公开(公告)号：USD1031676S1

公开(公告)日：2024-06-18

申请号：US29760951

申请日：2020-12-04

申请人： ASM IP HOLDING B.V.

设计人： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

摘要： FIG. 1 is a front perspective view of a combined susceptor, support, and lift system;
FIG. 2 is a back perspective view thereof;
FIG. 3 is a side view thereof;
FIG. 4 is a cross-sectional view taken along line 4-4 as indicated in FIG. 3;
FIG. 5 is an enlarged view of FIG. 4 shown without broken line environmental subject matter for clarity of the claimed subject matter;
FIG. 6 is a top perspective view of the lift pin thereof;
FIG. 7 is a bottom perspective view of the lift pin thereof;
FIG. 8 is a front view of the lift pin thereof;
FIG. 9 is a back view of the lift pin thereof;
FIG. 10 is a left view of the lift pin thereof;
FIG. 11 is a right view of the lift pin thereof;
FIG. 12 is a top view of the lift pin thereof; and,
FIG. 13 is a bottom view of the lift pin thereof.
The dash-dash broken lines within the shaded area and the dash-dash broken lines in FIGS. 1-13 depicting various components of the susceptor, support, and lift system are for the purpose of illustrating environmental subject matter and portions of the article that form no part of the claimed design. The dot-dash broken line in FIG. 3 is for the purpose of defining the cross-sectional view shown in FIG. 4.

公开(公告)号：US20240175130A1

公开(公告)日：2024-05-30

申请号：US18523021

申请日：2023-11-29

申请人： ASM IP Holding B.V.

发明人： Hichem M’Saad ,  Ivo Johannes Raaijmakers ,  Xing Lin ,  Wentao Wang ,  Herbert Terhorst

IPC分类号： C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  H01L21/677

CPC分类号： C23C16/45546 ,  C23C16/4412 ,  C23C16/45553 ,  C23C16/45565 ,  H01L21/67098 ,  H01L21/67201 ,  H01L21/67248 ,  H01L21/67742

摘要： Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.

公开(公告)号：US20240112946A1

公开(公告)日：2024-04-04

申请号：US18476067

申请日：2023-09-27

申请人： ASM IP Holding, B.V.

发明人： Bradley Wayne Evans ,  Shujin Huang ,  Junwei Su ,  Loc Tran ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/687 ,  C23C16/458

CPC分类号： H01L21/68742 ,  C23C16/4585

摘要： A lift pin actuator includes a castellated annulus, a first arm, a second arm, and a pin pad. The annulus arranged along a rotation axis and has a first merlon and a second merlon circumferentially separated by a crenel. The first arm is connected to the first merlon and extends outward from the annulus, the second arm is connected to the second merlon and extends outward from the annulus, and the second arm is circumferentially spaced from the first arm by a radial gap. The pin pad is connected to the annulus by the first arm and the second arm, is radially spaced from the annulus by the radial gap, and radially overlaps the crenel to nest a support member within the lift pin actuator during translation of the lift pin actuator along the rotation axis relative to the support member. Process kits, semiconductor processing systems, methods of making lift pin actuators and related material layer deposition methods are also described.

公开(公告)号：US20230203706A1

公开(公告)日：2023-06-29

申请号：US18086734

申请日：2022-12-22

申请人： ASM IP Holding B.V.

发明人： Alexandros Demos ,  Hichem M'Saad ,  Xing Lin ,  Caleb Miskin ,  Shivaji Peddeti ,  Amir Kajbafvala

IPC分类号： C30B25/14 ,  C30B25/12 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08

CPC分类号： C30B25/14 ,  C30B25/12 ,  C30B25/165 ,  C30B25/186 ,  C30B29/06 ,  C30B29/08

摘要： A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

公开(公告)号：US20230128390A1

公开(公告)日：2023-04-27

申请号：US18048099

申请日：2022-10-20

申请人： ASM IP Holding, B.V.

发明人： Shujin Huang ,  Junweli Su ,  Wentao Wang ,  Zhizhong Chen ,  Xing Lin ,  Jiwen Xiang

IPC分类号： H01L21/687

摘要： A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

公开(公告)号：US20220189804A1

公开(公告)日：2022-06-16

申请号：US17549311

申请日：2021-12-13

申请人： ASM IP Holding B.V.

发明人： Siyao Luan ,  Peipei Gao ,  Xing Lin ,  Alexandros Demos ,  Kishor Patil

IPC分类号： H01L21/67 ,  C23C16/458 ,  C23C16/455

摘要： A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/40

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：USD1030687S1

公开(公告)日：2024-06-11

申请号：US29840698

申请日：2022-05-31

申请人： ASM IP Holding B.V.

设计人： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

摘要： FIG. 1 is a front perspective view of a susceptor, showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is right side view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is front view thereof;
FIG. 6 is back view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.

公开(公告)号：USD1028913S1

公开(公告)日：2024-05-28

申请号：US29797476

申请日：2021-06-30

申请人： ASM IP HOLDING B.V.

设计人： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

摘要： FIG. 1 is a top perspective view of a semiconductor deposition reactor ring;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a right view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The broken lines in the drawings illustrate portions of the semiconductor deposition reactor ring that form no part of the claimed design.

公开(公告)号：US20230386874A1

公开(公告)日：2023-11-30

申请号：US18324411

申请日：2023-05-26

申请人： ASM IP Holding, B.V.

发明人： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

IPC分类号： H01L21/673 ,  H01L21/687 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L21/67316 ,  H01L21/68742 ,  H01L21/02293 ,  H01L21/3213

摘要： A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.