公开(公告)号：US20210301388A1

公开(公告)日：2021-09-30

申请号：US17037934

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Wonwoong CHUNG ,  Younjoung CHO ,  Youngha SONG ,  Yonghun SHIN ,  Byungkil LEE ,  Sungdo LEE ,  Jinhee LEE

IPC: C23C14/24 ,  C23C16/455 ,  F17C1/14

Abstract: A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

公开(公告)号：US20210040130A1

公开(公告)日：2021-02-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Seungmin RYU ,  Gyuhee PARK ,  Jaesoon LIM ,  Younjoung CHO ,  Akio SAITO ,  Wakana FUSE ,  Yutaro AOKI ,  Takanori KOIDE

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US20210028010A1

公开(公告)日：2021-01-28

申请号：US16791189

申请日：2020-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo KIM ,  Haeryong KIM ,  Seungmin RYU ,  Sunmin MOON ,  Jeonggyu SONG ,  Changsu WOO ,  Kyooho JUNG ,  Younjoung CHO

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US20170207083A1

公开(公告)日：2017-07-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Myong Woon KIM ,  Younjoung CHO ,  Sang lck LEE ,  Sang Yong JEON ,  In Kyung JUNG ,  Wonwoong CHUNG ,  Jungsik CHOI

IPC: H01L21/02 ,  H01L21/768 ,  C01B33/12

CPC classification number: H01L21/02208 ,  C01B33/126 ,  C23C16/00 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5329 ,  H01L2221/1047

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.

公开(公告)号：US20250163569A1

公开(公告)日：2025-05-22

申请号：US18753418

申请日：2024-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung LEE ,  Jeong-Do OH ,  Eun Hyea KO ,  Ee-Seul SHIN ,  Kwan-Hyun PARK ,  Kang-Min LEE ,  Younjoung CHO ,  Hoon HAN ,  Byungkeun HWANG ,  Sunhye HWANG

IPC: C23C16/04 ,  B05D1/00 ,  C23C16/02 ,  C23C16/06

Abstract: An area-selective film forming method may include preparing a substrate having at least two areas made of different materials, forming a polyurea film on the at least two areas of the substrate, annealing the polyurea film and selectively removing the polyurea film on at least one area among the at least two areas, and forming a target film on the one area or a remaining area among the at least two areas. The one area may be an area from which the polyurea film is removed. The remaining area may be an area in which the polyurea film is not removed during the annealing the polyurea film and the selectively removing the polyurea film.

公开(公告)号：US20230307227A1

公开(公告)日：2023-09-28

申请号：US18189556

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd. ,  DNF Co., Ltd.

Inventor： Sunhye HWANG ,  Sung Gi KIM ,  Jihyun LEE ,  Yujin CHO ,  Seung SON ,  Gyun Sang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC classification number: H01L21/02216 ,  C23C16/45553 ,  H01L21/02164 ,  C23C16/4408 ,  C23C16/401

Abstract: Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

公开(公告)号：US20230257409A1

公开(公告)日：2023-08-17

申请号：US18139053

申请日：2023-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Hiroshi NIHEI ,  Masashi SHIRAI ,  Jaesoon LIM ,  Younjoung CHO

IPC: C07F15/06 ,  H01L21/285 ,  C23C16/18 ,  C23C16/44 ,  C23C16/02 ,  H01L21/768 ,  C23C16/04

CPC classification number: C07F15/065 ,  H01L21/28562 ,  H01L21/28568 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/0227 ,  H01L21/76849 ,  C23C16/0209 ,  C23C16/04

Abstract: A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

公开(公告)号：US20220324887A1

公开(公告)日：2022-10-13

申请号：US17708323

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Jaewoon KIM ,  Kazuki HARANO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yutaro AOKI ,  Gyuhee PARK ,  Younjoung CHO ,  Wakana FUSE ,  Yoshiki MANABE ,  Hiroyuki UCHIUZOU ,  Masayuki KIMURA ,  Takahiro YOSHII

IPC: C07F9/00 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

公开(公告)号：US20210284667A1

公开(公告)日：2021-09-16

申请号：US17193531

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Jaewoon KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Yutaro AOKI ,  Hiroyuki UCHIUZOU ,  Wakana FUSE

IPC: C07F9/141 ,  C23C16/18 ,  H01L21/285

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.

公开(公告)号：US20210175073A1

公开(公告)日：2021-06-10

申请号：US17022198

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Min RYU ,  Jiyu CHOI ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/08 ,  C23C16/30 ,  C07C211/08 ,  C01G19/00

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n  [Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.