-
公开(公告)号：US10087520B2
公开(公告)日：2018-10-02
申请号：US15627952
申请日：2017-06-20
Applicant: Axcelis Technologies, Inc.
Inventor： Dennis Elliott Kamenitsa , Richard J. Rzeszut , Fernando M. Silva , Neil K. Colvin
IPC: C23C16/12 , C01B7/13 , C01B31/36 , C01F7/48 , C23C16/448 , H01L21/02 , H01L21/306 , C23C14/48 , H01J37/317 , H01L21/265
Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.
-
公开(公告)号：US20170287579A1
公开(公告)日：2017-10-05
申请号：US15477680
申请日：2017-04-03
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Tseh-Jen Hsieh , Paul B. Silverstein
IPC: G21F1/06 , H01J27/08 , H01J37/317
CPC classification number: H01J37/32431 , G21F1/06 , H01J9/32 , H01J11/28 , H01J27/08 , H01J37/08 , H01J37/3171 , H01J37/32541 , H01J37/32559 , H01J2237/0213 , H01J2237/022 , H01J2237/03 , H01J2237/31701
Abstract: An arc chamber has a liner operably coupled to body. The liner has a second surface recessed from a first surface and a hole having a first diameter. The liner has a liner lip extending upwardly from the second surface toward the first surface that surrounds the hole and has a second diameter. An electrode has a shaft and head. The shaft has a third diameter that is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a fourth diameter and a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter that is between the second and fourth diameters. A spacing between the liner lip and electrode lip defines a labyrinth seal and generally prevents contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.
-
公开(公告)号：US20170207057A1
公开(公告)日：2017-07-20
申请号：US15410707
申请日：2017-01-19
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Tseh-Jen Hsieh , Paul B. Silverstein
IPC: H01J37/04 , H01J37/317
CPC classification number: H01J37/045 , H01J37/04 , H01J37/05 , H01J37/08 , H01J37/09 , H01J37/12 , H01J37/147 , H01J37/3171 , H01J2237/083
Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system. The aperture fastener may be a screw and a bevel washer. The first aperture member may be operably coupled to a base plate via an aperture assembly fastener.
-
公开(公告)号：US20170207054A1
公开(公告)日：2017-07-20
申请号：US15410711
申请日：2017-01-19
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Tseh-Jen Hsieh , Paul b. Silverstein
CPC classification number: H01J17/06 , H01J17/186 , H01J27/022 , H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/061
Abstract: An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. The axial hole is configured to pass the electrode therethrough. First and second ends of the body have respective first and second gas conductance limiters. The first gas conductance limiter extends from an outer diameter of the body and has a U-shaped lip. The second gas conductance limiter has a recess for a seal to protect the seal from corrosive gases and maintain an integrity of the seal. A gas source introduces a gas to the arc chamber body. A liner has an opening configured to pass the cathode shield therethrough, where the liner has a recess. A gap is defined between the U-shaped lip and the liner, wherein the U-shaped lip reduces a conductance of gas into the gap and the recess further reduces conductance of gas into the region.
-
公开(公告)号：US11699565B2
公开(公告)日：2023-07-11
申请号：US17514302
申请日：2021-10-29
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Edward Moore
IPC: H01J37/08 , H01J37/317
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/05
Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
-
Patent Agency Ranking
公开(公告)号：US11699563B2
公开(公告)日：2023-07-11
申请号：US17339085
申请日：2021-06-04
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Xiao Xu
CPC classification number: H01J27/22 , H01J37/08 , H01J2237/08 , H01J2237/31701
Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.
-
公开(公告)号：US09941087B2
公开(公告)日：2018-04-10
申请号：US15410711
申请日：2017-01-19
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Tseh-Jen Hsieh , Paul b. Silverstein
CPC classification number: H01J17/06 , H01J17/186 , H01J27/022 , H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/061
Abstract: An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. The axial hole is configured to pass the electrode therethrough. First and second ends of the body have respective first and second gas conductance limiters. The first gas conductance limiter extends from an outer diameter of the body and has a U-shaped lip. The second gas conductance limiter has a recess for a seal to protect the seal from corrosive gases and maintain an integrity of the seal. A gas source introduces a gas to the arc chamber body. A liner has an opening configured to pass the cathode shield therethrough, where the liner has a recess. A gap is defined between the U-shaped lip and the liner, wherein the U-shaped lip reduces a conductance of gas into the gap and the recess further reduces conductance of gas into the region.
-
公开(公告)号：US20230135525A1
公开(公告)日：2023-05-04
申请号：US17976055
申请日：2022-10-28
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Joshua Abeshaus
IPC: H01J37/32
Abstract: An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.
-
公开(公告)号：US20220139662A1
公开(公告)日：2022-05-05
申请号：US17339085
申请日：2021-06-04
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Xiao Xu
Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.
-
公开(公告)号：US20220013323A1
公开(公告)日：2022-01-13
申请号：US17339025
申请日：2021-06-04
Applicant: Axcelis Technologies, Inc.
Inventor： Neil K. Colvin , Neil Bassom , Xiangyang Wu
IPC: H01J37/08 , H01J37/317
Abstract: An ion implantation system has an aluminum trichloride source material. An ion source is configured to ionize the aluminum trichloride source material and form an ion beam. The ionization of the aluminum trichloride source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus is configured to introduce a reducing agent including hydrogen to the ion source. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly is configured to selectively transport the ion beam, and an end station is configured to accept the ion beam for implantation of ions into a workpiece.
-
-
-
-
-
-
-
-
-
Search Results
23
records
(took 0.017 seconds)
