公开(公告)号：US09337414B2

公开(公告)日：2016-05-10

申请号：US13803362

申请日：2013-03-14

Applicant: Headway Technologies, Inc.

Inventor： Min Li ,  Ruhang Ding ,  Cherng Chyi Han ,  Jianing Zhou ,  Minghui Yu

IPC: G11B5/33 ,  H01L43/10 ,  H01L43/00 ,  H01L29/82 ,  G11B5/127 ,  H01L29/96 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  G11B5/39 ,  H01L43/02 ,  G11B5/31 ,  G01R33/09

CPC classification number: H01L43/08 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  G11B5/3983 ,  H01L43/02 ,  H01L43/12

Abstract: A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer.

Abstract translation: 形成TMR（隧道磁阻）读取传感器，其中包含铁磁自由层和隧道势垒层的传感器堆叠的一部分被图案化以限定窄的轨道宽度，但是合成的反铁磁性钉扎/钉扎层基本上未被图案化地延伸 在基本上沉积的形式中超过限定图案化部分的横向边缘。 图案部分的窄轨道宽度允许高密度记录数据的分辨率。 较大的钉扎/钉扎层显着提高了磁稳定性并降低了热噪声，而形成方法消除了对钉扎/钉扎层边缘的可能的离子束蚀刻（IBE）或反应离子蚀刻（RIE）损伤。

公开(公告)号：US09281469B2

公开(公告)日：2016-03-08

申请号：US14580329

申请日：2014-12-23

Applicant: Headway Technologies, Inc.

Inventor： Junjie Quan ,  Kunliang Zhang ,  Min Li ,  Hui-Chuan Wang

IPC: H01L43/10 ,  H01L43/12 ,  G01R33/09 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: The blocking temperature of the AFM layer in a TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER.

Abstract translation: 通过在AFM层和底部屏蔽之间插入磁性种子层，提高了TMR传感器中AFM层的阻挡温度。 这提供了设备改进的热稳定性，包括改进的SNR和BER。

公开(公告)号：US09214170B2

公开(公告)日：2015-12-15

申请号：US14699121

申请日：2015-04-29

Applicant: Headway Technologies, Inc.

Inventor： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC: G11B5/39

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/12

Abstract: A high performance TMR sensor is fabricated by employing a free layer comprised of CoNiFeB or CoNiFeBM where M is V, Ti, Zr, Nb, Hf, Ta, or Mo and the M content in the alloy is

Abstract translation: 通过采用由CoNiFeB或CoNiFeBM构成的自由层制造高性能TMR传感器，其中M为V，Ti，Zr，Nb，Hf，Ta或Mo，合金中的M含量为<10原子％。 自由层可以具有FeCo / FeB / CoNiFeB，FeCo / CoFe / CoNiFeB，FeCo / CoFeB / CoNiFeB或FeCo / CoNiFeB / CoFeB构型。 可以通过CoNiFeM共溅射CoB来形成CoNiFeBM层。 在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。 CoNiFeB或CoNiFeBM层的磁致伸缩（λ）值介于-5×10-6和5×10-6之间。

公开(公告)号：US09208801B2

公开(公告)日：2015-12-08

申请号：US13645958

申请日：2012-10-05

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: H01F10/32 ,  G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  H01F1/057 ,  G11B5/00

CPC classification number: G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract translation: 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US20150295168A1

公开(公告)日：2015-10-15

申请号：US14748872

申请日：2015-06-24

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Hui-Chuan Wang ,  Junjie Quan ,  Yewhee Chye ,  Min Li

IPC: H01L43/10 ,  G01R33/09 ,  H01L43/08

CPC classification number: H01L43/10 ,  G01R33/093 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.

Abstract translation: 最终形成传感器或MRAM元件的TMR堆叠或GMR堆叠在其铁磁自由层和/或其SyAP钉扎层的AP1层中包括Fe或富铁FeX层的插入层。 X是选自总原子百分数小于50％的Ta，Hf，V，Co，Mo，Zr，Nb或Ti的非磁性金属元素（或元素）。 插入层的厚度在1至10埃之间，优选2至5埃，并且在TMR堆叠中，它们被插入到隧道势垒层和铁磁自由层或隧道势垒层之间的界面附近，以及 TMR堆叠中的Syap钉扎层的AP1层。 插入层限制了CoFeB和NiFe层中B和Ni的相互扩散，并阻止NiFe晶体生长。

公开(公告)号：US09147834B2

公开(公告)日：2015-09-29

申请号：US14244924

申请日：2014-04-04

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: H01L43/02 ,  H01L43/12 ,  G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L43/08 ,  H01F1/40 ,  H01F10/193 ,  H01F10/32 ,  H01L29/82

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.

公开(公告)号：US08988822B2

公开(公告)日：2015-03-24

申请号：US13645947

申请日：2012-10-05

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  G11B5/00

CPC classification number: G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract translation: 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US08921126B2

公开(公告)日：2014-12-30

申请号：US13750401

申请日：2013-01-25

Applicant: Headway Technologies, Inc.

Inventor： Junjie Quan ,  Kunliang Zhang ,  Min Li ,  Hui-Chuan Wang

IPC: H01L21/00

CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A process for manufacturing a TMR sensor is disclosed wherein the blocking temperature of the AFM layer in the TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER.

Abstract translation: 公开了一种用于制造TMR传感器的方法，其中通过在AFM层和底部屏蔽之间插入磁性种子层，已经提高了TMR传感器中AFM层的阻挡温度。 这提供了设备改进的热稳定性，包括改进的SNR和BER。

公开(公告)号：US08817425B1

公开(公告)日：2014-08-26

申请号：US13835966

申请日：2013-03-15

Applicant: Headway Technologies, Inc.

Inventor： Yan Wu ,  Kowang Liu ,  Glen Garfunkel ,  Min Li

IPC: G11B5/33 ,  G11B11/00 ,  G11B5/147

CPC classification number: G11B5/3133 ,  G11B5/3136 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/607

Abstract: A read head structure is disclosed with a dual piece heat sink layer having a front piece formed over a front portion of a dynamic flying height (DFH) element and a back piece above a back portion of the DFH element. A first (S1) shield is formed on the front piece and between the front piece and air bearing surface (ABS). Front and back pieces are separated by an insulator gap. The front piece is used to help control read gap protrusion. As a result, a bottom portion of the S1 shield protrudes to a greater extent than a top portion adjacent to the sensor thereby protecting the sensor from unwanted contact with the magnetic media. The dual piece heat sink layer also enables an improved Figure of Merit in terms of temperature rise in the reader per unit of actuation (nm) delivered by the DFH element.

Abstract translation: 公开了一种读取头结构，其具有在动态飞行高度（DFH）元件的前部上形成的前片和在DFH元件的后部上方的后片的双片散热器层。 第一（S1）屏蔽形成在前片上，前片与空气轴承表面（ABS）之间。 前后片由绝缘体间隙分开。 前片用于帮助控制读取间隙突出。 结果，S1屏蔽件的底部比与传感器相邻的顶部突出得更大，从而防止传感器与磁性介质的不期望的接触。 双片散热器层还能够在DFH元件传送的每单位致动（nm）的阅读器温度上有改善的优点。

公开(公告)号：US20140091055A1

公开(公告)日：2014-04-03

申请号：US14098598

申请日：2013-12-06

Applicant: Headway Technologies, Inc.

Inventor： Yan Wu ,  Zhigang Bai ,  Moris Dovek ,  Cherng-Chyi Yan ,  Min Li ,  Jianing Zhou ,  Jiun-Ting Lee ,  Min Zheng

IPC: G11B5/105

CPC classification number: G11B5/105 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a graded side shield that is conformal to the shape of the pole tip at an upper portion of the shield but not conformal to the pole tip at a lower portion. The shield includes a trailing shield, that is conformal to the trailing edge of the pole tip and may include a leading edge shield that magnetically connects two bottom ends of the graded side shield.

Abstract translation: 垂直磁记录（PMR）头被制造成具有通过分级侧屏蔽横向屏蔽的极尖，该平面侧屏蔽保护层在屏蔽的上部处与极尖的形状保持一致，但在下部不与极尖共形。 屏蔽件包括后挡板，其与电极尖端的后缘保持一致，并且可以包括磁性连接分级侧屏蔽件的两个底端的前缘屏蔽件。