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11.发明授权公开(公告)号：US11774862B2
公开(公告)日：2023-10-03
申请号：US17501911
申请日：2021-10-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Masashi Ishibashi , Wendy Johanna Martina Van De Ven , Willem Seine Christian Roelofs , Elliott Gerard McNamara , Rizvi Rahman , Michiel Kupers , Emil Peter Schmitt-Weaver , Erik Henri Adriaan Delvigne
IPC: G03F7/20 , G03F7/00 , G01N21/956 , G03F9/00 , H01L21/66
CPC classification number: G03F7/70633 , G01N21/956 , G03F9/7046 , H01L22/12 , H01L22/20
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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公开(公告)号：US11714357B2
公开(公告)日：2023-08-01
申请号：US17363057
申请日：2021-06-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander Ypma , Cyrus Emil Tabery , Simon Hendrik Celine Van Gorp , Chenxi Lin , Dag Sonntag , Hakki Ergün Cekli , Ruben Alvarez Sanchez , Shih-Chin Liu , Simon Philip Spencer Hastings , Boris Menchtchikov , Christiaan Theodoor De Ruiter , Peter Ten Berge , Michael James Lercel , Wei Duan , Pierre-Yves Jerome Yvan Guittet
CPC classification number: G03F7/70491 , G03F7/705 , G03F7/70658
Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
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13.发明授权公开(公告)号：US11175591B2
公开(公告)日：2021-11-16
申请号：US16098165
申请日：2017-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Masashi Ishibashi , Wendy Johanna Martina Van De Ven , Willem Seine Christian Roelofs , Elliott Gerard McNamara , Rizvi Rahman , Michiel Kupers , Emil Peter Schmitt-Weaver , Erik Henri Adriaan Delvigne
IPC: G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US12045555B2
公开(公告)日：2024-07-23
申请号：US16960376
申请日：2019-01-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Vahid Bastani , Alexander Ypma , Dag Sonntag , Everhardus Cornelis Mos , Hakki Ergün Cekli , Chenxi Lin
IPC: G06F30/30 , G06F30/398 , G06N5/01 , G06N5/04 , G06N20/20 , G06F119/18
CPC classification number: G06F30/398 , G06N5/01 , G06N5/04 , G06N20/20 , G06F2119/18
Abstract: Substrates to be processed are partitioned based on pre-processing data that is associated with substrates before a process step. The data is partitioned using a partition rule and the substrates are partitioned into subsets in accordance with subsets of the data obtained by the partitioning. Corrections are applied, specific to each subset. The partition rule is obtained using decision tree analysis on a training set of substrates. The decision tree analysis uses pre-processing data associated with the training substrates before they were processed, and post-processing data associated with the training substrates after being subject to the process step. The partition rule that defines the decision tree is selected from a plurality of partition rules based on a characteristic of subsets of the post-processing data. The associated corrections are obtained implicitly at the same time.
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Patent Agency Ranking
公开(公告)号：US11442366B2
公开(公告)日：2022-09-13
申请号：US16620899
申请日：2018-05-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Rizvi Rahman , Hakki Ergün Cekli , Cëdric Dësirë Grouwstra
IPC: G05B19/418 , H01L21/66 , G03F7/20
Abstract: A device manufacturing method, the method including: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.
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公开(公告)号：US11099485B2
公开(公告)日：2021-08-24
申请号：US16493326
申请日：2018-04-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander Ypma , Vahid Bastani , Dag Sonntag , Jelle Nije , Hakki Ergün Cekli , Georgios Tsirogiannis , Robert Jan Van Wijk
Abstract: A method of maintaining a set of fingerprints representing variation of one or more process parameters across wafers subjected to a device manufacturing method, the method including: receiving measurement data of one or more parameters measured on wafers; updating the set of fingerprints based on an expected evolution of the one or more process parameters; and evaluation of the updated set of fingerprints based on decomposition of the received measurement data in terms of the updated set of fingerprints. Each fingerprint may have a stored likelihood of occurrence, and the decomposition may involve: estimating, based the received measurement data, likelihoods of occurrence of the set of fingerprints in the received measurement data; and updating the stored likelihoods of occurrence based on the estimated likelihoods.
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公开(公告)号：US20200150547A1
公开(公告)日：2020-05-14
申请号：US16744269
申请日：2020-01-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Ralph Timotheus HUIJGEN , Marc Jurian Kea , Marcel Theodorus Maria Van Kessel , Masashi Ishibashi , Chi-Hsiang Fan , Hakki Ergün Cekli , Youping Zhang , Maurits Van Der Schaar , Liping Ren
IPC: G03F7/20 , G03F9/00 , G01N21/956
Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.
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公开(公告)号：US10025193B2
公开(公告)日：2018-07-17
申请号：US15109784
申请日：2014-10-23
Applicant: ASML Netherlands B.V.
Inventor： Hakki Ergün Cekli , Xing Lan Liu , Daan Maurits Slotboom , Wim Tjibbo Tel , Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren
Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.
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公开(公告)号：US09879988B2
公开(公告)日：2018-01-30
申请号：US15013340
申请日：2016-02-02
Applicant: ASML Netherlands B.V.
Inventor： Xing Lan Liu , Hendrik Jan Hidde Smilde , Yue-Lin Peng , Hakki Ergün Cekli , Josselin Pello , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/272 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7007
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.
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