公开(公告)号：US11222958B2

公开(公告)日：2022-01-11

申请号：US16572341

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Hsing Hsu ,  Sai-Hooi Yeong ,  Ching-Wei Tsai ,  Kuan-Lun Cheng ,  Chih-Hao Wang ,  Min Cao

IPC: H01L29/51 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/02

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

公开(公告)号：US11094361B2

公开(公告)日：2021-08-17

申请号：US16122057

申请日：2018-09-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Katherine Chiang ,  Chung Te Lin ,  Min Cao ,  Yuh-Jier Mii ,  Sheng-Chih Lai

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: In some embodiments, the present disclosure relates to an integrated circuit. The integrated circuit has an operative magnetic tunnel junction (MTJ) device configured to store a data state. The operative MTJ device is coupled to a bit-line. A regulating access apparatus is coupled between the operative MTJ device and a first word-line. The regulating access apparatus has one or more regulating MTJ devices that are configured to control a current provided to the operative MTJ device.

公开(公告)号：US11031418B2

公开(公告)日：2021-06-08

申请号：US16741530

申请日：2020-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzer-Min Shen ,  Zhiqiang Wu ,  Chung-Cheng Wu ,  Ching-Wei Tsai ,  Kuan-Lun Cheng ,  Chih-Hao Wang ,  Min Cao

IPC: H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L21/762 ,  H01L21/84 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L29/04 ,  H01L29/06

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first fin active region of a first semiconductor material disposed within the first region, oriented in a first direction, wherein the first fin active region has a crystalline direction along the first direction; and a second fin active region of a second semiconductor material disposed within the second region and oriented in the first direction, wherein the second fin active region has a crystalline direction along the first direction.

公开(公告)号：US20210057273A1

公开(公告)日：2021-02-25

申请号：US16547763

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Ping Chen ,  Ming-Han Lee ,  Shin-Yi Yang ,  Yung-Hsu Wu ,  Chia-Tien Wu ,  Shau-Lin Shue ,  Min Cao

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.

公开(公告)号：US20200152666A1

公开(公告)日：2020-05-14

申请号：US16741530

申请日：2020-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzer-Min Shen ,  Zhiqiang Wu ,  Chung-Cheng Wu ,  Ching-Wei Tsai ,  Kuan-Lun Cheng ,  Chih-Hao Wang ,  Min Cao

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/786 ,  H01L29/423

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first fin active region of a first semiconductor material disposed within the first region, oriented in a first direction, wherein the first fin active region has a crystalline direction along the first direction; and a second fin active region of a second semiconductor material disposed within the second region and oriented in the first direction, wherein the second fin active region has a crystalline direction along the first direction.

公开(公告)号：US12148745B2

公开(公告)日：2024-11-19

申请号：US18355960

申请日：2023-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Wang ,  Shang-Wen Chang ,  Min Cao

IPC: H01L27/02 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  G06F30/392

Abstract: The disclosed circuit includes a first and a second active region (AR) spaced a spacing S along a direction in a first standard cell (SC) that spans Dl along the direction between a first and a second cell edge (CE). Each of the first and second ARs spans a first width W1 along the direction; a third and a fourth AR spaced S in a second SC that spans a second dimension Ds along the direction between a third and a fourth CE; and gate stacks extend from the fourth CE of the second SC to the first CE of the first SC, wherein Ds

公开(公告)号：US20240379654A1

公开(公告)日：2024-11-14

申请号：US18783563

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hao Wang ,  Shang-Wen Chang ,  Min Cao

IPC: H01L27/02 ,  G06F30/392 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: The disclosed circuit includes a first and a second active region (AR) spaced a spacing S along a direction in a first standard cell (SC) that spans Dl along the direction between a first and a second cell edge (CE). Each of the first and second ARs spans a first width W1 along the direction; a third and a fourth AR spaced S in a second SC that spans a second dimension Ds along the direction between a third and a fourth CE; and gate stacks extend from the fourth CE of the second SC to the first CE of the first SC, wherein Ds

公开(公告)号：US12094880B2

公开(公告)日：2024-09-17

申请号：US18168065

申请日：2023-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ali Keshavarzi ,  Ta-Pen Guo ,  Shu-Hui Sung ,  Hsiang-Jen Tseng ,  Shyue-Shyh Lin ,  Lee-Chung Lu ,  Chung-Cheng Wu ,  Li-Chun Tien ,  Jung-Chan Yang ,  Ting Yu Chen ,  Min Cao ,  Yung-Chin Hou

IPC: H01L27/092 ,  H01L21/8238 ,  H01L23/485 ,  H01L27/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/092 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/4238 ,  H01L29/495 ,  H01L29/66545 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

公开(公告)号：US12080593B2

公开(公告)日：2024-09-03

申请号：US17859981

申请日：2022-07-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Ping Chen ,  Ming-Han Lee ,  Shin-Yi Yang ,  Yung-Hsu Wu ,  Chia-Tien Wu ,  Shau-Lin Shue ,  Min Cao

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53252 ,  H01L23/53266 ,  H01L21/3212

Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.

公开(公告)号：US11735594B2

公开(公告)日：2023-08-22

申请号：US17341142

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzer-Min Shen ,  Zhiqiang Wu ,  Chung-Cheng Wu ,  Ching-Wei Tsai ,  Kuan-Lun Cheng ,  Chih-Hao Wang ,  Min Cao

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/786 ,  H01L27/12 ,  H01L21/762 ,  H01L21/84 ,  H01L29/423 ,  H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L29/04

CPC classification number: H01L27/1207 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/1033 ,  H01L29/42392 ,  H01L29/785 ,  H01L29/7869 ,  H01L21/823878 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/7853

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first fin active region of a first semiconductor material disposed within the first region, oriented in a first direction, wherein the first fin active region has a crystalline direction along the first direction; and a second fin active region of a second semiconductor material disposed within the second region and oriented in the first direction, wherein the second fin active region has a crystalline direction along the first direction.