An ion implantation system has an aluminum trichloride source material. An ion source is configured to ionize the aluminum trichloride source material and form an ion beam. The ionization of the aluminum trichloride source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus is configured to introduce a reducing agent including hydrogen to the ion source. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly is configured to selectively transport the ion beam, and an end station is configured to accept the ion beam for implantation of ions into a workpiece.