Gas Processing Apparatus
    19.
    发明申请
    Gas Processing Apparatus 审中-公开
    气体处理装置

    公开(公告)号:US20170007958A1

    公开(公告)日:2017-01-12

    申请号:US15204229

    申请日:2016-07-07

    摘要: A gas processing apparatus of an embodiment has stacks, gas flow paths, an AC power supply, and a flow limiter. The stacks are away from each other and in parallel. Each stack includes a dielectric substrate and a first to a third electrode. The first and second electrodes are respectively disposed on the first and second main surfaces of the dielectric substrate. The third electrode is disposed inside the dielectric substrates. The gas flow paths supply a target gas between the stacks, The AC power supply applies an AC voltage across the first and second electrodes and the third electrodes, so as to generate plasma induced flows of the target gas between the dielectric substrates. The flow limiter is disposed on a downstream side of the stacks and limits a flow rate of the target gas.

    摘要翻译: 实施例的气体处理装置具有堆叠,气体流路,AC电源和流量限制器。 堆叠彼此远离并且平行。 每个堆叠包括电介质基板和第一至第三电极。 第一和第二电极分别设置在电介质基板的第一和第二主表面上。 第三电极设置在电介质基板的内部。 气体流动路径在堆叠之间提供目标​​气体.AC电源施加跨越第一和第二电极和第三电极的AC电压,以便在电介质基板之间产生目标气体的等离子体感应流。 流量限制器设置在堆叠的下游侧并限制目标气体的流量。