公开(公告)号：US20230335374A1

公开(公告)日：2023-10-19

申请号：US18019088

申请日：2021-07-27

Applicant: ASML Netherlands B.V.

Inventor： Benoit Herve GAURY ,  Jun JIANG ,  Bruno LA FONTAINE ,  Shakeeb Bin HASAN ,  Kenichi KANAI ,  Jasper Frans Mathijs VAN RENS ,  Cyrus Emil TABERY ,  Long MA ,  Oliver Desmond PATTERSON ,  Jian ZHANG ,  Chih-Yu JEN ,  Yixiang WANG

IPC: H01J37/26 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/228 ,  H01J2237/2482

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

公开(公告)号：US20220005666A1

公开(公告)日：2022-01-06

申请号：US17365903

申请日：2021-07-01

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu JEN ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US20200088659A1

公开(公告)日：2020-03-19

申请号：US16574970

申请日：2019-09-18

Applicant: ASML Netherlands B.V.

Inventor： Long MA ,  Chih-Yu JEN ,  Zhonghua DONG ,  Peilei ZHANG ,  Wei FANG ,  Chuan LI

IPC: G01N23/2251 ,  H01J37/28

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.

公开(公告)号：US20230298851A1

公开(公告)日：2023-09-21

申请号：US18018578

申请日：2021-07-26

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu JEN ,  Chien-Hung CHEN ,  Long MA ,  Bruno LA FONTAINE ,  Datong ZHANG

IPC: H01J37/244 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2815 ,  H01J2237/24495 ,  H01J2237/2611

Abstract: A charged particle beam apparatus for inspecting a sample is provided. The apparatus includes a pixelized electron detector to receive signal electrons generated in response to an incidence of an emitted charged particle beam onto the sample. The pixelized electron detector includes multiple pixels arranged in a grid pattern. The multiple pixels may be configured to generate multiple detection signals, wherein each detection signal corresponds to the signal electrons received by a corresponding pixel of the pixelized electron detector. The apparatus further includes a controller includes circuitry configured to determine a topographical characteristic of a structure within the sample based on the detection signals generated by the multiple pixels, and identifying a defect within the sample based on the topographical characteristic of the structure of the sample.

公开(公告)号：US20220270849A1

公开(公告)日：2022-08-25

申请号：US17638765

申请日：2020-08-26

Applicant: ASML Netherlands B.V.

Inventor： Jun JIANG ,  Chih-Yu JEN ,  Ning YE ,  Jian ZHANG

IPC: H01J37/28 ,  G01R31/307

Abstract: A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.