公开(公告)号：US20200006036A1

公开(公告)日：2020-01-02

申请号：US16391263

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN

IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

公开(公告)号：US20190221437A1

公开(公告)日：2019-07-18

申请号：US16239170

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01J37/305 ,  H01L21/67

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

公开(公告)号：US20190057862A1

公开(公告)日：2019-02-21

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Eswaranand VENKATASUBRAMANIAN ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20230162996A1

公开(公告)日：2023-05-25

申请号：US18100063

申请日：2023-01-23

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/67 ,  H01L21/311 ,  C23C16/02 ,  C23C16/517 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01L21/31116 ,  C23C16/0245 ,  C23C16/517 ,  H01J37/32091 ,  H01J37/32568 ,  H01J2237/3151 ,  H01J2237/3137

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

公开(公告)号：US20190393053A1

公开(公告)日：2019-12-26

申请号：US16441579

申请日：2019-06-14

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/67 ,  H01L21/311 ,  C23C16/517 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.

公开(公告)号：US20190228970A1

公开(公告)日：2019-07-25

申请号：US16371802

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/26 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  C01B32/25 ,  H01L21/3213 ,  C23C16/509

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US20170372899A1

公开(公告)日：2017-12-28

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Lucy CHEN ,  Jie ZHOU ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Srinivas D. NEMANI ,  Chentsau YING ,  Jingjing LIU ,  Steven LANE ,  Gonzalo MONROY ,  James D. CARDUCCI

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/26 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3213 ,  C23C16/56 ,  H01L21/762

CPC classification number: H01L21/0332 ,  C01B32/25 ,  C23C16/26 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/3266 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76224

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.