Process for making a transmission mask
    11.
    发明授权
    Process for making a transmission mask 失效
    制作传输掩码的过程

    公开(公告)号:US4780382A

    公开(公告)日:1988-10-25

    申请号:US930812

    申请日:1986-11-13

    CPC classification number: G03F1/20 Y10S430/167

    Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.

    Abstract translation: 本发明是一种制造透射掩模的方法,该透射掩模可用于通过两层电镀沉积形成掩模结构,另一种覆盖掩模中的开口的栅格结构,以加法或减法的方式构造半导体衬底 结构体。 结构的厚度可自由选择自调节(在已知工程方法的限度内)。 目的是生产在掩模表面上方具有恒定有效厚度的透射掩模。

    Self-supporting mask, method for production as well as use of same
    12.
    发明授权
    Self-supporting mask, method for production as well as use of same 失效
    自支撑面膜,生产方法以及使用方法

    公开(公告)号:US4370556A

    公开(公告)日:1983-01-25

    申请号:US217064

    申请日:1980-12-16

    CPC classification number: G03F1/20 G03F7/70691 G03F7/708 G21K1/10

    Abstract: Mask for use in the treatment of substrates with an image-forming medium. The mask foil is thermally prestressed by the frame at the temperature of use. For this purpose, the material of the frame has a higher coefficient of thermal expansion than the material of the mask foil. A method of manufacturing such masks includes the step wherein the mask foil is mounted in the frame at a temperature which lies below the temperature of use.

    Abstract translation: 用于用成像介质处理底物的掩模。 掩模箔在使用温度下由框架预热。 为此,框架的材料具有比掩模箔的材料更高的热膨胀系数。 制造这种掩模的方法包括以下步骤:其中掩模箔以低于使用温度的温度安装在框架中。

    Charged-particle multi-beam exposure apparatus
    13.
    发明授权
    Charged-particle multi-beam exposure apparatus 有权
    带电粒子多光束曝光装置

    公开(公告)号:US07214951B2

    公开(公告)日:2007-05-08

    申请号:US10969493

    申请日:2004-10-20

    CPC classification number: H01J37/3174 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

    Abstract translation: 用于曝光目标(41)的带电粒子多光束曝光装置(1)使用沿平行光束路径朝向目标(41)传播的多个带电粒子束。 对于每个粒子束,提供照明系统(10),图案定义装置(20)和投影光学系统(30)。 照明系统(10)和/或投影光学系统(30)包括具有多于一个粒子束共有的透镜元件(L 1,L 2,L 3,L 4,L 5)的粒子 - 光学透镜。 图案定义装置(20)在相应的粒子束中限定多个子束,通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标(41)上的期望图案 子束穿透所述孔,并且还包括消隐装置,以切断所选子束从子束的相应路径的通过。

    Ion-projection lithographic apparatus with means for aligning the mask
image with the substrate
    15.
    发明授权
    Ion-projection lithographic apparatus with means for aligning the mask image with the substrate 失效
    离子投影光刻设备,具有用于将掩模图像与基底对准的装置

    公开(公告)号:US4823011A

    公开(公告)日:1989-04-18

    申请号:US50978

    申请日:1987-05-15

    CPC classification number: H01J37/3045

    Abstract: An apparatus and method for the fine alignment of a mask with a substrate in ion-projection lithography, e.g. for the production of integrated circuit chips, utilizes a multipole, an axial magnetic field generator and a scale controlling projection lens in the path of the beam. The mask is provided with markings which are imaged on the substrate and brought into registry with corresponding markings thereon utilizing pairs of detectors associated with each linear marking and responsive to secondary emission of the ion-beam marking projected on the substrate. All of the markings are straight lines.

    Abstract translation: 用于在离子投影光刻中掩模与衬底精细对准的装置和方法,例如, 为了生产集成电路芯片,在光束的路径中利用多极,轴向磁场发生器和刻度控制投影透镜。 掩模具有标记,其被成像在基板上,并使用与每个线性标记相关联的检测器对并且响应于投影在基板上的离子束标记的二次发射而与其中的相应标记对准。 所有的标记都是直线。

    Particle-optical system
    16.
    发明授权
    Particle-optical system 有权
    粒子光学系统

    公开(公告)号:US08368015B2

    公开(公告)日:2013-02-05

    申请号:US11990067

    申请日:2006-08-08

    CPC classification number: H01J37/12 B82Y10/00 B82Y40/00 H01J37/3177

    Abstract: The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture.

    Abstract translation: 多子束多列粒子光学系统技术领域本发明涉及一种多子束多列粒子光学系统,该多子束多列粒子光学系统包括多个列,其被布置成阵列以同时暴露衬底,每个列具有光轴,并且包括:子束产生装置,其包括至少一个 用于产生多个带电粒子束的图案的多孔板,以及包括至少一个电极元件的静电透镜装置; 所述至少一个电极元件具有由面向光轴的内周边缘限定的孔,所述孔在与所述光轴正交的平面中具有中心和预定形状; 其中在所述多个列中的至少一个列中,所述孔的预定形状是非圆形形状,其具有围绕所述孔的中心的来自理想圆的突起和凹陷中的至少一个。

    Compensation of magnetic fields
    17.
    发明授权
    Compensation of magnetic fields 有权
    磁场补偿

    公开(公告)号:US07436120B2

    公开(公告)日:2008-10-14

    申请号:US11070439

    申请日:2005-03-02

    CPC classification number: G05F7/00

    Abstract: For compensation of a magnetic field in an operating region a number of magnetic field sensors (S1, S2) and an arrangement of compensation coils (Hh) surrounding said operating region is used. The magnetic field is measured by at least two sensors (S1, S2) located at different positions outside the operating region, preferably at opposing positions with respect to a symmetry axis of the operating region, generating respective sensor signals (s1, s2), the sensor signals of said sensors are superposed to a feedback signal (ms, fs), which is converted by a controlling means to a driving signal (d1), and the driving signal is used to steer at least one compensation coil (Hh). To further enhance the compensation, the driving signal is also used to derive an additional input signal (cs) for the superposing step to generate the feedback signal (fs).

    Abstract translation: 为了补偿工作区域中的磁场,使用多个磁场传感器(S1,S2)和围绕所述操作区域的补偿线圈(Hh)的布置。 磁场由位于工作区域外部的不同位置的至少两个传感器(S1,S2)测量,优选地在相对于操作区域的对称轴线的相对位置处产生相应的传感器信号(s 1,s 2) 2),所述传感器的传感器信号被叠加到由控制装置转换为驱动信号(d 1)的反馈信号(ms,fs),并且驱动信号用于转向至少一个补偿线圈 (Hh)。 为了进一步增强补偿,驱动信号还用于导出叠加步骤的附加输入信号(cs)以产生反馈信号(fs)。

    Particle-optical projection system
    18.
    发明申请
    Particle-optical projection system 审中-公开
    粒子投影系统

    公开(公告)号:US20050201246A1

    公开(公告)日:2005-09-15

    申请号:US11080578

    申请日:2005-03-15

    Abstract: In a particle-optical projection system (32) a pattern (B) is imaged onto a target (tp) by means of energetic electrically charged particles. The pattern is represented in a patterned beam (pb) of said charged particles emerging from the object plane through at least one cross-over (c); it is imaged into an image (S) with a given size and distortion. To compensate for the Z-deviation of the image (S) position from the actual positioning of the target (tp) (Z denotes an axial coordinate substantially parallel to the optical axis cx), without changing the size of the image (S), the system comprises a position detection means (ZD) for measuring the Z-position of several locations of the target (tp), a control means (33) for calculating modifications (cr) of selected lens parameters of the final particle-optical lens (L2) and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统(32)中,通过能量带电粒子将图案(B)成像到目标(tp)上。 所述图案通过至少一个交叉(c)从所述物体平面出射的所述带电粒子的图案化束(pb)中表示; 它被成像为具有给定大小和失真的图像(S)。 为了补偿图像(S)位置与目标的实际定位(tp)(Z表示基本上平行于光轴cx的轴向坐标)的Z偏差,而不改变图像(S)的尺寸, 该系统包括用于测量目标(tp)的若干位置的Z位置的位置检测装置(ZD),用于计算最终粒子光学透镜的选定透镜参数的修改(cr)的控制装置(33) L 2),并根据所述修改来控制所述透镜参数。

    Particle-optic electrostatic lens
    19.
    发明申请
    Particle-optic electrostatic lens 有权
    粒子静电透镜

    公开(公告)号:US20050072933A1

    公开(公告)日:2005-04-07

    申请号:US10951087

    申请日:2004-09-27

    Abstract: In a charged-particle beam exposure device, an electrostatic lens (ML) comprises several (at least three) electrodes with rotational symmetry (EFR, EM, EFN) surrounding a particle beam path; the electrodes are arranged coaxially on a common optical axis representing the center of said particle beam path and are fed different electrostatic potentials through electric supplies. At least a subset of the electrodes (EM) form an electrode column realized as a series of electrodes of substantially equal shape arranged in consecutive order along the optical axis, wherein outer portions of said electrodes (EM) of the electrode column have outer portions (OR) of corresponding opposing surfaces (f1, f2) facing toward the next and previous electrodes, respectively. Preferably, the length of the electrode column is at least 4.1 times (3 times) the inner radius (ri1) of said surfaces (f1, f2).

    Abstract translation: 在带电粒子束曝光装置中,静电透镜(ML)包括围绕粒子束路径的旋转对称(EFR,EM,EFN)的几个(至少三个)电极; 电极同轴地布置在表示所述粒子束路径的中心的公共光轴上,并且通过电源馈送不同的静电电位。 电极(EM)的至少一个子集形成电极柱,其实现为沿着光轴以连续顺序布置的基本相等形状的一系列电极,其中电极柱的所述电极(EM)的外部部分具有外部部分 OR)分别面向下一个和前一个电极的对应的相对表面(f1,f2)。 优选地,电极柱的长度为所述表面(f1,f2)的内半径(ri1)的至少4.1倍(3倍)。

    Ion beam lithography
    20.
    发明授权
    Ion beam lithography 失效
    离子束光刻

    公开(公告)号:US4985634A

    公开(公告)日:1991-01-15

    申请号:US226275

    申请日:1988-07-29

    Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

    Abstract translation: 描述了用于投影离子束光刻的装置和方法,其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真,大场,缩小图像。 所示的列包括加速的Einzel透镜,随后是间隙透镜,具有许多合作特征。 通过协调选择光学柱的参数,同时最小化透镜失真和色彩模糊。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量,并且提供了将新场与现有图案相匹配的装置,即使后者具有 被处理扭曲了。 计量系统使仪器方便校准和调整。

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