公开(公告)号：US06768125B2

公开(公告)日：2004-07-27

申请号：US10337903

申请日：2003-01-08

Applicant: Elmar Platzgummer ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach ,  Alfred Chalupka ,  Gertraud Lammer ,  Herbert Buschbeck ,  Robert Nowak ,  Till Windischbauer

Inventor： Elmar Platzgummer ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach ,  Alfred Chalupka ,  Gertraud Lammer ,  Herbert Buschbeck ,  Robert Nowak ,  Till Windischbauer

IPC: H01J3706

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174

Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

Abstract translation: 一种用于限定用于粒子束曝光设备（100）的图案的设备（102），所述设备适于用带电粒子的光束（lb，pb）照射，并且仅使光束通过多个 的孔径包括孔径阵列装置（203）和消隐装置（202）。 孔径阵列装置（203）具有限定子束（bm）形状的相同形状的多个孔（21,230）。 消隐装置（202）用于切断所选子束的通过; 它具有多个开口（220），每个开口对应于孔阵列装置（203）的相应孔径（230），并且设置有偏转装置（221），该偏转装置可控制，以使通过开口辐射的颗粒偏离其路径（p1 ）到所述曝光装置（100）内的吸收表面。 孔（21）布置在由多个交错的孔（p1）组成的图案定义区域（pf）内的消隐和孔径阵列装置（202,203）上。 线（p1）中的每一个交替地包括没有孔的第一段（sf）和第二段（af），每个段包括通过行偏移（pm）间隔开的多个孔，所述行偏移是 孔的宽度（w），所述第一段（sf）的长度（A）大于行偏移。 在沿着该粒子束的方向观察的消隐装置（202）的前面，提供具有多个开口（210）的盖装置（201），每个开口对应于消隐装置的相应开口（230） 具有比消隐阵列装置的开口（220）的宽度（w2）小的宽度（w1）。

公开(公告)号：US20080210887A1

公开(公告)日：2008-09-04

申请号：US12090636

申请日：2006-10-20

Applicant: Herbert Buschbeck ,  Elmar Platzgummer ,  Gerhard Stengl ,  Herbert Vonach

Inventor： Herbert Buschbeck ,  Elmar Platzgummer ,  Gerhard Stengl ,  Herbert Vonach

IPC: H01J37/147 ,  H01J37/21 ,  H01J37/317

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/21 ,  H01J2237/0492 ,  H01J2237/24578

Abstract: A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens (403) comprising an outer pole piece (411) having a radial inner end (411′), and an inner pole piece (412) having a lowermost end (412′) disposed closest to the radial inner end of the outer pole piece, a gap being formed by those; a focusing electrostatic lens (450) having at least a first electrode (451) and a second electrode (450) disposed in a region of the gap; and a controller (C) configured to control a focusing power of the first electrostatic lens based on a signal indicative of a distance of a surface of a substrate from a portion of the first magnetic lens disposed closest to the substrate.

Abstract translation: 带电粒子系统包括用于产生带电粒子束的粒子源和粒子光学投影系统。 粒子光学投影系统包括聚焦第一磁性透镜（403），其包括具有径向内端（411'）的外极片（411）和设置有最下端（412'）的内极片（412） 最靠近外极片的径向内端的间隙由它们形成; 具有至少设置在所述间隙的区域中的第一电极（451）和第二电极（450）的聚焦静电透镜（450） 以及控制器（C），被配置为基于表示基板的表面距离最靠近基板设置的第一磁性透镜的部分的距离的信号来控制第一静电透镜的聚焦能力。

公开(公告)号：US06326632B1

公开(公告)日：2001-12-04

申请号：US09417633

申请日：1999-10-13

Applicant: Herbert Buschbeck ,  Alfred Chalupka ,  Gertraud Lammer ,  Hans Loeschner ,  Gerhard Stengl

Inventor： Herbert Buschbeck ,  Alfred Chalupka ,  Gertraud Lammer ,  Hans Loeschner ,  Gerhard Stengl

IPC: G21K108

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/04924

Abstract: In a particle-optical imaging lithography system, an illuminating system comprising a particle source and a first electrostatic lens arrangement produces a particle beam which penetrates a mask foil provided with an orifice structure positioned in the particle beam path. This structure is imaged on a substrate plane by a projection system comprising a second electrostatic lens arrangement. The first and second lens arrangements each comprise, on their respective sides facing the mask holding device, at least one pre- and post-mask electrode, respectively. By applying different electrostatic potentials to the pre- and post-mask electrodes and to the mask foil, the mask foil and the pre-mask electrode form a grid lens with negative refracting power, and the mask foil and the post-mask electrode also form a grid lens with negative refracting power.

Abstract translation: 在粒子光学成像光刻系统中，包括粒子源和第一静电透镜装置的照明系统产生穿透设置有位于粒子束路径中的孔结构的掩模箔的粒子束。 该结构通过包括第二静电透镜装置的投影系统在基板平面上成像。 第一和第二透镜装置在其面对掩模保持装置的相应侧面上分别包括至少一个前和后掩模电极。 通过对前后掩模电极和掩模箔施加不同的静电电位，掩模箔和预掩模电极形成具有负折射力的网格透镜，并且掩模箔和后掩模电极也形成 具有负折射力的网格透镜。

公开(公告)号：US5874739A

公开(公告)日：1999-02-23

申请号：US914070

申请日：1997-08-18

Applicant: Herbert Buschbeck ,  Alfred Chalupka ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach

Inventor： Herbert Buschbeck ,  Alfred Chalupka ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach

IPC: G03F7/20 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027 ,  H01J37/317

CPC classification number: H01J37/12 ,  G03F7/2047 ,  H01J2237/04924 ,  H01J2237/3175

Abstract: An arrangement for shadow-casting lithography by focusing electrically charged particles for the purpose of imaging structures of a mask on a substrate disposed immediately to the rear thereof, comprising a particle source (2) and an extraction system (3) which produces a divergent particle beam issuing from a substantially point-shaped virtual source, and comprising a lens (6) for focusing the divergent particle beam which comprises an electrode arrangement (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h) which includes at least one electrostatic collector lens (6a to 6f in conjunction with an electrostatic diverging lens (6g, 6h) in order to be able to compensate lens errors of the collector lens in a purposeful manner with respect to lens errors of the diverging lens and to render possible a predeterminable change in the imaging scale. The diverging lens is preferably disposed in the beam direction at a distance to the rear of the collector lens in immediate proximity of the mask in order to be able to use the mask as a grating for the diverging lens.

Abstract translation: 一种用于通过聚焦带电粒子的方法，用于通过聚焦带电粒子的方法将掩模的结构成像在立即设置在其后面的基底上，包括产生发散粒子的粒子源（2）和提取系统（3） 并且包括用于聚焦发散粒子束的透镜（6），所述透镜（6）包括至少包括至少包括电极装置（6a，6b，6c，6d，6e，6f，6g，6h） 一个静电收集透镜（6a至6f与静电发散透镜（6g，6h）结合），以便能够针对发散透镜的透镜误差以有目的的方式补偿收集透镜的透镜误差，并使其成为可能 成像刻度的可预先确定的变化，发散透镜优选地设置在光束方向上，在与掩模紧密接近的集光透镜的后方一定距离处，以便被遮蔽 e使用掩模作为发散透镜的光栅。

公开(公告)号：US08368015B2

公开(公告)日：2013-02-05

申请号：US11990067

申请日：2006-08-08

Applicant: Elmar Platzgummer ,  Gerhard Stengl ,  Helmut Falkner

Inventor： Elmar Platzgummer ,  Gerhard Stengl ,  Helmut Falkner

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

Abstract translation: 多子束多列粒子光学系统技术领域本发明涉及一种多子束多列粒子光学系统，该多子束多列粒子光学系统包括多个列，其被布置成阵列以同时暴露衬底，每个列具有光轴，并且包括：子束产生装置，其包括至少一个 用于产生多个带电粒子束的图案的多孔板，以及包括至少一个电极元件的静电透镜装置; 所述至少一个电极元件具有由面向光轴的内周边缘限定的孔，所述孔在与所述光轴正交的平面中具有中心和预定形状; 其中在所述多个列中的至少一个列中，所述孔的预定形状是非圆形形状，其具有围绕所述孔的中心的来自理想圆的突起和凹陷中的至少一个。

公开(公告)号：US4985634A

公开(公告)日：1991-01-15

申请号：US226275

申请日：1988-07-29

Applicant: Gerhard Stengl ,  Hilton F. Glavish

Inventor： Gerhard Stengl ,  Hilton F. Glavish

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/04928 ,  H01J2237/1207 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

Abstract translation: 描述了用于投影离子束光刻的装置和方法，其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真，大场，缩小图像。 所示的列包括加速的Einzel透镜，随后是间隙透镜，具有许多合作特征。 通过协调选择光学柱的参数，同时最小化透镜失真和色彩模糊。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量，并且提供了将新场与现有图案相匹配的装置，即使后者具有 被处理扭曲了。 计量系统使仪器方便校准和调整。

公开(公告)号：US4894549A

公开(公告)日：1990-01-16

申请号：US164106

申请日：1988-03-04

Applicant: Gerhard Stengl

Inventor： Gerhard Stengl

IPC: H01J37/10 ,  H01J37/30 ,  H01J37/305

CPC classification number: H01J37/3007

Abstract: An ion projection lithography system provides an immersion lens between the mask and the substrate, a mask between the immersion lens and the ion source and ExB fiter between the mask and the source but cooperating with a diaphragm located close to the crossing point or focal point of the immersion lens so that ions of undesired mass are rejected from the beam by impingement upon the diaphragm while utilizing low magnetic and electrical field strengths of the ExB filter.

Abstract translation: 离子投影光刻系统在掩模和基板之间提供浸没透镜，浸没透镜和离子源之间的掩模和掩模和源之间的ExB薄膜，但是与位于接近透光点和焦点的交叉点或焦点 浸没透镜，使得不需要的质量的离子通过冲击到隔膜而从光束中被排斥，同时利用ExB滤光器的低磁场强度和电场强度。

公开(公告)号：US4891547A

公开(公告)日：1990-01-02

申请号：US205535

申请日：1988-06-10

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F1/20 ,  G03F1/22

Abstract: The mask of our invention can be used in image forming units, for example in ion projection microlithography. The mask comprises a mask foil clamped into a retaining frame. The mask foil has a larger thermal expansion coefficient than the retaining frame. To make this mask the mask foil and retaining frame are heatead to a higher temperature than room temperature and clamped in position at this temperature.

Abstract translation: 本发明的掩模可用于图像形成单元，例如在离子投影微光刻中。 掩模包括夹在保持框架中的掩模箔。 掩模箔具有比保持框架更大的热膨胀系数。 为了使这个掩模，掩模箔和固定框架在比室温高的温度下被捕获并在该温度下被夹紧就位。

公开(公告)号：US4775797A

公开(公告)日：1988-10-04

申请号：US930805

申请日：1986-11-13

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/22 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G01J1/00

CPC classification number: G03F1/22 ,  G03F7/2002 ,  G03F7/707 ,  G03F7/70866 ,  G03F7/70875

Abstract: Our invention is a process for stabilizing a projection mask which is put in operation at an elevated temperature. The frame containing the mask foil is heated to a temperature which is higher than the temperature of the mask foil. The mask foil is thus kept under tension by controlling the temperature of the frame it is held in and distortions like the distortions which would otherwise occur in long time operation and as conditioned by the mask foil hanging through it are avoided. The effect of the expansion of the mask foil can be compensated in the image forming unit by correction of the image formation scale.

Abstract translation: 我们的发明是一种在升高的温度下投入使用的投影掩模的稳定化方法。 将包含掩模箔的框架加热到高于掩模箔的温度的温度。 因此，掩模箔通过控制其保持的框架的温度而保持在张力下，并且避免了像在长时间操作中会发生的失真以及通过悬挂在其上的掩模箔调节的扭曲。 可以通过图像形成标度的校正在图像形成单元中补偿掩模箔的膨胀效果。

公开(公告)号：US08368030B2

公开(公告)日：2013-02-05

申请号：US11988922

申请日：2006-07-20

Applicant: Elmar Platzgummer ,  Gerhard Stengl

Inventor： Elmar Platzgummer ,  Gerhard Stengl

IPC: G21K5/04

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0435

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.