Invention Grant
US09208801B2 CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
有权
用于微波辅助磁记录的具有垂直各向异性的CoFe / Ni多层膜
- Patent Title: CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
- Patent Title (中): 用于微波辅助磁记录的具有垂直各向异性的CoFe / Ni多层膜
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Application No.: US13645958Application Date: 2012-10-05
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Publication No.: US09208801B2Publication Date: 2015-12-08
- Inventor: Kunliang Zhang , Min Li , Yuchen Zhou
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01F10/32
- IPC: H01F10/32 ; G11B5/33 ; B82Y10/00 ; B82Y25/00 ; G01R33/09 ; G01R33/12 ; G11B5/127 ; G11B5/31 ; G11B5/39 ; H01F41/30 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; B82Y40/00 ; H01F1/057 ; G11B5/00

Abstract:
A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
Public/Granted literature
- US20130029035A1 CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording Public/Granted day:2013-01-31
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