公开(公告)号：US20190224723A1

公开(公告)日：2019-07-25

申请号：US15879677

申请日：2018-01-25

Applicant: Applied Materials, Inc.

Inventor： Roman M. MOSTOVOY ,  Suketu Arun PARIKH ,  Todd EGAN

IPC: B08B7/00 ,  B08B5/04 ,  B08B15/04 ,  G01N15/06 ,  H01L21/02

Abstract: Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

公开(公告)号：US20170016118A1

公开(公告)日：2017-01-19

申请号：US15278455

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  C23C16/46 ,  H01L21/687 ,  C23C16/458 ,  G01B11/06 ,  H01L21/67 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US20230266247A1

公开(公告)日：2023-08-24

申请号：US18129503

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Avishek GHOSH ,  Byung-Sung KWAK ,  Todd EGAN ,  Robert Jan VISSER ,  Gangadhar BANAPPANAVAR ,  Dinesh KABRA

IPC: G01N21/64 ,  H10K50/10

CPC classification number: G01N21/6489 ,  G01N21/6408 ,  H10K50/182

Abstract: An apparatus for determining a characteristic of a photoluminescent (PL) layer comprises: a light source that generates an excitation light that includes light from the visible or near-visible spectrum; an optical assembly configured to direct the excitation light onto a PL layer; a detector that is configured to receive a PL emission generated by the PL layer in response to the excitation light interacting with the PL layer and generate a signal based on the PL emission; and a computing device coupled to the detector and configured to receive the signal from the detector and determine a characteristic of the PL layer based on the signal.

公开(公告)号：US20230060205A1

公开(公告)日：2023-03-02

申请号：US17888277

申请日：2022-08-15

Applicant: Applied Materials, Inc.

Inventor： Mehdi VAEZ-IRAVANI ,  Todd EGAN ,  Guoheng ZHAO

IPC: G01N15/02 ,  G01N15/14

Abstract: Examples disclosed herein generally relate to systems and methods for detecting the size of a particle in a fluid. In one example, a system for imaging a particle includes a first imaging device. The first imaging device includes a lens and a digital detector. The system further includes a laser source. He laser source is configured to emit a first laser beam and a second laser beam. The digital detector is configured to accumulate a metric of an intensity of an accumulated light that passes through the lens. The accumulated light is scattered from the particle. The accumulated light includes light from the first laser beam and the second laser beam.

公开(公告)号：US20180258535A1

公开(公告)日：2018-09-13

申请号：US15976468

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  C23C16/509 ,  C23C16/455 ,  C23C16/505 ,  C23C16/50 ,  C23C16/46 ,  C23C16/458 ,  G01N21/65 ,  G01N21/55 ,  H01L21/67 ,  H01L21/00

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20180057935A1

公开(公告)日：2018-03-01

申请号：US15684677

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Edward BUDIARTO ,  Beom Soo PARK ,  Soo Young CHOI ,  Fei PENG ,  Todd EGAN

IPC: C23C16/44 ,  B08B9/08 ,  B08B7/00 ,  B08B9/46 ,  G01N21/94 ,  H01J37/32

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  B08B9/0865 ,  B08B9/46 ,  C23C16/52 ,  G01N21/94 ,  H01J37/32853

Abstract: Embodiments of the present invention provide an apparatus and methods for detecting an endpoint for a cleaning process. In one example, a method of determining a cleaning endpoint includes performing a cleaning process in a plasma processing chamber, directing an optical signal to a surface of a shadow frame during the cleaning process, collecting a return reflected optical signal reflected from the surface of the shadow frame, determining a change of reflectance intensity of the return reflected optical signal as collected, and determining an endpoint of the cleaning process based on the change of the reflected intensity. In another example, an apparatus for performing a plasma process and a cleaning process after the plasma process includes an optical monitoring system coupled to a processing chamber, the optical monitoring system configured to direct an optical beam light to a surface of a shadow frame disposed in the processing chamber.

公开(公告)号：US20160370173A1

公开(公告)日：2016-12-22

申请号：US15184276

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Khokan C. PAUL ,  Edward BUDIARTO ,  Todd EGAN ,  Mehdi VAEZ-IRAVANI ,  Jeongmin LEE ,  Dale R. DU BOIS ,  Terrance Y. LEE

IPC: G01B11/06 ,  C23C16/509 ,  G01B7/06 ,  C23C16/52 ,  H01L21/66 ,  H01L21/67

CPC classification number: G01B11/0616 ,  C23C16/509 ,  C23C16/52 ,  G01B7/085 ,  H01J37/32082 ,  H01J37/32935 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/30

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

Abstract translation: 本公开的实施例涉及用于形成在基板上具有均匀厚度的膜的装置和方法。 本公开的实施例可以用于测量沉积在基板上的膜的厚度或其它性质，而不事先知道基板的表面性质。 本公开的实施例可以用于测量正在形成的多个层的厚度或其他性质。 例如，本公开的实施例可以用于测量垂直存储器堆叠的厚度。

公开(公告)号：US20210208077A1

公开(公告)日：2021-07-08

申请号：US17188485

申请日：2021-03-01

Applicant: Applied Materials, Inc.

Inventor： Avishek GHOSH ,  Byung-Sung KWAK ,  Todd EGAN ,  Robert Jan VISSER ,  Gangadhar BANAPPANAVAR ,  Dinesh KABRA

IPC: G01N21/64 ,  H01L51/52

Abstract: An apparatus for determining a characteristic of a photoluminescent (PL) layer comprises: a light source that generates an excitation light that includes light from the visible or near-visible spectrum; an optical assembly configured to direct the excitation light onto a PL layer; a detector that is configured to receive a PL emission generated by the PL layer in response to the excitation light interacting with the PL layer and generate a signal based on the PL emission; and a computing device coupled to the detector and configured to receive the signal from the detector and determine a characteristic of the PL layer based on the signal.

公开(公告)号：US20190212128A1

公开(公告)日：2019-07-11

申请号：US16356317

申请日：2019-03-18

Applicant: Applied Materials, Inc.

Inventor： Khokan C. PAUL ,  Edward BUDIARTO ,  Todd EGAN ,  Mehdi VAEZ-IRAVANI ,  Jeongmin LEE ,  Dale R. DU BOIS ,  Terrance Y. LEE

IPC: G01B11/06 ,  H01J37/32 ,  C23C16/52 ,  H01L21/66 ,  C23C16/509 ,  G01B7/06

CPC classification number: G01B11/0616 ,  C23C16/509 ,  C23C16/52 ,  G01B7/085 ,  H01J37/32082 ,  H01J37/32935 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/30

Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

公开(公告)号：US20180066364A1

公开(公告)日：2018-03-08

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  H01L21/687 ,  G01B11/06 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  C23C16/509 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.