公开(公告)号：US11848171B2

公开(公告)日：2023-12-19

申请号：US17587935

申请日：2022-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Akio Yamamoto ,  Wen Li ,  Hiroshi Oinuma ,  Shunsuke Mizutani

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/22 ,  H01J37/26

CPC classification number: H01J37/244 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2443 ,  H01J2237/2826

Abstract: Provided is a charged particle beam device and a charged particle beam device calibration method capable of correcting an influence of characteristic variation and noise with high accuracy. Control units execute a first calibration of correcting a characteristic variation between a plurality of channels in detectors and signal processing circuits by using a setting value of a control parameter for each of the plurality of channels in a state in which a primary electron beam is not emitted. The control units further execute a second calibration of correcting a characteristic variation between the plurality of channels in scintillators or the like by using the setting value of the control parameter for each of the plurality of channels in a state in which the primary electron beam is emitted.

公开(公告)号：US11837433B2

公开(公告)日：2023-12-05

申请号：US17669503

申请日：2022-02-11

Applicant: JEOL Ltd.

Inventor： Akiho Nakamura

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/147

CPC classification number: H01J37/265 ,  H01J37/1474 ,  H01J37/28 ,  H01J2237/2802 ,  H01J2237/2804

Abstract: A method of measuring a relative rotational angle includes: shifting an electron beam on a specimen plane by using a deflector; tilting the electron beam with respect to the specimen plane by using the deflector; acquiring a first STEM image including information of a scattering azimuth angle and a second STEM image not including the information of the scattering azimuth angle, before the shifting and the tilting; acquiring a third STEM image including the information of the scattering azimuth angle and a fourth STEM image not including the information of the scattering azimuth angle, after the shifting and the tilting; and obtaining the relative rotational angle based on the first STEM image, the second STEM image, the third STEM image and the fourth STEM image.

公开(公告)号：US20230369010A1

公开(公告)日：2023-11-16

申请号：US18114349

申请日：2023-02-27

Applicant: Hitachi High-Tech Corporation

Inventor： Toru Iwaya ,  Hisayuki Takasu ,  Sakae Koubori

IPC: H01J37/20 ,  H01J37/08 ,  H01J37/26 ,  H01J37/304 ,  H01J37/30 ,  H01J37/305

CPC classification number: H01J37/20 ,  H01J37/08 ,  H01J37/265 ,  H01J37/30 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/026 ,  H01J2237/202 ,  H01J2237/20214 ,  H01J2237/20221

Abstract: Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

公开(公告)号：US20230335374A1

公开(公告)日：2023-10-19

申请号：US18019088

申请日：2021-07-27

Applicant: ASML Netherlands B.V.

Inventor： Benoit Herve GAURY ,  Jun JIANG ,  Bruno LA FONTAINE ,  Shakeeb Bin HASAN ,  Kenichi KANAI ,  Jasper Frans Mathijs VAN RENS ,  Cyrus Emil TABERY ,  Long MA ,  Oliver Desmond PATTERSON ,  Jian ZHANG ,  Chih-Yu JEN ,  Yixiang WANG

IPC: H01J37/26 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/228 ,  H01J2237/2482

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

公开(公告)号：US20230335373A1

公开(公告)日：2023-10-19

申请号：US18131891

申请日：2023-04-07

Applicant: Hitachi High-Tech Corporation

Inventor： Akio YAMAMOTO ,  Wen LI ,  Shunsuke MIZUTANI ,  Naoya ISHIGAKI

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/26

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J37/265 ,  H01J2237/24475 ,  H01J2237/2448

Abstract: There is provided a technique capable of reducing deterioration of a back scattered electron (BSE) detector caused by a dark pulse. Charged particle beam apparatus includes: a plurality of BSE detectors configured to detect a BSE from a sample; and a controller. The controller acquires, within a period, a first peak time of a first peak included in an output signal from a first BSE detector among the plurality of BSE detectors, and a second peak time of a second peak included in an output signal from a second BSE detector other than the first BSE detector among the plurality of BSE detectors, determines, when the second peak is present where a time difference between the first peak time and the second peak time is within a threshold value, that the first peak is caused by the BSE, and determines, when the second peak is not present where the time difference is within the threshold value, that the first peak is caused by the dark pulse.

公开(公告)号：US20230317408A1

公开(公告)日：2023-10-05

申请号：US17711785

申请日：2022-04-01

Applicant: Intel Corporation

Inventor： Xianghong Tong ,  Martin Von Haartman ,  Wen-Hsien Chuang ,  Zhiyong Ma ,  Hyuk Ju Ryu ,  Prasoon Joshi ,  May Ling Oh ,  Jennifer Huening ,  Shuai Zhao ,  Charles Peterson ,  Ira Jewell ,  Hasan Faraby

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/244

CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J37/244 ,  H01J2237/2443 ,  H01J2237/2814 ,  H01J2237/2801 ,  H01J2237/221

Abstract: Pulsed beam prober systems, devices, and techniques are described herein related to providing a beam detection frequency that is less than a electrical test frequency. An electrical test signal at the electrical test frequency is provided to die under test. A pulsed beam is applied to the die such that the pulsed beam has packets of beam pulses or a frequency delta with respect to the electrical test frequency. The packets of beam pulses or the frequency delta elicits a detectable beam modulation in an imaging signal reflected from the die such that the imaging signal is modulated at a detection frequency less than the electrical test frequency.

公开(公告)号：US20230298852A1

公开(公告)日：2023-09-21

申请号：US18120278

申请日：2023-03-10

Applicant: ASML Netherlands B.V.

Inventor： Benoit Herve GAURY ,  Jasper Frans Mathijs VAN RENS

IPC: H01J37/26 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/244 ,  H01J37/28

Abstract: A method of measuring a delay time of a propagation of a signal in a line in a circuit structure, the method comprises irradiating the line by pulses of a charged particle beam, wherein a pulse repetition frequency of the pulses of the charged particle beam is varied. The method further comprises measuring, for each of the pulse repetition frequencies, a secondary charged particle emission responsive to the irradiating the line by the pulses of the charged particle beam at the respective pulse repetition frequency, and deriving the delay time of the line based on the secondary charged particle emission responsive to the varying of the pulse repetition frequency.

公开(公告)号：US11728131B2

公开(公告)日：2023-08-15

申请号：US17553357

申请日：2021-12-16

Applicant: ASML Netherlands B.V.

Inventor： Ning Ye ,  Jun Jiang ,  Jian Zhang ,  Yixiang Wang

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20230230799A1

公开(公告)日：2023-07-20

申请号：US17928691

申请日：2020-07-14

Applicant: Hitachi High-Tech Corporation

Inventor： Yuta IMAI ,  Junichi KATANE

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/26

CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J37/265 ,  H01J2237/226 ,  H01J2237/24578

Abstract: Provided is a sample image observation device including an SEM and a control system configured to control the SEM. An observation region of a sample is divided into a plurality of sections, and restoration processing is performed on an image which is acquired by irradiating each section with a sparse electron beam, based on scanning characteristics in the section. A reduction in quality of a restored image due to a beam irradiation position deviation caused by a scanning response is prevented and restoration with high accuracy and high throughput under a condition for preventing sample damage is possible.

公开(公告)号：US20190006145A1

公开(公告)日：2019-01-03

申请号：US16021017

申请日：2018-06-28

Applicant: NGR Inc.

Inventor： Koji KANEKO

IPC: H01J37/22 ,  G06T7/60 ,  G06T7/13 ,  H01J37/28

CPC classification number: H01J37/222 ,  G06T7/13 ,  G06T7/60 ,  G06T2207/10061 ,  G06T2207/30168 ,  H01J37/20 ,  H01J37/21 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/216 ,  H01J2237/221

Abstract: A method capable of verifying whether operation parameters, such as a focus parameter and an astigmatism correction parameter, of a scanning electron microscope are correctly adjusted. This method includes: determining a ratio of a length of an edge in a first direction to a length of the edge in a second direction perpendicular to the first direction, the edge being an edge of a pattern selected from design data; generating images of the pattern while changing an operation parameter of a scanning electron microscope; calculating an edge sharpness in the first direction of each of the images and calculating an edge sharpness in the second direction of each of the images; determining a ratio of a peak value of the edge sharpness in the first direction to a peak value of the edge sharpness in the second direction; and emitting an alarm if the ratio of the peak values does not coincide with the ratio of the lengths of the edge.