公开(公告)号：US20200161156A1

公开(公告)日：2020-05-21

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu QIAO ,  Qiwei LIANG ,  Viachslav BABAYAN ,  Seshadri RAMASWAMI ,  Srinivas D. NEMANI

IPC: H01L21/683 ,  C23C16/40 ,  C23C16/56

Abstract: Embodiments disclosed herein may include an electrostatic chuck (ESC) carrier. In an embodiment, the ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. In an embodiment, a first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. Embodiments may include a first conductor in the first through substrate opening, and a second conductor in the second through substrate opening. In an embodiment, the ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. In an embodiment, an oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US20190228970A1

公开(公告)日：2019-07-25

申请号：US16371802

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/26 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C01B32/25 ,  H01L21/3213 ,  C23C16/509

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20190119813A1

公开(公告)日：2019-04-25

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Srinivas D. NEMANI ,  Tobin KAUFMAN-OSBORN

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.

公开(公告)号：US20190019681A1

公开(公告)日：2019-01-17

申请号：US15648163

申请日：2017-07-12

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Shiyu SUN ,  Sean S. KANG ,  Nam Sung KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L29/66

Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

公开(公告)号：US20170372899A1

公开(公告)日：2017-12-28

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/26 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/0332 ,  C01B32/25 ,  C23C16/26 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76224

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20170363960A1

公开(公告)日：2017-12-21

申请号：US15692087

申请日：2017-08-31

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20170350004A1

公开(公告)日：2017-12-07

申请号：US15173356

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01L21/67 ,  H01L21/677 ,  H01J37/32 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20160369395A1

公开(公告)日：2016-12-22

申请号：US15184670

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/45563 ,  C23C16/45574

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

Abstract translation: 提供了处理室，其包括侧壁，衬底支撑件和布置在衬底支撑件上方的排气口。 在排气口和衬底支撑件之间形成处理区域，并且排气口与被配置为在排气口处相对于处理区域产生低压的排气装置联接。 处理室还包括气环，该气环包括具有环绕环形区域的内表面的环形体。 气体环还包括多个第一喷嘴，其连接到第一气体源并被配置为将第一气体输送到处理区域。 气体环还包括多个第二喷嘴，其连接到第二气体源并被配置成将第二气体输送到处理区域。

公开(公告)号：US20160357107A1

公开(公告)日：2016-12-08

申请号：US14733923

申请日：2015-06-08

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Sang Ki NAM ,  Viachslav BABAYAN ,  Christine Y OUYANG ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/38 ,  G03F7/70 ,  G03F7/70866

Abstract: Methods disclosed herein provide apparatus and method for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber comprising a substrate support having a substrate supporting surface, a heat source embedded in the substrate support configured to heat a substrate positioned on the substrate supporting surface, an electrode assembly configured to generate an electric field in a direction substantially perpendicular to the substrate supporting surface, wherein the electrode assembly is positioned opposite the substrate supporting surface having a downward surface facing the substrate supporting surface, wherein the electrode assembly is spaced apart from substrate support defining a processing volume between the electrode assembly and the substrate supporting surface, and a confinement ring disposed on an edge of the substrate support or the electrode assembly configured to retain an intermediate medium.

Abstract translation: 本文公开的方法提供了在光刻工艺期间没有气隙介入的情况下将电场和/或磁场施加到光致抗蚀剂层的装置和方法。 在一个实施例中，一种设备包括处理室，该处理室包括具有基板支撑表面的基板支撑件，嵌入在基板支撑件中的热源，该热源构造成加热位于基板支撑表面上的基板;电极组件， 基本上垂直于所述基板支撑表面的方向，其中所述电极组件与所述基板支撑表面相对定位，所述基板支撑表面具有面向所述基板支撑表面的向下表面，其中所述电极组件与限定所述电极组件和 衬底支撑表面以及设置在衬底支撑件的边缘上的限制环或被配置为保持中间介质的电极组件。

公开(公告)号：US20160233100A1

公开(公告)日：2016-08-11

申请号：US14680879

申请日：2015-04-07

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Yin FAN ,  Ellie Y. YIEH ,  Srinivas D. NEMANI

IPC: H01L21/285 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3115

CPC classification number: H01L21/28562 ,  C23C14/04 ,  C23C14/48 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31155 ,  H01L21/76879

Abstract: Methods for selectively depositing different materials at diffe ent locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on on implantation processes may be used to modify materials disposed on the substrate. The ions modify surface properties of the substrate to enable the subsequent selective deposition process. A substrate having a mask disposed thereon may be subjected to an on implantation process to modify the mask and surfaces of the substrate exposed by the mask. The mask may be removed which results in a substrate having regions of implanted and non-implanted materials. A subsequent deposition process may be performed to selectively deposit on either the implanted or non-implanted regions of the substrate.

Abstract translation: 提供了在衬底上的不同位置处选择性地沉积不同材料的方法。 选择性沉积工艺可以在不同的表面上形成不同的材料，例如衬底的不同部分，这取决于在注入工艺上沉积的下层的材料性质可用于修饰设置在衬底上的材料。 离子改变基材的表面性质以使得能够进行随后的选择性沉积工艺。 可以对其上设置有掩模的基板进行在注入工艺以修改由掩模曝光的基板的掩模和表面。 可以去除掩模，这导致具有植入和非植入材料区域的基底。 可以执行随后的沉积工艺以选择性地沉积在衬底的注入或非注入区域上。