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    TOUCH PANEL
    15.
    发明申请
    TOUCH PANEL 审中-公开
    触控面板

    公开(公告)号：US20160306477A1

    公开(公告)日：2016-10-20

    申请号：US15057995

    申请日：2016-03-01

    Applicant: Samsung Display Co., Ltd.

    Inventor： Hee Young Lee ,  Hyeon Jeong Sang ,  Eun Mi Seo ,  Yun Jang ,  Suk Choi

    IPC: G06F3/041 ,  G02B5/20 ,  G02B5/30 ,  G06F1/16

    Abstract: This disclosure provides a touch panel including: a touch sensor; a phase difference film stacked on the touch sensor; and a touch panel configured to include a polarizer stacked on the phase difference film, wherein the touch panel includes an infrared-blocking substance. This results in a decrease in the curvature radius which in turn provides a touch panel with increased bending range and since the infrared radiation is also blocked due to the infrared-blocking agent, it prevents the breakage of displays due to infrared rays.

    Abstract translation: 本公开提供了一种触摸面板，包括：触摸传感器; 层叠在触摸传感器上的相位差膜; 以及触摸面板，被配置为包括层叠在所述相位差膜上的偏振片，其中所述触摸面板包括红外阻挡物质。 这导致曲率半径的减小，这又提供了具有增加的弯曲范围的触摸面板，并且由于红外线阻挡剂也阻挡了红外线辐射，因此防止了由于红外线而引起的显示器损坏。

    Manufacturing method of thin film transistor of display device
    16.
    发明授权
    Manufacturing method of thin film transistor of display device 有权
    显示装置薄膜晶体管的制造方法

    公开(公告)号：US09343548B1

    公开(公告)日：2016-05-17

    申请号：US14749722

    申请日：2015-06-25

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hyeon Jeong Sang ,  Hee Young Lee

    IPC: H01L29/66 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L21/32 ,  H01L29/06 ,  H01L29/786

    CPC classification number: H01L29/66742 ,  H01L21/2652 ,  H01L21/28158 ,  H01L21/32 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

    Abstract: A manufacturing method of a thin film transistor of a display device, the method including forming a gate insulating layer on a semiconductor layer; attaching a halftone mask onto the gate insulating layer; forming a channel region including a plurality of bridged grain lines formed; exposing the gate insulating layer of the channel region; forming a gate electrode layer on the halftone mask and the gate insulating layer; forming a gate electrode on the channel region by etching a portion corresponding to a boundary of the channel region of the gate electrode layer; removing the halftone mask; forming source/drain regions; forming an interlayer insulating layer on the gate electrode and the gate insulating layer; forming contact holes by etching the gate insulating layer and the interlayer insulating layer to expose the source/drain regions; and forming source/drain electrodes connected with the source/drain regions through the contact holes.

    Abstract translation: 一种显示装置的薄膜晶体管的制造方法，所述方法包括在半导体层上形成栅极绝缘层; 将半色调掩模附着到栅极绝缘层上; 形成包括形成的多个桥接晶粒线的沟道区; 暴露沟道区的栅极绝缘层; 在半色调掩模和栅极绝缘层上形成栅极电极层; 通过蚀刻与栅电极层的沟道区域的边界相对应的部分，在沟道区上形成栅电极; 去除半色调面膜; 形成源/漏区; 在栅电极和栅极绝缘层上形成层间绝缘层; 通过蚀刻栅极绝缘层和层间绝缘层形成接触孔以暴露源极/漏极区域; 以及通过接触孔形成与源极/漏极区域连接的源极/漏极。

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