公开(公告)号：US12076763B2

公开(公告)日：2024-09-03

申请号：US16007876

申请日：2018-06-13

Applicant: Applied Materials, Inc.

Inventor： Yujia Zhai ,  Lai Zhao ,  Xiangxin Rui ,  Dong-Kil Yim ,  Tae Kyung Won ,  Soo Young Choi

IPC: B08B7/00 ,  B08B9/00 ,  C23C16/44 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  H01L27/12 ,  H01L29/49 ,  H01L49/02

CPC classification number: B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32082 ,  H01L27/1255 ,  H01L29/4908 ,  H01J2237/335 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/68742 ,  H01L28/40

Abstract: In one implementation, a method for cleaning a processing chamber is provided. The method comprises introducing a reactive species into a processing chamber having a residual high-k dielectric material formed on one or more interior surfaces of the processing chamber. The reactive species is formed from a halogen-containing gas mixture and the one or more interior surfaces include at least one surface having a coating material formed thereon. The method further comprises reacting the residual high-k dielectric material with the reactive species to form a volatile product. The method further comprises removing the volatile product from the processing chamber. The removal rate of the residual high-k dielectric material is greater than a removal rate of the coating material. The high-k dielectric material is selected from zirconium dioxide (ZrO2) and hafnium dioxide (HfO2). The coating material includes a compound selected from alumina (Al2O3), yttrium-containing compounds, and combinations thereof.

公开(公告)号：US20240290640A1

公开(公告)日：2024-08-29

申请号：US18659343

申请日：2024-05-09

Applicant: Applied Materials, Inc.

Inventor： Chuang-Chia Lin ,  Wenwei Qiao

IPC: H01L21/67 ,  C23C16/52 ,  G01F15/063 ,  G01F15/14 ,  G01L15/00 ,  G01L19/08 ,  G01L19/14 ,  G01N25/18 ,  H01J37/32

CPC classification number: H01L21/67253 ,  C23C16/52 ,  G01F15/063 ,  G01F15/14 ,  G01L15/00 ,  G01L19/086 ,  G01L19/14 ,  G01N25/18 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/32082 ,  H01J2237/2007 ,  H01J2237/3343 ,  H01L21/67069

Abstract: A sensor system includes a processing chamber and a sensor assembly disposed within the processing chamber. The sensor assembly includes a substrate and a plurality of sensors including at least one of pressure sensors or flow sensors disposed across a surface of the substrate. Each respective sensor is adapted to measure a respective pressure or a respective flow of an environment proximate the respective sensor. The sensor system further includes a processing device communicatively coupled to the sensor assembly. The processing device is adapted to receive at least one of the measured respective pressures or the measured respective flows and determine a pressure distribution or a flow distribution of the processing chamber.

公开(公告)号：US20240271284A1

公开(公告)日：2024-08-15

申请号：US18634376

申请日：2024-04-12

Applicant: Applied Materials, Inc.

Inventor： Kallol BERA ,  Sathya Swaroop GANTA ,  Timothy Joseph FRANKLIN ,  Kaushik ALAYAVALLI ,  Akshay DHANAKSHIRUR ,  Stephen C. GARNER ,  Bhaskar KUMAR

IPC: C23C16/52 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32

CPC classification number: C23C16/52 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3266 ,  H01J37/32669

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

公开(公告)号：US20240263304A1

公开(公告)日：2024-08-08

申请号：US18638154

申请日：2024-04-17

Applicant: ASM IP Holding B.V.

Inventor： Seung Wook Kim ,  Ju Ill Lee ,  Won Ki Jeong ,  Dong Rak Jung ,  Hong Hyun Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  H01J37/32522 ,  C23C16/45551 ,  C23C16/4586 ,  H01J37/32082

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

公开(公告)号：US20240241450A1

公开(公告)日：2024-07-18

申请号：US18412449

申请日：2024-01-12

Applicant: Meta Materials Inc.

Inventor： Milad Khoshnegar Shahrestani ,  Ripon Dey

IPC: G03F7/00 ,  G03F7/30 ,  H01J37/32

CPC classification number: G03F7/704 ,  G03F7/0005 ,  G03F7/30 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/3341

Abstract: A method for patterning a substrate involves depositing a layer of resist material on a surface of the substrate, lithographically patterning (electron beam exposing and then developing) the layer of the resist material to form a patterned resist layer having a pattern multi-faceted microscale structures with a depth profile that varies over an area of the layer of resist material, and using the patterned resist layer in an etching step to transfer the pattern of multi-faceted microscale structures from the patterned resist layer to the substrate.

公开(公告)号：US12009190B2

公开(公告)日：2024-06-11

申请号：US17658670

申请日：2022-04-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Shirouzu

IPC: H01J37/32

CPC classification number: H01J37/32935 ,  H01J37/32082 ,  H01J37/32926

Abstract: A disclosed plasma processing system 10 includes: a plasma processing apparatus 100 including a processing chamber 100a for plasma processing an object 400 to be processed, and at least one component 122, 131 which is at least partially disposed in the processing chamber 100a; a storage unit 301 for storing a recipe including a set value specifying a plasma processing condition; a tolerance determination unit 302 that determines a tolerance of the set value, based on a degree of deterioration of the at least one component 122, 131; and a recipe modification unit 303 that modifies the recipe such that the set value falls within the tolerance, when the set value is outside the tolerance.

公开(公告)号：US20240177997A1

公开(公告)日：2024-05-30

申请号：US18244904

申请日：2023-09-11

Applicant: SPTS Technologies Limited

Inventor： Scott Haymore ,  Tony Wilby ,  Steve Burgess

IPC: H01L21/285 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

CPC classification number: H01L21/2855 ,  C23C14/021 ,  C23C14/345 ,  H01J37/32082 ,  H01J37/3464 ,  H01L21/02068 ,  H01J2237/332 ,  H01J2237/335

Abstract: A PVD apparatus can perform a cleaning step and a deposition step on an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature thereon can be positioned on the substrate support. A cleaning step can be performed to remove material from the electrically conductive feature predominantly by etching with ions of an inert gas while the target is simultaneously sputtered. A deposition step is performed by applying no RF bias to the substrate support or applying an RF bias which is less than the RF bias applied to the substrate support during the cleaning step and supplying an electrical signal having an associated electrical power to the target. The RF bias, if present, and electrical power are sufficient to deposit an electrically conductive deposition material onto the electrically conductive feature by PVD.

公开(公告)号：US20240175136A1

公开(公告)日：2024-05-30

申请号：US18121169

申请日：2023-03-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hee HAN ,  Unhyeon KANG ,  Eunbi JEONG ,  Soeun AHN ,  Kyoung Ho Jeon

IPC: C23C16/505 ,  C23C16/26 ,  H01J37/32

CPC classification number: C23C16/505 ,  C23C16/26 ,  H01J37/32082 ,  H01J37/32816 ,  H01J2237/332

Abstract: An exemplary embodiment of the present invention can provide a method of manufacturing a graphene film, including preparing a substrate including a carbon layer in a chamber, and forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate.

公开(公告)号：US11993843B2

公开(公告)日：2024-05-28

申请号：US16039817

申请日：2018-07-19

Applicant: ASM IP Holding B.V.

Inventor： Seung Wook Kim ,  JuIll Lee ,  Won Ki Jeong ,  Dong Rak Jung ,  Hong Hyun Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  H01J37/32522 ,  C23C16/45551 ,  C23C16/4586 ,  H01J37/32082

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

公开(公告)号：US11961773B2

公开(公告)日：2024-04-16

申请号：US17261782

申请日：2019-07-17

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： Ligang Deng ,  Katie Hore

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/66 ,  H01S5/20 ,  H01L31/18 ,  H01L33/00 ,  H01S5/183 ,  H01S5/30

CPC classification number: H01L22/26 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/308 ,  H01S5/2086 ,  H01J2237/334 ,  H01L31/1828 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/0083 ,  H01S5/183 ,  H01S5/3013

Abstract: A method of etching into a one or more epitaxial layers of respective semiconductor material(s) in a vertical cavity surface emitting laser (VCSEL) semiconductor structure, wherein the or each semiconductor material is a III-V semiconductor material, a III-N semiconductor material, or a II-VI semiconductor material is disclosed. The method comprises placing a substrate having the semiconductor structure thereon onto a support table in a plasma processing chamber, the semiconductor structure carrying a patterned mask on the surface of the semiconductor structure distal from the support table. The method also includes process steps of establishing a flow of an etch gas mixture through the plasma processing chamber and generating a plasma within the plasma processing chamber and simultaneously applying a radio frequency (RF) bias voltage to the support table; whereby the portion(s) of the semiconductor structure not covered by the patterned mask are exposed to the etch gas mixture plasma and are thereby etched to form at least one feature in the semiconductor structure; wherein more than 90% of the etch gas mixture consists of a mixture of silicon tetrachloride (SiCl4) and nitrogen (N2).