公开(公告)号：US09306021B2

公开(公告)日：2016-04-05

申请号：US14244223

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong Chung ,  David Seo ,  Seong-jun Park ,  Kyung-eun Byun ,  Hyun-jae Song ,  Hee-jun Yang ,  Jin-seong Heo

IPC: H01L29/02 ,  H01L29/47 ,  H01L21/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/41 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/47 ,  B82Y10/00 ,  H01L21/74 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/413 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66477 ,  H01L29/66977 ,  H01L29/7781 ,  H01L29/7839

Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.

Abstract translation: 石墨烯装置包括：具有第一区域和第二区域的半导体衬底; 在第一区域上但不在半导体衬底的第二区域上的石墨烯层; 在所述石墨烯层的第一部分上的第一电极; 在所述石墨烯层的第二部分上的第二电极; 石墨烯层和第二电极之间的绝缘层; 以及在所述半导体衬底的第二区域上的第三电极。 半导体衬底具有由石墨烯层和半导体衬底的结合形成的可调肖特基势垒。

公开(公告)号：US09299789B2

公开(公告)日：2016-03-29

申请号：US13943006

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： David Seo ,  Ho-jung Kim ,  Hyun-jong Chung ,  Seong-jun Park ,  Kyung-eun Byun ,  Hyun-jae Song ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88 ,  H01L29/40

CPC classification number: H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.

Abstract translation: 存储器件包括具有源电极，漏电极和栅电极的石墨烯开关器件。 石墨烯开关器件包括形成在漏电极和沟道之间的从源电极朝向漏电极的方向上的肖特基势垒。 存储器件不需要包括额外的存储元件。

公开(公告)号：US09166062B2

公开(公告)日：2015-10-20

申请号：US14693680

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/36 ,  H01L29/786 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.