Humidity Sensor
    13.
    发明申请
    Humidity Sensor 审中-公开
    湿度传感器

    公开(公告)号:US20160202201A1

    公开(公告)日:2016-07-14

    申请号:US14991096

    申请日:2016-01-08

    CPC classification number: G01N27/223 G01N27/414

    Abstract: A humidity sensor having a sensing component and a reference component. Each component may indicate humidity by using a transistor that has an upper gate dielectric layer with a dielectric constant which varies according to exposure to a change of moisture. The sensing component may have its upper gate dielectric layer exposed to an ambient environment. The reference component may have its upper gate dielectric layer with an absence of exposure to any environment. Sensing and reference transistor outputs may be processed with differential electronics to provide an output to indicate humidity in the ambient environment. Differential processing may reflect an output having a high common mode rejection ratio. An example of an upper gate dielectric layer deposited over a thin gate dielectric layer may be a hydrophobic polymer material. Other materials may instead be used. The components and processing electronics may be transistor circuits fabricated with integrated circuit technology.

    Abstract translation: 一种具有感测部件和基准部件的湿度传感器。 每个组件可以通过使用具有介电常数的上栅极电介质层的晶体管来指示湿度,所述介电常数随暴露于湿度变化而变化。 感测组件可能具有暴露于周围环境的其上栅极电介质层。 该参考部件可以具有不存在暴露于任何环境的上栅极电介质层。 传感和参考晶体管输出可以用差分电子器件处理,以提供输出以指示环境中的湿度。 差分处理可以反映具有高共模抑制比的输出。 沉积在薄栅介质层上的上栅极电介质层的实例可以是疏水性聚合物材料。 可以替代地使用其他材料。 组件和处理电子器件可以是用集成电路技术制造的晶体管电路。

    Method and system for diamond-based oxygen sensor
    19.
    发明授权
    Method and system for diamond-based oxygen sensor 有权
    基于金刚石氧传感器的方法和系统

    公开(公告)号:US09349801B2

    公开(公告)日:2016-05-24

    申请号:US14828718

    申请日:2015-08-18

    CPC classification number: G01N27/4141 C30B29/04 H01L29/1602 H01L29/45

    Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

    Abstract translation: 基于钻石的氧传感器能够在恶劣的环境条件下起作用。 氧传感器包括一个无盖场效应晶体管,其包括显示出二维空穴效应的合成的,本征的,氢钝化的单晶金刚石层。 氧传感器还包括感测层,其包含沉积在无平台场效应晶体管的表面上的钇稳定的氧化锆。

    METHOD AND SYSTEM FOR DIAMOND-BASED OXYGEN SENSOR
    20.
    发明申请
    METHOD AND SYSTEM FOR DIAMOND-BASED OXYGEN SENSOR 有权
    基于金刚石氧化物传感器的方法和系统

    公开(公告)号:US20160056239A1

    公开(公告)日:2016-02-25

    申请号:US14828718

    申请日:2015-08-18

    CPC classification number: G01N27/4141 C30B29/04 H01L29/1602 H01L29/45

    Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

    Abstract translation: 基于钻石的氧传感器能够在恶劣的环境条件下起作用。 氧传感器包括一个无盖场效应晶体管,其包括显示出二维空穴效应的合成的,本征的,氢钝化的单晶金刚石层。 氧传感器还包括感测层,其包含沉积在无平台场效应晶体管的表面上的钇稳定的氧化锆。

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