公开(公告)号：US09790424B2

公开(公告)日：2017-10-17

申请号：US14682070

申请日：2015-04-08

申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Moungi G. Bawendi ,  Klavs F. Jensen ,  Bashir O. Dabbousi ,  Javier Rodriguez-Viejo ,  Frederic Victor Mikulec

IPC分类号： C09K11/00 ,  C09K11/88 ,  B82Y30/00 ,  C01B17/20 ,  C01B19/00 ,  C07F9/22 ,  C07F9/53 ,  C09K11/02 ,  C09K11/56 ,  C09K11/89 ,  C30B7/00 ,  C30B7/14 ,  C30B29/46 ,  C30B29/48 ,  C30B29/60 ,  B82Y20/00

CPC分类号： C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  C01B17/20 ,  C01B19/007 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/52 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2004/86 ,  C01P2006/60 ,  C07F9/224 ,  C07F9/5304 ,  C09K11/02 ,  C09K11/565 ,  C09K11/885 ,  C09K11/892 ,  C30B7/00 ,  C30B7/14 ,  C30B29/46 ,  C30B29/48 ,  C30B29/60 ,  C30B29/605 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/813 ,  Y10S977/824 ,  Y10S977/832 ,  Y10T428/12035 ,  Y10T428/12049 ,  Y10T428/12181 ,  Y10T428/12986 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.

公开(公告)号：US09777405B2

公开(公告)日：2017-10-03

申请号：US14674567

申请日：2015-03-31

申请人： The Florida State University Research Foundation, Inc.

发明人： Jeffrey Whalen ,  Theo Siegrist

IPC分类号： C30B29/46 ,  H01B1/10 ,  C30B9/10 ,  H01B1/08 ,  C30B9/12 ,  C30B29/22

CPC分类号： C30B29/46 ,  C30B9/10 ,  C30B9/12 ,  C30B29/22 ,  H01B1/08 ,  H01B1/10

摘要： Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

公开(公告)号：US09638813B2

公开(公告)日：2017-05-02

申请号：US14871162

申请日：2015-09-30

申请人： Ashley Stowe ,  Arnold Burger ,  Eric Lukosi

发明人： Ashley Stowe ,  Arnold Burger ,  Eric Lukosi

IPC分类号： G01T1/20 ,  G01T3/08 ,  G01T1/36 ,  C30B11/06 ,  C30B11/12 ,  C30B29/46

CPC分类号： G01T1/361 ,  C30B11/06 ,  C30B11/12 ,  C30B29/46 ,  G01T1/362 ,  G01T3/08

摘要： A combined thermal neutron detector and gamma-ray spectrometer system, including: a detection medium including a lithium chalcopyrite crystal operable for detecting thermal neutrons in a semiconductor mode and gamma-rays in a scintillator mode; and a photodetector coupled to the detection medium also operable for detecting the gamma rays. Optionally, the detection medium includes a 6LiInSe2 crystal. Optionally, the detection medium comprises a compound formed by the process of: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound and heating; wherein the Group I element includes lithium.

公开(公告)号：US09637839B2

公开(公告)日：2017-05-02

申请号：US14193962

申请日：2014-02-28

申请人： Massachusetts Institute of Technology

发明人： Jing Kong ,  Lain-Jong Li ,  Yi-Hsien Lee

IPC分类号： C30B25/18 ,  C23C16/00 ,  C30B29/46 ,  C01B31/04 ,  B23B9/00 ,  H01L23/58

CPC分类号： C30B25/186 ,  B23B9/00 ,  C01B32/20 ,  C23C16/00 ,  C30B29/46 ,  H01L23/58

摘要： Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.

公开(公告)号：US20160308107A1

公开(公告)日：2016-10-20

申请号：US15133494

申请日：2016-04-20

申请人： THE UNIVERSITY OF CHICAGO

发明人： Dmitri V. Talapin ,  Maksym V. Kovalenko ,  Jong-Soo Lee ,  Chengyang Jiang

IPC分类号： H01L35/16 ,  C09D5/24 ,  H01B1/10 ,  C09K11/02 ,  C09K11/88 ,  H01B1/06 ,  C09D1/00 ,  C09D5/22

CPC分类号： H01L35/16 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C09D1/00 ,  C09D5/22 ,  C09D5/24 ,  C09K11/025 ,  C09K11/562 ,  C09K11/565 ,  C09K11/883 ,  C30B7/00 ,  C30B29/40 ,  C30B29/46 ,  C30B29/60 ,  H01B1/06 ,  H01B1/10

摘要： Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

摘要翻译： 本文公开了一种可分离的胶体颗粒，其包含与纳米颗粒的表面结合的纳米颗粒和无机封端剂，其溶液，从双相溶剂混合物制备该纳米颗粒的方法，以及从 可分离胶体颗粒。 该方法可以产生光伏电池，压电晶体，热电层，光电子层，发光二极管，铁电层，薄膜晶体管，浮动栅极存储器件，成像器件，相变层和传感器器件。

公开(公告)号：US20160293789A1

公开(公告)日：2016-10-06

申请号：US15185076

申请日：2016-06-17

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Wen-Chueh Pan ,  Tsang-Ming Hsu ,  Jen-Chieh Li ,  Tsan-Tung Chen ,  Chui-Yu Chiu ,  Shih-Shan Wei

IPC分类号： H01L31/18 ,  C23C16/54 ,  C23C16/52 ,  C23C16/46 ,  G01N23/22 ,  C30B25/08 ,  C30B25/02 ,  C30B25/16 ,  C30B29/46 ,  C23C16/06 ,  C30B25/10

CPC分类号： H01L31/18 ,  C23C14/0623 ,  C23C14/562 ,  C23C14/568 ,  C30B25/025 ,  C30B25/08 ,  C30B25/10 ,  C30B25/16 ,  C30B29/46 ,  G01N23/22 ,  H01L31/0322 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

摘要： The present disclosure relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present disclosure, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.

摘要翻译： 本发明涉及一种用于制造CIGS膜的气相沉积设备，其中Se蒸汽沉积模块，In / Ga线性气相沉积模块和Cu线性气相沉积模块集成在相同的真空室中，用于制造CIGS 通过根据退绕模块，加热装置，减热装置，速度控制辊模块，冷却模块和卷绕模块的自动制造工艺在柔性太阳能电池基板上的吸收层。 此外，在本公开中，膜厚测量模块用于测量柔性太阳能电池基板上的CIGS黄铜矿结晶膜的厚度，并且将CIGS黄铜矿结晶膜的厚度数据传输到机电控制模块 作为以下制造工艺的参数调制的参考，所谓的APC（Advanced Process Control）系统。

公开(公告)号：US20160240376A1

公开(公告)日：2016-08-18

申请号：US14989848

申请日：2016-01-07

申请人： G-FORCE NANOTECH LTD.

发明人： CHAO-HUI YEH ,  JEN-KUAN CHIU

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/48

CPC分类号： H01L21/02568 ,  C23C16/305 ,  C23C16/448 ,  C23C16/46 ,  C23C16/48 ,  C23C16/482 ,  C30B25/105 ,  C30B29/46 ,  C30B29/60 ,  H01J37/32321 ,  H01J37/32339 ,  H01J2237/3321 ,  H01L21/0262

摘要： A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

摘要翻译： 提供了制造二维层状硫族化物膜的方法和装置。 催化剂气体，基于金属的前体气体和基于硫属元素的前体气体被外部刺激物离子化，以产生能量粒子，这促使金属基前体气体在反应室中进行硫属原子取代反应以形成均匀的二维 通过化学气相沉积形成至少一层单晶层的硫族化物膜。

公开(公告)号：US20160138183A1

公开(公告)日：2016-05-19

申请号：US15004697

申请日：2016-01-22

申请人： UNIVERSITY OF UTAH RESEARCH FOUNDATION

发明人： Michael Hans Risbud Bartl ,  JacQueline T. Siy

IPC分类号： C30B7/14 ,  C30B29/46 ,  C09K11/88 ,  C30B29/48

CPC分类号： C30B7/14 ,  C09K11/881 ,  C09K11/883 ,  C30B29/16 ,  C30B29/40 ,  C30B29/46 ,  C30B29/48 ,  C30B29/605

摘要： Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

摘要翻译： 低温有机金属成核和基于结晶的合成方法，用于制造具有窄尺寸分布和可调，尺寸和形状依赖的电子和光学性质的半导体和金属胶体纳米晶体。 方法包括（1）在包括至少一种溶剂，阳离子前体，阴离子前体和至少第一表面稳定配体的惰性气氛下在反应容器中形成反应混合物，同时在约 50℃至约130℃，和（2）在保持温度，搅拌和惰性气体气氛的同时在反应混合物中生长纳米晶体一段时间。

公开(公告)号：US20160093689A1

公开(公告)日：2016-03-31

申请号：US14871277

申请日：2015-09-30

申请人： Aaron S. George ,  Robert Ionescu ,  Hamed Hosseini Bay ,  Mihrimah Ozkan ,  Cengiz S. Ozkan

发明人： Aaron S. George ,  Robert Ionescu ,  Hamed Hosseini Bay ,  Mihrimah Ozkan ,  Cengiz S. Ozkan

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC分类号： H01L29/78681 ,  B82Y30/00 ,  C23C16/305 ,  C30B29/46 ,  H01L21/02381 ,  H01L21/02485 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02516 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/02694 ,  H01L29/66742 ,  H01L29/66969

摘要： A coated substrate including a thin film of a transition metal dichalcogenide and associated methods are shown. In one example, the substrate is a semiconductor wafer. In one example, the thin film is atomically thin, and the substrate is a number of centimeters in diameter. In one example a crystalline structure of the thin film is substantially 2H hexagonal.

摘要翻译： 示出了包括过渡金属二硫属元素化物的薄膜的涂布基材和相关方法。 在一个示例中，衬底是半导体晶片。 在一个实例中，薄膜原子上很薄，并且基底的直径为数厘米。 在一个实例中，薄膜的晶体结构基本上为2H的六角形。

公开(公告)号：US20160064663A1

公开(公告)日：2016-03-03

申请号：US14937429

申请日：2015-11-10

申请人： UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.

发明人： Fujio MASUOKA ,  Hiroki NAKAMURA

IPC分类号： H01L45/00 ,  H01L29/66 ,  H01L27/24

CPC分类号： H01L45/1233 ,  C23C16/305 ,  C30B29/46 ,  H01L21/02417 ,  H01L21/02568 ,  H01L21/76208 ,  H01L27/2454 ,  H01L29/66545 ,  H01L29/66666 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： A semiconductor device includes first pillar-shaped semiconductor layers, a first gate insulating film formed around the first pillar-shaped semiconductor layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed around upper portions of the first pillar-shaped semiconductor layers, first contacts formed of a first metal material and formed around the second gate insulating film, second contacts formed of a second metal material and connecting upper portions of the first contacts and upper portions of the first pillar-shaped semiconductor layers, second diffusion layers formed in lower portions of the first pillar-shaped semiconductor layers, pillar-shaped insulator layers formed on the second contacts, variable-resistance films formed around upper portions of the pillar-shaped insulator layers, and lower electrodes formed around lower portions of the pillar-shaped insulator layers and connected to the variable-resistance films.

摘要翻译： 半导体器件包括第一柱状半导体层，围绕第一柱状半导体层形成的第一栅极绝缘膜，由金属形成的栅电极，并形成在第一栅极绝缘膜周围;栅极线，由金属形成并连接到栅极 电极，形成在第一柱状半导体层的上部周围的第二栅极绝缘膜，由第一金属材料形成并形成在第二栅极绝缘膜周围的第一触点，由第二金属材料形成的第二触点， 第一柱状半导体层的第一接触和上部，形成在第一柱状半导体层的下部的第二扩散层，形成在第二接触部上的柱状绝缘体层，形成在上部的上部的可变电阻膜 的柱状绝缘体层，下部电极形成在p 1的下部 llar形绝缘体层并连接到可变电阻膜。