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公开(公告)号：US10780553B2
公开(公告)日：2020-09-22
申请号：US15981884
申请日：2018-05-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Lu Wang
Abstract: A vacuum adsorbing workbench and a vacuum adsorbing device are provided. The vacuum adsorbing workbench includes a workbench body, a first suction tube and an occluder. The workbench body is provided with multiple suction holes. Each suction hole is in communication with the first suction tube. The occluder is able to be connected with the first suction tube cooperatively to cut off communication between each suction hole and the first suction tube.
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公开(公告)号：US09941147B2
公开(公告)日：2018-04-10
申请号：US15182953
申请日：2016-06-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xueyong Wang , Qingrong Ren , Lu Wang , Yan Chen
IPC: H01L21/683 , H01L21/67
CPC classification number: H01L21/6838 , H01L21/67288
Abstract: A transfer apparatus includes a supporting member, a free electron excitation device and a detection device; the free electrons excitation device is configured to excite semiconductor material of an object to be transferred to generate free electrons, and the detection device is configured to detect whether material of a surface of the transferred object in contact with the support surface of the supporting member is conductive under excitation by the free electron excitation device. A laser annealing apparatus comprising the transfer apparatus is further provided.
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公开(公告)号：US09620532B2
公开(公告)日：2017-04-11
申请号：US14368145
申请日：2013-05-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L29/08 , H01L29/04 , H01L29/66 , H01L29/78 , H01L27/12 , H01L21/28 , H01L29/788 , H01L29/423 , H01L29/786 , G02F1/133 , G09G3/20 , H01L21/02 , H01L21/265 , H01L21/311 , H01L21/3213 , H01L29/16 , H01L29/417 , H01L29/49 , H01L29/51
CPC classification number: H01L27/1251 , G02F1/13306 , G09G3/2092 , G09G2310/0248 , G09G2310/08 , G09G2320/045 , H01L21/0228 , H01L21/02532 , H01L21/02595 , H01L21/02667 , H01L21/26513 , H01L21/2658 , H01L21/28273 , H01L21/31111 , H01L21/32133 , H01L27/1222 , H01L27/1237 , H01L27/1262 , H01L27/1274 , H01L29/04 , H01L29/16 , H01L29/41733 , H01L29/4175 , H01L29/42324 , H01L29/42384 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66757 , H01L29/66825 , H01L29/78675 , H01L29/788
Abstract: Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (1), and a floating gate electrode (3), a source electrode (4), a drain electrode (5) and a control gate electrode (6) disposed on the substrate (1). The transistor with floating gate electrode further comprises a first insulating film (7) and a polysilicon film (8) that are sequentially disposed on the substrate (1), and a channel region (2) is formed in the polysilicon film (8) at a position corresponding to the floating gate electrode (3).
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24.发明公开公开(公告)号：US20240244900A1
公开(公告)日：2024-07-18
申请号：US18015125
申请日：2022-02-25
Applicant: BOE Technology Group Co., Ltd.
Inventor： Xiaohu Li , Weijie Wang , Liangliang Kang , Zhiqiang Jiao , Lu Wang
IPC: H10K59/131 , H10K59/12 , H10K59/122 , H10K59/80
CPC classification number: H10K59/131 , H10K59/1201 , H10K59/122 , H10K59/8792
Abstract: A display panel includes a plurality of driving base plates stacked, each of the driving base plates includes a substrate and a driving unit located on the substrate, orientations of the driving base plates are the same; a plurality of pixel units arranged in an array, each of the pixel units includes a plurality of sub-pixels, and orthographic projections on the substrate of light emitting regions of the sub-pixels in the same pixel unit do not overlap with each other; and each of the driving base plates is provided with at least one sub-pixel on one side away from the substrate, and the driving unit on each of the driving base plates is electrically connected to the at least one sub-pixel; and a quantity of the driving base plates is less than or equal to a quantity of the sub-pixels in one of the pixel units.
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公开(公告)号：US20190015955A1
公开(公告)日：2019-01-17
申请号：US15981884
申请日：2018-05-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Lu Wang
Abstract: A vacuum adsorbing workbench and a vacuum adsorbing device are provided. The vacuum adsorbing workbench includes a workbench body, a first suction tube and an occluder. The workbench body is provided with multiple suction holes. Each suction hole is in communication with the first suction tube. The occluder is able to be connected with the first suction tube cooperatively to cut off communication between each suction hole and the first suction tube.
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Patent Agency Ranking
26.发明申请DEVICE FOR FILM THICKNESS MEASUREMENT AND METHOD FOR FILM THICKNESS MEASUREMENT 有权薄膜厚度测量装置和薄膜厚度测量方法公开(公告)号：US20170074633A1
公开(公告)日：2017-03-16
申请号：US15122731
申请日：2015-09-15
Applicant: Boe Technology Group Co., Ltd.
Inventor： Jinqian Wang , Lu Wang , Yujun Zhang
Abstract: The embodiments of the invention disclose a device for film thickness measurement and a method for film thickness measurement. The device comprises a planar indenter, a collecting unit and a processing unit. The planar indenter comprises a base plate and a piezoelectric film layer. The collecting unit comprises a plurality of collecting circuits evenly distributed above the piezoelectric film layer and spaced from each other. The collecting circuits are used for collecting current signals generated when the piezoelectric film layer deforms at positions corresponding to the collecting circuits. The processing unit is used for calculating a film thickness of the film sample to be measured based on the current signals collected by each of the collecting circuits.
Abstract translation: 本发明的实施例公开了一种用于膜厚度测量的装置和用于膜厚测量的方法。 该装置包括平面压头，收集单元和处理单元。 平面压头包括基板和压电膜层。 收集单元包括均匀地分布在压电膜层上方并彼此间隔开的多个收集电路。 集电电路用于收集当压电薄膜层在与集电电路相对应的位置变形时产生的电流信号。 处理单元用于基于由每个集电电路收集的电流信号计算要测量的膜样品的膜厚度。
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公开(公告)号：US20250075304A1
公开(公告)日：2025-03-06
申请号：US18562556
申请日：2023-02-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jinxiang Xue , Weijie Wang , Zhongyuan Sun , Fengjie Zhang , Lu Wang
Abstract: The present disclosure provides a silicon-based mask, a manufacturing method, and a display panel. The silicon-based mask includes a first silicon wafer and a second silicon wafer laminated one on another. The first silicon wafer includes a first via hole, the second silicon wafer includes a second via hole, an orthogonal projection of a wall of the first via hole onto the second silicon wafer surrounds the second via hole, and under a same etching condition, an etching rate of the second silicon wafer is smaller than an etching rate of the first silicon wafer.
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公开(公告)号：US20240431143A1
公开(公告)日：2024-12-26
申请号：US17907489
申请日：2021-12-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Xiaohu Li , Lu Wang , Zhiqiang Jiao , Liangliang Kang , Xiaoyun Liu , Peng Wang
IPC: H10K59/122 , H10K59/131 , H10K59/80
Abstract: An array substrate is provided. The array substrate includes a plurality of subpixels. A respective subpixel of the plurality of subpixels includes a first transistor. The first transistor includes a gate electrode; a first electrode on the gate electrode; a semiconductor material layer on a side of the first electrode away from the gate electrode; a second electrode on a side of the semiconductor material layer away from the first electrode; an organic layer on a side of the second electrode away from the semiconductor material layer; and a third electrode on a side of the organic layer away from the second electrode. An orthographic projection of the second electrode on a base substrate at least partially overlaps with an orthographic projection of the organic layer on the base substrate.
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公开(公告)号：US11467487B2
公开(公告)日：2022-10-11
申请号：US16632041
申请日：2019-01-03
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: G03F1/68 , H01L21/033 , H01L21/302 , G03F7/40 , H01S5/02 , G02B5/18 , G03F7/20 , B24B19/02
Abstract: A manufacturing method of a template includes: providing a base; forming a photoresist pattern on the base and patterning the base by using the photoresist pattern as a mask, and the forming the photoresist pattern includes: forming a plurality of first patterns spaced apart from each other on the base; forming a first material layer on the plurality of first patterns; patterning the at least one first pattern by using the first material layer as a mask so that the first pattern is formed into at least one first sub-pattern; and removing the first material layer; and the first material layer at least cover one side of at least one of the plurality of first patterns in a direction perpendicular to a surface on which the base is located.
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公开(公告)号：US10923505B2
公开(公告)日：2021-02-16
申请号：US16535447
申请日：2019-08-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Feng Guan , Lu Wang , Woobong Lee , Jianhua Du , Yang Lv , Zhaohui Qiang , Guangcai Yuan
IPC: H01L27/12
Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.
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