公开(公告)号：US11728131B2

公开(公告)日：2023-08-15

申请号：US17553357

申请日：2021-12-16

Applicant: ASML Netherlands B.V.

Inventor： Ning Ye ,  Jun Jiang ,  Jian Zhang ,  Yixiang Wang

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US11056311B2

公开(公告)日：2021-07-06

申请号：US16552991

申请日：2019-08-27

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153 ,  H01J37/18

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US20200075287A1

公开(公告)日：2020-03-05

申请号：US16552991

申请日：2019-08-27

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US12125669B2

公开(公告)日：2024-10-22

申请号：US18362757

申请日：2023-07-31

Applicant: ASML Netherlands B.V.

Inventor： Ning Ye ,  Jun Jiang ,  Jian Zhang ,  Yixiang Wang

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US20220005666A1

公开(公告)日：2022-01-06

申请号：US17365903

申请日：2021-07-01

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu JEN ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  G01N21/95 ,  G01N21/88 ,  H01J37/153

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

公开(公告)号：US11651935B2

公开(公告)日：2023-05-16

申请号：US17365903

申请日：2021-07-01

Applicant: ASML Netherlands B.V.

Inventor： Chih-Yu Jen ,  Long Ma ,  Yongjun Wang ,  Jun Jiang

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  H01J37/153 ,  H01J37/22 ,  H01J37/28 ,  H01J37/21

CPC classification number: H01J37/1474 ,  H01J37/153 ,  H01J37/21 ,  H01J37/222 ,  H01J37/263 ,  H01J37/28 ,  H01J37/30 ,  H01J2237/082 ,  H01J2237/24564 ,  H01J2237/2817

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.