的绝对值小的氧化物形成的绝对值 氧化层。 一个或多个HOCL层被氧化。 来自一个或多个过渡金属氧化物层的氧优选在退火期间迁移到界面氧化物层中以进一步氧化界面氧化物。 结果，需要较小的氧化步骤来最初氧化下部HOCL层并最小化对自由层的氧化损伤。