Invention Application
US20140306303A1 Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
审中-公开
种子层垂直磁各向异性(PMA)薄膜
- Patent Title: Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
- Patent Title (中): 种子层垂直磁各向异性(PMA)薄膜
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Application No.: US13863545Application Date: 2013-04-16
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Publication No.: US20140306303A1Publication Date: 2014-10-16
- Inventor: Takahiro Moriyama , Yu-Jen Wang , Ru-Ying Tong
- Applicant: Headway Technologies, Inc.
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12

Abstract:
A magnetic thin film deposition having PMA (perpendicular magnetic anisotropy) is a multilayered fabrication of materials having differing crystal symmetries that smoothly transition by use of a seed layer that promotes symmetry matching. An interface between layers in the deposition, such as an interface between a layer of MgO and an Fe-containing ferromagnetic layer, is a source of perpendicular magnetic anisotropy which then propagates throughout the remainder of the deposition by means of the symmetry matching seed layer.
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