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公开(公告)号：US20230268444A1
公开(公告)日：2023-08-24
申请号：US17922034
申请日：2021-11-02
发明人： Guangcai YUAN , Linfeng LAN , Fengjuan LIU , Ce NING , Hehe HU , Fei WANG , Junbiao PENG
IPC分类号： H01L29/786 , H01L29/24 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66969
摘要： A metal oxide semiconductor material includes a semiconductor base material and at least one kind of rare earth compound doped in the semiconductor base material, Each kind of rare earth compound has a general formula represented as (MFD)aAb, where in s the general formula (MFD)aAb, MFD is an element selected from rare earth elements capable of undergoing f-d transition and/or charge transfer transition, A is selected from elements capable of stretching a wavelength range of an absorption spectrum of MFD capable of undergoing the f-d transition and/or the charge transfer transition towards red light into a visible light range, a is a number of the element MFD in the general formula (MFD)aAb, and b is a number of the element A in the general formula (MFD)aAb.
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12.发明申请公开(公告)号：US20230110228A1
公开(公告)日：2023-04-13
申请号：US17905246
申请日：2020-03-19
发明人： Dapeng XUE , Zheng LIU , Hehe HU , Lizhong WANG , Shuilang DONG , Nianqi YAO
IPC分类号： H01L29/66 , H01L29/786 , H01L29/45 , H01L29/40
摘要： Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.
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13.发明申请公开(公告)号：US20200220020A1
公开(公告)日：2020-07-09
申请号：US16608549
申请日：2019-04-25
发明人： Wenlin ZHANG , Jianming SUN , Hehe HU
IPC分类号： H01L29/786 , H01L27/12
摘要： The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.
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14.发明申请公开(公告)号：US20190233299A1
公开(公告)日：2019-08-01
申请号：US16344000
申请日：2018-09-17
发明人： Wenlin ZHANG , Ce NING , Hehe HU , Zhengliang LI
IPC分类号： C01G15/00 , H01L29/786
CPC分类号： C01G15/006 , C01P2002/72 , C01P2004/61 , H01L29/7869
摘要： An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.
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公开(公告)号：US20150370168A1
公开(公告)日：2015-12-24
申请号：US14428143
申请日：2014-08-15
发明人： Jianguo WANG , Hehe HU
CPC分类号： G03F7/0757 , G03F7/0382 , G03F7/0755 , G03F7/16 , G03F7/20 , G03F7/32
摘要： Disclosed is a negative photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, 0.1 to 15 parts by weigh of a crosslinking agent, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the negative photoresist.
摘要翻译： 公开了含有含羟基或含羧基的成膜树脂1〜90份，含硅乙烯基醚单体1〜99份，交联剂0.1〜15重量份和有机溶剂 能够溶解上述物质。 还公开了制备和使用负性光致抗蚀剂的方法。
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16.发明公开公开(公告)号：US20240355978A1
公开(公告)日：2024-10-24
申请号：US18254210
申请日：2022-04-21
发明人： Nianqi YAO , Zhongpeng TIAN , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Jiayu HE , Feifei LI , Kun ZHAO , Yimin CHEN
IPC分类号： H01L33/62 , G02F1/13357 , H05K3/46
CPC分类号： H01L33/62 , G02F1/133603 , H05K3/4688
摘要： A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.
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公开(公告)号：US20240329478A1
公开(公告)日：2024-10-03
申请号：US18638710
申请日：2024-04-18
发明人： Guangcai YUAN , Hehe HU , Ce NING , Hui GUO , Fengjuan LIU , Dongfang WANG , Zhengliang LI , Jiayu HE
IPC分类号： G02F1/1368 , G02F1/1362 , H01L27/12
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136295 , H01L27/124 , H01L27/1255 , H01L27/1259
摘要： An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.
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公开(公告)号：US20240244747A1
公开(公告)日：2024-07-18
申请号：US17927576
申请日：2021-12-31
发明人： Nianqi YAO , Feifei LI , Ce NING , Zhengliang LI , Hehe HU , Jiayu HE , Jie HUANG , Kun ZHAO , Zhanfeng CAO , Ke WANG
IPC分类号： H05K1/11 , H01L23/498 , H01L33/62 , H05K1/09 , H05K1/18
CPC分类号： H05K1/111 , H01L23/49838 , H01L33/62 , H05K1/09 , H05K1/181 , H05K2201/0338 , H05K2201/10106 , H05K2201/10151
摘要： A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.
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19.发明公开公开(公告)号：US20240194686A1
公开(公告)日：2024-06-13
申请号：US17908652
申请日：2021-10-25
发明人： Nianqi YAO , Ce NING , Zhengliang LI , Hehe HU , Shuilang DONG , Lizhong WANG , Dapeng XUE , Jiayu HE , Jie HUANG , Lubin SHI , Liping LEI
IPC分类号： H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1225 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： Provided is a thin film transistor and a method for manufacturing thereof, a display panel, and a display device, which relates to the field of display technologies. The thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. As an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, oxygen introduced in forming the oxygen supplementation layer in the thin film transistor is capable of diffusing to the target portion of the active layer, such that a defect in the target portion of the active layer is reduced, and a property of the thin film transistor is greater.
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公开(公告)号：US20240186330A1
公开(公告)日：2024-06-06
申请号：US17786177
申请日：2021-08-26
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI , Qi QI
IPC分类号： H01L27/12
CPC分类号： H01L27/124
摘要： Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.
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